Larkin M5500 Bedienungsanleitung

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Larkin Power Components, Inc.

P.O. Box 14667, Spokane, WA 99214-0667, U.S.A.

Phone: 800-317-5526 Fax: (509) 891-5627

E-mail : lpc@larkinpower.com Web page : www.larkinpower.com

Power Semiconductor Tester

M5500

User’s Guide

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Table of Content

SPECIFICATIONS 3

TESTING POWER SEMICONDUCTORS 4

CLAMPING DEVICE FOR PRESSURE PACK DEVICES 5

CONNECTIONS ON DIODES AND THYRISTORS 5

OVERVIEW OF TESTING PROCEDURES 6

TESTING SET-UP AND PROCEDURES

Pressure Pack SCRs (Thyristors) 8

Pressure Pack Diodes 9

Stud-mounted diodes 9

GTOs (Gate Turn-off Thyristor) 10

Power Modules 11

Transistor Modules (IGBTs and DARLINGTONs) 12

Diode Modules for Rotating Rectifiers 13

USING THE OSCILLOSCOPE OPTION 14

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SPECIFICATIONS

Electrical specifications apply for an operating temperature range of 15oF to 120oF

(-10oC to 50oC), relative humidity up to 80%.

Input Voltage of M3K-120V Test Set 100-125V, 50-60Hz, 2A

Input Voltage of M3K-240V Test Set 220-245V, 50-60Hz, 2A

High Voltage Mode (PRV/PFV)

Peak Reverse and Forward Voltage 0 - 5800 VPK

Peak Leakage Current @ 3 Mohm 1.83 mA

Short Circuit Current 10 mA

Test Duration max. 15 seconds

Gate Mode

Gate Voltage 0 - 20 VDC, 10 ohm source impedance

Anode Voltage 14 - 18 V, 10 ohm, 1/2 sine wave

Panel Meters

PRV/PFV Mode

Peak Anode Voltage 6400 VPK

Peak Leakage Current 19.99 mA

Gate Mode

Gate Voltage 19.99VDC

Gate Current 1999 mA

Oscilloscope Input

PRV/PFV Mode

X- axis (voltage) sensitivity 1.0 V/div=1000 V/div

Y-axis (current) sensitivity 1.0 V/div=10 mA/div

Gate Mode (Anode Voltage/Current Curve)

X- axis (voltage) sensitivity 2.0 V/div=10 V/div (Anode Voltage)

Y-axis (current) sensitivity 2.0 V/div=1 A/div (Anode Current)

Case Dimensions (L x W x D) 19" x 14" x 7" / 49cm x 36cm x 18cm

Weight 20 Lbs. / 9.072 kg

Test Standard JEDEC JC22, RS397

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* * * CAUTION * * * *

The part to be tested must be Isolated & De-energized! Connecting the tester to live equipment

will damage the tester.

This equipment operates at voltages as high as 6400V.

Under no circumstances should the equipment EVER be operated without using the 3 wire line

cord, plugged into a properly grounded outlet.

The equipment must be operated in strict accordance with the operating instructions. The pro-

cedures are set up so that the voltage is turned to zero before a test is started.

Do not touch, or allow anyone else to touch, the test leads or the device under test while the

TEST BUTTON IS PRESSED!

THE “ART” OF TESTING POWER SEMICONDUCTORS

Manufacturers of power semiconductors follow the test methods outlined in the JEDEC sub-

committee JC22 for SCRs and Diodes. The standard for SCRs is RS397. One of the most im-

portant conditions of this test is that the rated voltage MUST NOT be exceeded.

An ideal SCR or Diode can have voltage applied until the device reaches avalanche voltage. In

practice, many devices have soft breakdown, “punch through” or surface breakdown before the

rated leakage current is reached. For these devices, exceeding the rated voltage established by

the manufacturer may result in instant failure or in down grading of the blocking characteristics.

Large devices have round silicon chips which have been beveled and contoured to reduce the

voltage stress at the device junctions at the end of the chip. These devices generally reach ava-

lanche voltage or “punch through” before breakdown occurs at the surface.

Small devices on the other hand are made from square chips. These devices are not protected by

the above methods and many will break down at the edge of the chip before avalanche voltage

is reached. This form of breakdown is almost always “fatal”

SUMMARY

DON’T use an OHMMETER

DON’T use a HI POT tester

DO use a tester that conforms to the JEDEC standards

NEVER exceed the manufacturers blocking voltage rating!

NEVER exceed the manufacturers leakage current rating!

If the maximum leakage current is reached before the rated blocking voltage is reached, STOP!

If the rated blocking voltage is reached before the rated leakage current is reached, STOP!

If possible, observe the E/I characteristics of the device on a X-Y oscilloscope.

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SIMPLE CLAMPING DEVICE

for

TESTING OF PRESSURE PACK DEVICES

The simple clamp arrangement below is sufficient for testing pressure pack devices, since the

force required to test these devices only has to be approx. 200 lbs.

SCRs/Thyristors

Diodes

NOTE : Diodes can have forward or reversed polarity. Polarity is determined by the direction

of the diode symbol stamped on the component, i.e. arrow pointing towards the stud (or base)

means forward polarity, arrow pointing towards the lead (or top) means reversed polarity.

Anode

Cathode

Gate

Anode

Aux. Cathode

Anode Cathode

Gate

CONNECTIONS ON DIODES AND THYRISTORS

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OPERATING INSTRUCTIONS

*** CAUTION : UP TO 6400V ON TEST LEADS ***

INTRODUCTION

This Power Semiconductor Tester is designed to perform testing of power semiconductors, such as,

SCRs/Thyristors, Diodes, IGBTs, Transistors, and most MOS FETs.

The Cathode (Emitter) of the device under test is operated near ground potential.

The tester performs three tests : PFV (Peak Forward Voltage), PRV (Peak Reverse Voltage), and Gate

Voltage and Current to trigger (Base Current for Transistors). The test circuits are of the type recom-

mended by the JEDEC test standards RS397. The PRV/PFV tests applies a PEAK REVERSE VOLT-

AGE or PEAK FORWARD VOLTAGE, half wave 50-60 Hertz wave form to the device and the result-

ing peak leakage current is measured by a peak storage circuit and displayed on a peak reading ammeter.

The E/I curve of the device can be displayed on an X/Y oscilloscope. The DC Gate test is used to meas-

ure the DC gate voltage and current required to trigger the device into its On-state. The Anode

(Collector) supply is half wave 50/60 Hertz wave form.

The tester provides a Gate Voltage high enough to test for turn-on of IGBTs and MOS FETs.

Both NPN and PNP bipolar transistors can be tested.

PREPARATIONS AND PRECAUTIONS

Plug the tester into a properly grounded three wire receptacle.

When testing pressure pack components (hockey pucks), the component MUST be compressed at ap-

prox. 200-300 lbs. On page 5 is a suggested simple device for compressing these types of components.

It is recommended that the instrument is connected to ground via the GROUND terminal on the front

panel. Note: When testing IGBTs or Darlington Transistor modules, the base plate on the module un-

der test MUST be connected to the GROUND terminal.

NEVER keep the test button pressed over 15 seconds!

NEVER touch the test leads or the device under test while the “TEST” button is depressed.

Always turn the Voltage Control to the zero position before connecting or disconnecting the device un-

der test.

It is possible to observe the E/I curve of the device under test by connecting an oscilloscope to the con-

nector on the front panel with the optional 2 connector cable. Connect the BNC connector with a red and

black wire to the X-axis and the BNC connector with a green wire to the Y-axis. Set the X-axis to 0.2V/

div for a sensitivity of 200V/div and the Y-axis to 0.1V/div for a sensitivity of 1mA/div. The output sen-

sitivity is automatically changed when the function switch is moved to the Gate position. Note that the

Anode wave form is displayed during the gate test, not the E/I curve.

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SCRs (THYRISTORS)

Make sure the Voltage Control is at the zero position (fully counter clock-wise) before turning the unit

on. Connect the Anode, Gate and Cathode leads to the device to be tested. DO NOT MIX UP THE

ANODE AND CATHODE LEADS OR HIGH VOLTAGE WILL BE APPLIED TO THE GATE!

Place the function switch in the PRV position and press the “TEST” button.

Slowly raise the Voltage Control while observing the Peak Voltage and Peak Leakage Current on the

panel meters. In a properly functioning device, the rated voltage should be reached before the current

starts to rise rapidly, (the “break-over point”). If the break-over point is reached before the rated volt-

age, the device is marginal. UNDER NO CIRCUMSTANCES MUST THE RATED VOLTAGE

OF THE DEVICE BE EXCEEDED!

Return the Voltage Control to the zero position

Place the function switch in the PFV position, depress the “TEST” button and repeat steps 3 and 4.

Place the function switch in the GATE position and press the “TEST” button.

Slowly raise the Voltage Control while observing the “TRIGGER INDICATION” light. The Gate Volt-

age and Gate Current will be displayed on the panel meters. The meter reading should be taken just prior

to the trigger point to avoid incorrect readings due to a gate impedance change after turn-on.

Return the Voltage Control to the zero position and disconnect the device.

DIODES

Make sure the Voltage Control is at the zero position (fully counter clock-wise) before turning the unit

on. Connect the Anode and Cathode leads to the device to be tested.

Place the function switch in the PRV position and press the “TEST” button.

Slowly raise the Voltage Control while observing the Peak Voltage and Peak Leakage Current on the

panel meters. In a properly functioning device, the rated voltage should be reached before the current

starts to rise rapidly, (the “break-over point”). UNDER NO CIRCUMSTANCES MUST THE DE-

VICE’S RATED VOLTAGE BE EXCEEDED!

Return the Voltage Control to the zero position

NOTE : Diodes only have to be tested in one direction. In certain instances you may find it easier to

hook up a diode with the leads reversed in which case you would then test with the function switch set

to PFV.

TRANSISTORS

The procedure for testing transistors is basically the same as for SCRs, with the exception of terminolo-

gy:

Cathode = Emitter, Anode = Collector, Gate = Base.

All types of transistors can by tested, such as, Darlingtons, IGBTs, and bipolar transistors.

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TESTING SET-UP AND PROCEDURES

PRESSURE PACK (Hockey Puck) SCRs (Thyristors)

Make sure the Voltage Control is at the zero position (fully counter

clockwise) before turning the unit on. Connect the Anode, Gate and

Cathode leads to the device to be tested. DO NOT MIX UP THE

ANODE AND CATHODE LEADS OR HIGH VOLTAGE WILL BE

APPLIED TO THE GATE!

Place the function switch in the PRV position and press the “TEST”

button.

Slowly increase the voltage while observing the Peak Voltage and Peak

Leakage Current on the panel meters.

In a properly functioning device, the rated voltage should be reached

before the current starts to rise rapidly, (the “break-over point”).

Place the function switch in the PFV position and repeat procedure

described above.

Place the function switch in the GATE position and slowly raise the

Voltage Control while observing the “TRIGGER INDICATION” light.

If the light does not turn on, the Gate on the SCR is faulty, and the device

should be replaced.

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PRESSURE PACK (Hockey Puck) Diodes

Make sure the Voltage Control is at the zero position (fully counter

clockwise) before turning the unit on. Connect the Anode and Cathode

leads to the device to be tested.

NOTE : Diodes only have to be tested in one direction. If the diode is

forward biased (standard), the function switch should be in the PRV

position. If the diode is reversed biased, the function switch should be in

the PFV position.

Place the function switch in the PRV (PFV) position and press the “TEST”

button.

Slowly increase the voltage while observing the Peak Voltage and Peak

Leakage Current on the panel meters.

In a properly functioning device, the rated voltage should be reached before

the current starts to rise rapidly, (the “break-over point”).

Make sure the Voltage Control is at the zero position (fully counter

clockwise) before turning the unit on. Connect the Anode and Cathode

leads to the device to be tested.

NOTE : Diodes only have to be tested in one direction. If the diode is

forward biased (standard), the function switch should be in the PRV

position. If the diode is reversed biased, the function switch should be in

the PFV position.

Place the function switch in the PRV (PFV) position and press the “TEST”

button.

Slowly increase the voltage while observing the Peak Voltage and Peak

Leakage Current on the panel meters.

In a properly functioning device, the rated voltage should be reached before

the current starts to rise rapidly, (the “break-over point”).

STUD MOUNTED DIODES

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GTOs (Gate Turn Off Thyristors)

Make sure the Voltage Control is at the zero position (fully counter clock-

wise) before turning the unit on. Connect the Anode, Gate and Cathode leads

to the device to be tested. DO NOT MIX UP THE ANODE AND

CATHODE LEADS OR HIGH VOLTAGE WILL BE APPLIED TO

THE GATE!

Place the function switch in the PRV position and press the “TEST” button.

Slowly increase the voltage while observing the Peak Voltage and Peak

Leakage Current on the panel meters.

In a properly functioning device, the rated voltage should be reached before

the current starts to rise rapidly, (the “break-over point”).

Note: Most GTOs are “Anode Short” type, which means that the anode break

-over voltage is only between 17 and 19 volts.

Place the function switch in the PFV position and repeat procedure described

above.

Place the function switch in the GATE position and slowly raise the Voltage

Control while observing the “TRIGGER INDICATION” light.

If the light does not turn on, the Gate on the SCR is faulty, and the device

should be replaced.

Note: The Gate on a GTO turns on at a lower voltage than a SCR. Typical

values are between 0.6 and 0.8 volt.

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