Cypress Semiconductor CY7C1019BN Bedienungsanleitung

128K x 8 Static RAM

CY7C1019BN

Cypress Semiconductor Corporation • 198ChampionCourt • San Jose,CA 95134-1709 • 408-943-2600

Document #: 001-06425 Rev. ** Revised February 1, 2006

Features

•Highspeed

—t

AA = 12, 15 ns

• CMOS for optimum speed/power

• Center power/ground pinout

• Automatic power-down when deselected

• Easy memory expansion with CE and OE options

• Functionally equivalent to CY7C1019

Functional Description

The CY7C1019BN is a high-performance CMOS static RAM

organized as 131,072 words by 8 bits. Easy memory

expansion is provided by an active LOW Chip Enable (CE), an

active LOW Output Enable (OE), and three-state drivers. This

device has an automatic power-down feature that significantly

reduces power consumption when deselected.

Writing to the device is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. Data on the eight I/O

pins (I/O0through I/O7) is then written into the location

specified on the address pins (A0through A16).

Reading from the device is accomplished by taking Chip

Enable (CE) and Output Enable (OE) LOW while forcing Write

Enable (WE) HIGH. Under these conditions, the contents of

the memory location specified by the address pins will appear

on the I/O pins.

The eight input/output pins (I/O0through I/O7) are placed in a

high-impedance state when the device is deselected (CE

HIGH), the outputs are disabled (OE HIGH), or during a write

operation (CE LOW, and WE LOW).

The CY7C1019BN is available in standard 32-pin TSOP Type

II and 400-mil-wide SOJ packages.

Logic Block Diagram Pin Configurations

COLUMN

DECODER

ROW DECODER

SENSE AMPS

INPUT BUFFER

POWER

DOWN

I/O0

I/O1

I/O2

I/O3

512 x 256 x 8

ARRAY

I/O7

I/O6

I/O5

I/O4

A11

A13

A12

A10

A16

14 19

Top View

SOJ

15 17

I/O0

I/O1

VCC

A13

A16

A15

I/O7

I/O6

A12

A11

A10

I/O2

I/O4

VCC

I/O5

I/O3

VSS

A14

VSS

/ TSOPII

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CY7C1019BN

Document #: 001-06425 Rev. ** Page 2 of 8

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage on VCC to Relative GND[1] ....–0.5V to +7.0V

DC Voltage Applied to Outputs

in High Z State[1] ....................................–0.5V to VCC + 0.5V

DC Input Voltage[1].................................–0.5V to VCC + 0.5V

Current into Outputs (LOW).........................................20 mA

Static Discharge Voltage............................................>2001V

(per MIL-STD-883, Method 3015)

Latch-Up Current.....................................................>200 mA

Selection Guide

7C1019BN-12 7C1019BN-15 Unit

Maximum Access Time 12 15 ns

Maximum Operating Current 140 130 mA

Maximum Standby Current 10 10 mA

L 1 1 mA

Operating Range

Range Ambient

Temperature[2] VCC

Commercial 0°C to +70°C 5V ±10%

Industrial –40°C to +85°C 5V ±10%

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions

-12 -15

UnitMin. Max. Min. Max.

VOH Output HIGH Voltage VCC =Min., IOH =–4.0 mA 2.4 2.4 V

VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA 0.4 0.4 V

VIH Input HIGH Voltage 2.2 VCC+ 0.3 2.2 VCC+ 0.3 V

VIL Input LOW Voltage[1] –0.3 0.8 –0.3 0.8 V

IIX Input Leakage

Current GND < VI< VCC –1 +1 –1 +1 µA

IOZ Output Leakage

Current GND < VI <VCC,

Output Disabled –5 +5 –5 +5 µA

ICC VCC Operating

Supply Current VCC = Max.,IOUT = 0 mA,

f = fMAX = 1/tRC 140 130 mA

ISB1 Automatic CE

Power-Down Current

—TTL Inputs

Max. VCC, CE > VIH

VIN > VIH or

VIN < VIL, f = fMAX

40 40 mA

L20 20

ISB2 Automatic CE

Power-Down Current

—CMOSInputs

Max. VCC,

CE > VCC – 0.3V,

VIN > VCC – 0.3V,

or VIN < 0.3V, f = 0

10 10 mA

L1 1

Capacitance[3]

Parameter Description Test Conditions Max. Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = 5.0V 6pF

COUT Output Capacitance 8 pF

Notes:

1. VIL (min.) = –2.0V for pulse durations of less than 20 ns.

2. TAis the “Instant On” case temperature.

3. Tested initially and after any design or process changes that may affect these parameters.

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CY7C1019BN

Document #: 001-06425 Rev. ** Page 3 of 8

AC Test Loads and Waveforms

Switching Characteristics[4] Over the Operating Range

Parameter Description

-12 -15

UnitMin. Max. Min. Max.

Read Cycle

tRC Read Cycle Time 12 15 ns

tAA Address to Data Valid 12 15 ns

tOHA Data Hold from Address Change 3 3 ns

tACE CE LOW to Data Valid 12 15 ns

tDOE OE LOW to Data Valid 6 7 ns

tLZOE OE LOW to Low Z 0 0 ns

tHZOE OE HIGH to High Z[5, 6] 67ns

tLZCE CE LOW to Low Z[6] 33 ns

tHZCE CE HIGH to High Z[5, 6] 67ns

tPU CE LOW to Power-Up 0 0 ns

tPD CE HIGH to Power-Down 12 15 ns

Write Cycle[7, 8]

tWC Write Cycle Time 12 15 ns

tSCE CE LOW to Write End 9 10 ns

tAW Address Set-Up to Write End 8 10 ns

tHA Address Hold from Write End 0 0 ns

tSA Address Set-Up to Write Start 0 0 ns

tPWE WE Pulse Width 8 10 ns

tSD Data Set-Up to Write End 6 8 ns

tHD Data Hold from Write End 0 0 ns

tLZWE WE HIGH to Low Z[6] 33 ns

tHZWE WE LOW to High Z[5, 6] 67ns

Notes:

4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified

IOL/IOH and 30-pF load capacitance.

5. tHZOE, tHZCE, and tHZWE are specifiedwith a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.

6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

7. The internal write time of the memory is defined by the overlap of CE LOW and WE LOW. CE and WE must be LOW to initiate a write, and the transition of any

of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.

8. The minimum write cycle time for Write Cycle no. 3 (WE controlled, OE LOW) is the sum of tHZWE and tSD.

90%

10%

3.0V

GND

90%

10%

ALL INPUT PULSES

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

OUTPUT

5 pF

INCLUDING

JIG AND

SCOPE

(a) (b)

≤ 3 ns ≤3ns

OUTPUT

R1 480ΩR1 480Ω

255ΩR2

255Ω

167Ω

Equivalent to: THÉVENIN EQUIVALENT

1.73V

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CY7C1019BN

Document #: 001-06425 Rev. ** Page 4 of 8

Data Retention Characteristics Over the Operating Range (L Version Only)

Parameter Description Conditions Min. Max. Unit

VDR VCC for Data Retention No input may exceed VCC + 0.5V

VCC = VDR = 2.0V,

CE > VCC – 0.3V,

VIN > VCC – 0.3V or VIN < 0.3V

2.0 V

ICCDR Data Retention Current 300 µA

tCDR[3] Chip Deselect to Data Retention Time 0 ns

tROperation Recovery Time 200 µs

Data Retention Waveform

3.0V3.0V

tCDR

VDR >2V

DATA RETENTION MODE

VCC

Switching Waveforms

Read Cycle No. 1[9, 10]

Read Cycle No. 2 (OE Controlled)[10, 11]

Notes:

9. Device is continuously selected. OE, CE = VIL.

10.WE is HIGH for read cycle.

11.Address valid prior to or coincident with CE transition LOW.

PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

ADDRESS

DATA OUT

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

HIGH IMPEDANCE

tHZOE tHZCE

tPD

HIGH

ICC

ISB

IMPEDANCE

ADDRESS

DATA OUT

VCC

SUPPLY

CURRENT

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CY7C1019BN

Document #: 001-06425 Rev. ** Page 5 of 8

Write Cycle No. 1 (CE Controlled)[12, 13]

Write Cycle No. 2 (WE Controlled, OE HIGH During Write)[12, 13]

Notes:

12.Data I/O is high impedance if OE = VIH.

13.If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.

14.During this period the I/Os are in the output state and input signals should not be applied.

Switching Waveforms (continued)

tWC

DATA VALID

tAW

tSA

tPWE

tHA

tHD

tSD

tSCE

ADDRESS

DATA I/O

tHD

tSD

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZOE

DATAIN VALID

ADDRESS

DATA I/O

NOTE 14

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CY7C1019BN

Document #: 001-06425 Rev. ** Page 6 of 8

Write Cycle No. 3 (WE Controlled, OE LOW)[13]

Switching Waveforms (continued)

DATA VALID

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

ADDRESS

DATA I/O NOTE 14

Truth Table

CE OE WE I/O0–I/O7Mode Power

H X X High Z Power-Down Standby (ISB)

L L H Data Out Read Active (ICC)

L X L Data In Write Active (ICC)

L H H High Z Selected, Outputs Disabled Active (ICC)

Ordering Information

Speed

(ns) Ordering Code Package

Diagram Package Type Operating

Range

12 CY7C1019BN-12VC 51-85033 32-Lead 400-Mil Molded SOJ Commercial

CY7C1019BN-12ZC 51-85095 32-Lead TSOP Type II

CY7C1019BN-12ZXC 51-85095 32-Lead TSOP Type II (Pb-free)

15 CY7C1019BN-15VC 51-85033 32-Lead 400-Mil Molded SOJ Commercial

CY7C1019BN-15ZXC 51-85095 32-Lead TSOP Type II (Pb-free)

Please contact local sales representative regarding availability of these parts

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CY7C1019BN

Document #: 001-06425 Rev. ** Page 7 of 8

of any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be

used for medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its

products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress

products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.

All product or company names mentioned in this document may be the trademarks of their respective holders.

Package Diagrams

51-85033-A

51-85033-*B

32-pin (400-mil) Molded SOJ (51-85033)

51-85095-**

32-pin TSOP II (51-85095)

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CY7C1019BN

Document #: 001-06425 Rev. ** Page 8 of 8

Document History Page

Document Title: CY7C1019BN 128K x 8 Static RAM

Document Number: 001-06425

REV. ECN NO. Issue Date Orig. of

Change Description of Change

** 423847 See ECN NXR New Data Sheet

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