Cypress Semiconductor CY7C199 Bedienungsanleitung

32K x 8 Static RAM

CY7C199

Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600

Document #: 38-05160 Rev. ** Revised September 7, 2001

Features

• High speed

—10ns

•Fastt

DOE

• CMOS for optimum speed/power

• Low active power

—467 mW (max, 12 ns “L” version)

• Low standby power

—0.275 mW (max, “L” version)

• 2V data retention (“L” version only)

• Easy memory expansion with CE and OE features

• TTL-compatible inputs and outputs

• Automatic power-down when deselected

Functional Description

The CY7C199 is a high-performance CMOS static RAM orga-

nized as 32,768 words by 8 bits. Easy memory expansion is

provided by an active LOW Chip Enable (CE) and active LOW

Output Enable (OE) and three-state drivers. This device has

an automatic power-down feature, reducing the power con-

sumption by 81% when deselected. The CY7C199 is in the

standard 300-mil-wide DIP, SOJ, and LCC packages.

An active LOW Write Enable signal (WE) controls the writ-

ing/reading operation of the memory. When CE andWEinputs

are both LOW, data on the eight data input/output pins (I/O0

through I/O7) is written into the memory location addressed by

the address present on the address pins (A0through A14).

Reading the device is accomplished by selecting the device

and enabling the outputs, CE and OE active LOW, while WE

remains inactive or HIGH. Under these conditions, the con-

tents of the location addressed by the information on address

pins are present on the eight data input/output pins.

The input/output pins remain in a high-impedance stateunless

the chip is selected, outputs are enabled, and Write Enable

(WE) is HIGH. A die coat is used to improve alpha immunity.

Selection Guide

7C199-8 7C199-10 7C199-12 7C199-15 7C199-20 7C199-25 7C199-35 7C199-45

Maximum Access Time (ns) 81012 15 20 25 35 45

Maximum Operating

Current (mA) 120 110 160 155 150 150 140 140

L90 90 90 90 80 70

Maximum CMOS

Standby Current (mA) 0.5 0.5 10 10 10 10 10 10

L0.05 0.05 0.05 0.05 0.05 0.05

Shaded area contains advance information.

Logic Block Diagram Pin Configurations

COLUMN

DECODER

ROW DECODER

SENSE AMPS

INPUT BUFFER

POWER

DOWN

I/O0

I/O1

I/O2

I/O3

14 15

Top View

DIP / SOJ / SOIC

GND

A10

A11

A12

A13

VCC

I/O7

I/O6

I/O5

I/O4

A14

I/O0

I/O1

I/O2

I/O3

1024 x 32 x 8

ARRAY

I/O7

I/O6

I/O5

I/O4

321 27

1314151617

12 19

VCC

I/O5

GND

I/O4

I/O3

I/O2

A10

A11

A12

A13

A14 CE

I/O1I/O7

I/O6

I/O0

Top View

LCC

C199–1

C199–2

C199–3

510

VCC

I/O 7

I/O 6

I/O 5

GND

I/O 2

I/O 1

I/O 4

I/O 0

A14

A10

A11 A13

A12

C199–4

I/O 3

TSOP I

Top View

(not to scale)

CY7C199

Document #: 38-05160 Rev. ** Page 2 of 16

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature .................................–65°C to +150°C

Ambient Temperature with

Power Applied.............................................–55°C to +125°C

Supply Voltage to Ground Potential

(Pin 28 to Pin 14)...........................................–0.5V to +7.0V

DC Voltage Applied to Outputs

in High Z State[1] ...................................–0.5V to VCC + 0.5V

DC Input Voltage[1]................................–0.5V to VCC + 0.5V

Output Current into Outputs (LOW).............................20 mA

Static Discharge Voltage.......................................... >2001V

(per MIL-STD-883, Method 3015)

Latch-Up Current.................................................... >200 mA

Operating Range

Range Ambient Temperature[2] VCC

Commercial 0°C to +70°C 5V ±10%

Industrial –40°C to +85°C5V ±10%

Military –55°C to +125°C 5V ±10%

Electrical Characteristics Over the Operating Range[3]

7C199-8 7C199-10 7C199-12 7C199-15

Parameter Description Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit

VOH Output HIGH

Voltage VCC = Min., IOH=–4.0 mA 2.4 2.4 2.4 2.4 V

VOL Output LOW

Voltage VCC = Min., IOL=8.0 mA 0.4 0.4 0.4 0.4 V

VIH Input HIGH

Voltage 2.2 VCC

+0.3V 2.2 VCC

+0.3V V

VIL Input LOW

Voltage –0.5 0.8 –0.5 0.8 –0.5 0.8 –0.5 0.8 V

IIX Input Load

Current GND <VI< VCC –5+5 –5+5–5+5–5+5µA

IOZ Output Leakage

Current GND < VO <VCC,

Output Disabled –5+5 –5+5–5+5–5+5µA

ICC VCC Operating

Supply Current VCC = Max.,

IOUT = 0 mA,

f = fMAX = 1/tRC

Com’l120 110 160 155 mA

L85 85 100 mA

Mil 180 mA

ISB1 Automatic CE

Power-Down

Current—TTL

Inputs

Max. VCC,

CE > VIH,

VIN > VIH or

VIN < VIL, f = fMAX

Com’l553030mA

L555mA

ISB2 Automatic CE

Power-Down

Current—CMOS

Inputs

Max. VCC,

CE > VCC –0.3V

VIN > VCC –0.3V

or VIN < 0.3V, f= 0

Com’l0.5 0.5 10 10 mA

L0.05 0.05 0.05 0.05 mA

Mil 15 mA

Shaded area contains advance information.

Notes:

1. VIL (min.)= –2.0V for pulse durations of less than 20 ns.

2. TAis the “instant on”case temperature.

3. See the last page of this specification for Group A subgroup testing information.

CY7C199

Document #: 38-05160 Rev. ** Page 3 of 16

]

Electrical Characteristics Over the Operating Range[3] (continued)

7C199-20 7C199-25 7C199-35 7C199-45

Parameter Description Test Conditions Min. Max. Min. Max. Min. Max. Min. Max. Unit

VOH Output HIGH

Voltage VCC = Min., IOH=–4.0 mA 2.4 2.4 2.4 2.4 V

VOL Output LOW

Voltage VCC = Min., IOL=8.0 mA 0.4 0.4 0.4 0.4 V

VIH Input HIGH

Voltage 2.2 VCC

+0.3V 2.2 VCC

+0.3V V

VIL Input LOW

Voltage –0.5 0.8 -0.5 0.8 -0.5 0.8 -0.5 0.8 V

IIX Input Load

Current GND <VI< VCC –5+5–5+5–5+5 –5+5µA

IOZ Output Leakage

Current GND <VI <VCC,

Output Disabled –5+5–5+5–5+5 –5+5µA

ICC VCC Operating

Supply Current VCC = Max.,

IOUT = 0 mA,

f = fMAX = 1/tRC

Com’l 150 150 140 140 mA

L90807070mA

Mil 170 150 150 150 mA

ISB1 Automatic CE

Power-Down

Current—

TTL Inputs

Max.VCC,CE> VIH,

VIN > VIH

or VIN < VIL, f = fMAX

Com’l30 30 25 25mA

L5555mA

ISB2 Automatic CE

Power-Down

Current—

CMOS Inputs

Max. VCC,

CE > VCC –0.3V

VIN > VCC –0.3V or

VIN < 0.3V, f=0

Com’l10 10 10 10mA

L 0.05 0.05 0.05 0.05 µA

Mil 15 15 15 15 mA

Capacitance[4]

Parameter Description Test Conditions Max. Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz,

VCC = 5.0V 8pF

COUT Output Capacitance 8 pF

Note:

4. Tested initially and after any design or process changes that may affect these parameters.

CY7C199

Document #: 38-05160 Rev. ** Page 4 of 16

AC Test Loads and Waveforms[5]

Data Retention Characteristics Over the Operating Range (L version only)

Parameter Description Conditions[6] Min. Max. Unit

VDR VCC for Data Retention 2.0 V

ICCDR Data Retention Current Com’l VCC = VDR = 2.0V,

CE > VCC –0.3V,

VIN > VCC –0.3V or

VIN < 0.3V

µA

Com’l L 10 µA

tCDR[4] Chip Deselect to Data Retention Time 0ns

tR[5] Operation Recovery Time 200 µs

Data Retention Waveform

Note:

5. tR<3 ns for the -12 andthe -15 speeds. tR<5 ns for the -20 and slower speeds

6. No input may exceed VCC + 0.5V.

3.0V

OUTPUT

R1 481Ω

255 Ω

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10% 90%

10%

≤tr≤tr

OUTPUT

R1 481Ω

255Ω

5pF

INCLUDING

JIG AND

SCOPE

(a) (b)

OUTPUT 1.73V

Equivalent to: THÉVENIN EQUIVALENT

ALL INPUT PULSES

C199–5C199–6

167Ω

C199–7

3.0V3.0V

tCDR

VDR >2V

DATA RETENTION MODE

VCC

CY7C199

Document #: 38-05160 Rev. ** Page 5 of 16

Switching Characteristics Over the Operating Range[3, 7]

7C199-8 7C199-10 7C199-12 7C199-15

UnitParameter Description Min. Max. Min. Max. Min. Max. Min. Max.

READ CYCLE

tRC Read Cycle Time 810 12 15 ns

tAA Address to Data Valid 8 101215ns

tOHA Data Hold from Address Change 3333ns

tACE CE LOW to Data Valid 8 101215ns

tDOE OE LOW to Data Valid 4.5 5 5 7 ns

tLZOE OE LOW to Low Z[8] 0000ns

tHZOE OE HIGH to High Z[8, 9] 5557ns

tLZCE CE LOW to Low Z[8] 3333ns

tHZCE CE HIGH to High Z[8,9] 4557ns

tPU CE LOW to Power-Up 0000ns

tPD CE HIGH to Power-Down 8 101215ns

WRITE CYCLE[10, 11]

tWC Write Cycle Time 810 12 15 ns

tSCE CE LOW to Write End 77910ns

tAW Address Set-Up to Write End 77910ns

tHA Address Hold from Write End 0000ns

tSA Address Set-Up to Write Start 0000ns

tPWE WE Pulse Width 7789ns

tSD Data Set-Up to Write End 5589ns

tHD Data Hold from Write End 0000ns

tHZWE WE LOW to High Z[9] 5677ns

tLZWE WE HIGH to Low Z[8] 3333ns

Shaded area contains advance information.

Notes:

7. Test conditions assume signal transition time of 3 ns or less for -12 and -15 speeds and 5 ns or less for -20 and slower speeds, timing reference levels of 1.5V,

input pulse levels of 0 to 3.0V, and output loading of the specified IOL/IOH and 30-pF load capacitance.

8. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.

9. tHZOE, tHZCE, and tHZWE are specified with CL= 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.

10. The internal write time of the memory is defined by the overlap of CELOW and WE LOW. Both signals must be LOW to initiate a write and either signal can terminate

a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signalthat terminates the write.

11. The minimum write cycle time for write cycle #3 (WEcontrolled, OE LOW) is the sum oftHZWE and tSD.

CY7C199

Document #: 38-05160 Rev. ** Page 6 of 16

Switching Characteristics Over the Operating Range[3,7] (continued)

7C199-20 7C199-25 7C199-35 7C199-45

Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Unit

READ CYCLE

tRC Read Cycle Time 20 25 35 45 ns

tAA Address to Data Valid 20 25 35 45 ns

tOHA Data Hold from Address

Change 33 3 3 ns

tACE CE LOW to Data Valid 20 25 35 45 ns

tDOE OE LOW to Data Valid 9 10 16 16 ns

tLZOE OE LOW to Low Z[8] 00 0 0 ns

tHZOE OE HIGH to High Z[8, 9] 9111515ns

tLZCE CE LOW to Low Z[8] 33 3 3 ns

tHZCE CE HIGH to High Z[8, 9] 9111515ns

tPU CE LOW to Power-Up 0 0 0 0 ns

tPD CE HIGH to Power-Down 20 20 20 25 ns

WRITE CYCLE[10,11]

tWC Write Cycle Time 20 25 35 45 ns

tSCE CE LOW to Write End 15 18 22 22 ns

tAW Address Set-Up to Write End 15 20 30 40 ns

tHA Address Hold from Write End 0 0 0 0 ns

tSA Address Set-Up to Write Start 0 0 0 0 ns

tPWE WE Pulse Width 15 18 22 22 ns

tSD Data Set-Up to Write End 10 10 15 15 ns

tHD Data Hold from Write End 0 0 0 0 ns

tHZWE WE LOW to High Z[9] 10 11 15 15 ns

tLZWE WE HIGH to Low Z[8] 33 3 3 ns

Switching Waveforms

Read Cycle No. 1[12, 13]

Notes:

12. Device is continuously selected. OE, CE = VIL.

13. WEis HIGH for read cycle.

ADDRESS

DATA OUT PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

C199–8

CY7C199

Document #: 38-05160 Rev. ** Page 7 of 16

Read Cycle No. 2 [13, 14]

Write Cycle No. 1 (WE Controlled)[10, 15, 16]

Write Cycle No. 2 (CE Controlled)[10, 15, 16]

Notes:

14. Address valid prior to or coincident with CE transition LOW.

15. Data I/O is high impedance if OE= VIH.

16. If CEgoes HIGH simultaneously with WE HIGH, the output remains ina high-impedance state.

Switching Waveforms (continued)

50%

DATA VALID

tRC

tACE

tDOE

tLZOE

tLZCE

tPU

DATA OUT HIGH IMPEDANCE IMPEDANCE

ICC

ISB

tHZOE

tHZCE

tPD

HIGH

VCC

SUPPLY

CURRENT

C199–9

tHD

tSD

tPWE

tSA

tHA

tAW

tWC

DATA I/O

ADDRESS

tHZOE C199–10

DATAIN VALID

tWC

tAW

tSA

tHA

tHD

tSD

tSCE

DATA I/O

ADDRESS

C199–11

DATA IN VALID

CY7C199

Document #: 38-05160 Rev. ** Page 8 of 16

Write Cycle No. 3 (WE Controlled OE LOW)[11, 16]

Typical DC and AC Characteristics

Switching Waveforms (continued)

DATA I/O

ADDRESS

tHD

tSD

tLZWE

tSA

tHA

tAW

tWC

tHZWE C199–12

DATAIN VALID

1.2

1.4

1.0

0.6

0.4

0.2

4.0 4.5 5.0 5.5 6.0

1.6

1.4

1.2

1.0

0.8

–55 25 125

1.2

1.0

0.8

NORMALIZED t

120

100

0.0 1.0 2.0 3.0 4.0

OUTPUT SOURCE CURRENT (mA)

SUPPLY VOLTAGE (V)

NORMALIZED SUPPLY CURRENT

vs. SUPPLY VOLTAGE

NORMALIZED ACCESS TIME

vs. AMBIENT TEMPERATURE

AMBIENT TEMPERATURE (°C)

NORMALIZED SUPPLY CURRENT

vs. AMBIENT TEMPERATURE

AMBIENT TEMPERATURE (°C) OUTPUT VOLTAGE (V)

OUTPUT SOURCE CURRENT

vs. OUTPUT VOLTAGE

0.0

0.8

1.4

1.1

1.0

0.9

4.0 4.5 5.0 5.5 6.0

NORMALIZED t

SUPPLY VOLTAGE (V)

NORMALIZED ACCESS TIME

vs. SUPPLY VOLTAGE

120

140

100

0.0 1.0 2.0 3.0 4.0

OUTPUT SINK CURRENT (mA)

OUTPUT VOLTAGE (V)

OUTPUT SINK CURRENT

vs. OUTPUT VOLTAGE

0.6

0.4

0.2

0.0

NORMALIZED I

ISB

ICC

VCC =5.0V VCC =5.0V

TA=25°C

VCC =5.0V

TA=25°C

ISB

TA=25°C

0.6

0.8

1.3

1.2

VIN =5.0V

TA=25°C

1.4

VCC =5.0V

VIN =5.0V

CY7C199

Document #: 38-05160 Rev. ** Page 9 of 16

Truth Table

CE WE OE Inputs/Outputs Mode Power

H X X High Z Deselect/Power-Down Standby (ISB)

L H L Data Out Read Active (ICC)

L L X Data In Write Active (ICC)

L H H High Z Deselect, Output Disabled Active (ICC)

Ordering Information

Speed

(ns) Ordering Code Package

Name Package Type Operating

Range

8CY7C199-8VC V21 28-Lead Molded SOJ Commercial

CY7C199-8ZC Z28 28-Lead Thin Small Outline Package

CY7C199L-8VC V21 28-Lead Molded SOJ

CY7C199L-8ZC Z28 28-Lead Thin Small Outline Package

10 CY7C199-10VC V21 28-Lead Molded SOJ Commercial

CY7C199-10ZC Z28 28-Lead Thin Small Outline Package

CY7C199L-10VC V21 28-Lead Molded SOJ

CY7C199L-10ZC Z28 28-Lead Thin Small Outline Package

CY7C199-10VI V21 28-Lead Molded SOJ Industrial

CY7C199-10ZI Z28 28-Lead Thin Small Outline Package

CY7C199L-10VI V21 28-Lead Molded SOJ

CY7C199L-10ZI Z28 28-Lead Thin Small Outline Package

12 CY7C199-12PC P21 28-Lead (300-Mil) Molded DIP Commercial

CY7C199-12VC V21 28-Lead Molded SOJ

CY7C199-12ZC Z28 28-Lead Thin Small Outline Package

CY7C199L-12PC P21 28-Lead (300-Mil) Molded DIP

CY7C199L-12VC V21 28-Lead Molded SOJ

CY7C199L-12ZC Z28 28-Lead Thin Small Outline Package

CY7C199-12VI V21 28-Lead Molded SOJ Industrial

CY7C199-12ZI Z28 28-Lead Thin Small Outline Package

CY7C199L-12VI V21 28-Lead Molded SOJ

CY7C199L-12ZI Z28 28-Lead Thin Small Outline Package

Shaded area contains advance information. Contact your Cypress sales representative for availability

Typical DC and AC Characteristics (continued)

3.0

2.5

2.0

1.5

1.0

0.5

0.0 1.0 2.0 3.0 4.0

NORMALIZED I

SUPPLY VOLTAGE (V)

TYPICALPOWER-ON CURRENT

vs.SUPPLY VOLTAGE 30.0

25.0

20.0

15.0

10.0

5.0

0 200 400 600 800

DELTA t (ns)

CAPACITANCE (pF)

TYPICAL ACCESS TIMECHANGE

vs. OUTPUT LOADING 1.25

1.00

0.75

10 20 30 40

NORMALIZED I

CYCLE FREQUENCY (MHz)

NORMALIZED ICC vs.CYCLETIME

0.0 5.0 0.0 1000 0.50

VCC =4.5V

TA=25°C

VCC =5.0V

TA=25°C

VIN =0.5V

CY7C199

Document #: 38-05160 Rev. ** Page 10 of 16

15 CY7C199-15PC P21 28-Lead (300-Mil) Molded DIP Commercial

CY7C199-15VC V21 28-Lead Molded SOJ

CY7C199-15ZC Z28 28-Lead Thin Small Outline Package

CY7C199L-15PC P21 28-Lead (300-Mil) Molded DIP

CY7C199L-15VC V21 28-Lead Molded SOJ

CY7C199L-15ZC Z28 28-Lead Thin Small Outline Package

CY7C199-15VI V21 28-Lead Molded SOJ Industrial

CY7C199-15ZI Z28 28-Lead Thin Small Outline Package

CY7C199-15DMB D22 28-Lead (300-Mil) CerDIP Military

CY7C199-15LMB L54 28-Pin Rectangular Leadless Chip Carrier

CY7C199L-15DMB D22 28-Lead (300-Mil) CerDIP

CY7C199L-15LMB L54 28-Pin Rectangular Leadless Chip Carrier

20 CY7C199-20PC P21 28-Lead (300-Mil) Molded DIP Commercial

CY7C199-20VC V21 28-Lead Molded SOJ

CY7C199-20ZC Z28 28-Lead Thin Small Outline Package

CY7C199L-20PC P21 28-Lead (300-Mil) Molded DIP

CY7C199L-20VC V21 28-Lead Molded SOJ

CY7C199L-20ZC Z28 28-Lead Thin Small Outline Package

CY7C199-20VI V21 28-Lead Molded SOJ Industrial

CY7C199-20ZI Z28 28-Lead Thin Small Outline Package

CY7C199-20DMB D22 28-Lead (300-Mil) CerDIP Military

CY7C199-20LMB L54 28-Pin Rectangular Leadless Chip Carrier

CY7C199L-20DMB D22 28-Lead (300-Mil) CerDIP

CY7C199L-20LMB L54 28-Pin Rectangular Leadless Chip Carrier

25 CY7C199-25PC P21 28-Lead (300-Mil) Molded DIP Commercial

CY7C199-25SC S21 28-Lead Molded SOIC

CY7C199-25VC V21 28-Lead Molded SOJ

CY7C199-25ZC Z28 28-Lead Thin Small Outline Package

CY7C199L-25ZI Z28 28-Lead Thin Small Outline Package Industrial

CY7C199-25DMB D22 28-Lead (300-Mil) CerDIP Military

CY7C199-25LMB L54 28-Pin Rectangular Leadless Chip Carrier

35 CY7C199-35PC P21 28-Lead (300-Mil) Molded DIP Commercial

CY7C199-35SC S21 28-Lead Molded SOIC

CY7C199-35VC V21 28-Lead Molded SOJ

CY7C199-35ZC Z28 28-Lead Thin Small Outline Package

CY7C199-35DMB D22 28-Lead (300-Mil) CerDIP Military

CY7C199-35LMB L54 28-Pin Rectangular Leadless Chip Carrier

45 CY7C199-45DMB D22 28-Lead (300-Mil) CerDIP Military

CY7C199-45LMB L54 28-Pin Rectangular Leadless Chip Carrier

Ordering Information (continued)

Speed

(ns) Ordering Code Package

Name Package Type Operating

Range

Shaded area contains advance information. Contact your Cypress sales representative for availability

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