Cypress Semiconductor STK14C88-3 Bedienungsanleitung

STK14C88-3

256 Kbit (32K x 8) AutoStore nvSRAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose

CA 95134-1709 • 408-943-2600

Document Number: 001-50592 Rev. ** Revised January 29, 2009

Features

■

35 ns and 45 ns access times

■

Automatic nonvolatile STORE on power loss

■

Nonvolatile STORE under Hardware or Software control

■

Automatic RECALL to SRAM on power up

■

Unlimited Read/Write endurance

■

Unlimited RECALL cycles

■

1,000,000 STORE cycles

■

100 year data retention

■

Single 3.3V+0.3V power supply

■

Commercial and Industrial Temperatures

■

32-pin (300mil) SOIC and 32-pin (600 mil) PDIP packages

■

RoHS compliance

Functional Description

The Cypress STK14C88-3 is a 256 Kb fast static RAM with

a nonvolatile element in each memory cell. The embedded

nonvolatile elements incorporate QuantumTrap

™

technology producing the world’s most reliable nonvolatile

memory. The SRAM provides unlimited read and write

cycles, while independent, nonvolatile data resides in the

highly reliable QuantumTrap cell. Data transfers from the

SRAM to the nonvolatile elements (the STORE operation)

takes place automatically at power down. On power up, data

is restored to the SRAM (the RECALL operation) from the

nonvolatile memory. Both the STORE and RECALL opera-

tions are also available under software control.

STORE/

RECALL

CONTROL

POWER

CONTROL

SOFTWARE

DETECT

STATIC RAM

ARRAY

512 X 512

Quantum Trap

512 X 512

STORE

RECALL

COLUMN I/O

COLUMN DEC

ROW DECODER

INPUT BUFFERS

HSB

CC V

CAP

A13 -A0

A0A1A2A3A4A10

A11

A12

A13

A14

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

Logic Block Diagram

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STK14C88-3

Document Number: 001-50592 Rev. ** Page 2 of 17

Pin Configurations

Figure 1. Pin Diagram - 32-Pin SOIC/32-Pin PDIP

Table 1. Pin Definitions - 32-Pin SOIC/32-Pin PDIP

Pin Name Alt IO Type Description

–A

Input Address Inputs. Used to select one of the 32,768 bytes of the nvSRAM.

-DQ

Input or

Output Bidirectional Data IO lines. Used as input or output lines depending on operation.

WE WInput Write Enable Input, Active LOW. When the chip is enabled and WE is LOW, data on the

IO pins is written to the specific address location.

CE EInput Chip Enable Input, Active LOW. When LOW, selects the chip. When HIGH, deselects the

chip.

OE GInput Output Enable, Active LOW. The active LOW OE input enables the data output buffers

during read cycles. Deasserting OE HIGH causes the IO pins to tri-state.

Ground Ground for the Device.The device is connected to ground of the system.

Power Supply Power Supply Inputs to the Device.

HSB Input or

Output Hardware Store Busy (HSB). When LOW, this output indicates a Hardware Store is in

progress. When pulled low external to the chip, it initiates a nonvolatile STORE operation. A

weak internal pull up resistor keeps this pin high if not connected (connection optional).

CAP

Power Supply AutoStore

Capacitor. Supplies power to nvSRAM during power loss to store data from

SRAM to nonvolatile elements.

[+] Feedback

STK14C88-3

Document Number: 001-50592 Rev. ** Page 3 of 17

Device Operation

The STK14C88-3 nvSRAM is made up of two functional compo-

nents paired in the same physical cell. These are an SRAM

memory cell and a nonvolatile QuantumTrap cell. The SRAM

memory cell operates as a standard fast static RAM. Data in the

SRAM is transferred to the nonvolatile cell (the STORE

operation) or from the nonvolatile cell to SRAM (the RECALL

operation). This unique architecture enables the storage and

recall of all cells in parallel. During the STORE and RECALL

operations, SRAM READ and WRITE operations are inhibited.

The STK14C88-3 supports unlimited reads and writes similar to

atypicalSRAM.In addition,it providesunlimited RECALL opera-

tions from the nonvolatile cells and up to one million STORE

operations.

SRAM Read

The STK14C88-3 performs a READ cycle whenever CE and OE

are LOW while WE and HSB are HIGH. The address specified

onpins A

0–14

determines the32,768databytes accessed.When

the READ is initiated by an address transition, the outputs are

valid after a delay of t

(READ cycle 1). If the READ is initiated

by CE or OE, the outputs are valid at t

ACE

or at t

DOE

, whichever

is later (READ cycle 2). The data outputs repeatedly respond to

address changes within the t

access time without the need for

transitions on any control input pins, and remains valid until

another address change or until CE or OE is brought HIGH, or

WE or HSB is brought LOW.

SRAM Write

AWRITE cycleis performedwhenever CEand WEare LOWand

HSBisHIGH. Theaddressinputsmust bestableprior toentering

the WRITE cycle and must remain stable until either CE or WE

goes HIGH at the end of the cycle. The data on the common IO

pins DQ

0–7

are written into the memory if it has valid t

, before

the end of a WE controlled WRITE or before the end of an CE

controlledWRITE.KeepOEHIGHduringthe entireWRITEcycle

to avoid data bus contention on common IO lines. If OE is left

LOW,internalcircuitry turns off the output buffers t

HZWE

afterWE

goes LOW.

AutoStore

Operation

The STK14C88-3 can be powered in one of three storage opera-

tions:

During normal operation, the device draws current from V

charge a capacitor connected to the V

CAP

pin. This stored

charge is used by the chip to perform a single STORE operation.

If the voltage on the V

pin drops below V

SWITCH

, the part

automatically disconnects the V

CAP

pin from V

. A STORE

operation is initiated with power provided by the V

CAP

capacitor.

Figure 2 shows the proper connection of the storage capacitor

CAP

) for automatic store operation. A charge storage capacitor

having a capacity of between 68 uF and 220 uF (+20%) rated at

4.7V should be provided.

To reduce unnecessary nonvolatile stores, AutoStore and

Hardware Store operations are ignored, unless at least one

WRITE operation has taken place since the most recent STORE

or RECALL cycle. Software initiated STORE cycles are

performed regardless of whether a WRITE operation has taken

place. An optional pull-up resistor is shown connected to HSB.

The HSB signal is monitored by the system to detect if an

AutoStore cycle is in progress.

If the power supply drops faster than 20 us/volt before Vcc

reaches V

SWITCH

, then a 1 ohm resistor should be connected

between V

and the system supply to avoid momentary excess

of current between V

and V

CAP

AutoStore Inhibit Mode

If an automatic STORE

on power loss is not required, then V

is tied to ground and +3.3V is applied to V

CAP

(Figure 3). This is

the AutoStore Inhibit mode, where the AutoStore function is

disabled. If the STK14C88-3 is operated in this configuration,

references to V

are changed to V

CAP

throughout this data

sheet. In this mode, STORE

operations are triggered through

software control. It is not permissible to change between these

options “On the fly”.

Figure 2. AutoStore Mode

[+] Feedback

STK14C88-3

Document Number: 001-50592 Rev. ** Page 4 of 17

Hardware STORE (HSB) Operation

The STK14C88-3 provides the HSB pin for controlling and

acknowledging the STORE operations. The HSB pin is used

to request a hardware STORE cycle. When the HSB pin is

driven LOW, the STK14C88-3 conditionally initiates a STORE

operation after t

DELAY

. An actual STORE cycle only begins if a

WRITE to the SRAM takes place since the last STORE or

RECALL cycle. The HSB pin also acts as an open drain driver

that is internally driven LOW to indicate a busy condition, while

the STORE (initiated by any means) is in progress. Pull up this

pin with an external 10K ohm resistor to V

CAP

if HSB is used

as a driver.

SRAM READ and WRITE operations, that are in progress

when HSB is driven LOW by any means, are given time to

complete before the STORE operation is initiated. After HSB

goes LOW, the STK14C88-3 continues SRAM operations for

DELAY

. During t

DELAY

, multiple SRAM READ operations take

place. If a WRITE is in progress when HSB is pulled LOW, it

allows a time, t

DELAY

to complete. However, any SRAM

WRITE cycles requested after HSB goes LOW are inhibited

until HSB returns HIGH.

The HSB pin is used to synchronize multiple STK14C88-3

while using a single larger capacitor. To operate in this mode,

the HSB pin is connected together to the HSB pins from the

other STK14C88-3. An external pull up resistor to V

CAP

required, since HSB acts as an open drain pull down. The

CAP

pins from the other STK14C88-3 parts are tied together

and share a single capacitor. The capacitor size is scaled by

the number of devices connected to it. When any one of the

STK14C88-3 detects a power loss and asserts HSB, the

common HSB pin causes all parts to request a STORE

cycle.

(A STORE

takes place in those STK14C88-3 that are written

since the last nonvolatile cycle.)

During any STORE operation, regardless of how it is initiated,

the STK14C88-3 continues to drive the HSB pin LOW,

releasing it only when the STORE is complete. After

completing the STORE operation, the STK14C88-3 remains

disabled until the HSB pin returns HIGH.

If HSB is not used, it is left unconnected.

Hardware RECALL (Power Up)

During power up or after any low power condition (V

RESET

), an internal RECALL request is latched. When V

once again exceeds the sense voltage of V

SWITCH

, a RECALL

cycleisautomaticallyinitiated andtakest

HRECALL

tocomplete.

If the STK14C88-3 is in a WRITE

state at the end of power up

RECALL, the SRAM

data is corrupted. To help avoid this

situation, a 10 Kohm resistor is connected either between WE

and system V

or between CE and system V

Software STORE

Data is transferred from the SRAM to the nonvolatile memory

by a software address sequence. The STK14C88-3 software

STOREcycleisinitiatedbyexecutingsequentialCE controlled

READ cycles from six specific address locations in exact

order. During the STORE cycle, an erase of the previous

nonvolatile data is first performed followed by a program of the

nonvolatile elements. When a STORE cycle is initiated, input

and output are disabled until the cycle is completed.

Because a sequence of READs from specific addresses is

used for STORE initiation, it is important that no other READ

or WRITE accesses intervene in the sequence. If they

intervene, thesequence isaborted andno STOREorRECALL

takes place.

To initiate the software STORE cycle, the following READ

sequence is performed:

1. Read address 0x0E38, Valid READ

2. Read address 0x31C7, Valid READ

3. Read address 0x03E0, Valid READ

4. Read address 0x3C1F, Valid READ

5. Read address 0x303F, Valid READ

6. Read address 0x0FC0, Initiate STORE cycle

The software sequence is clocked with CE controlled READs.

When the sixth address in the sequence is entered, the

STORE cycle commences and the chip is disabled. It is

important that READ cycles and not WRITE cycles are used

in the sequence. It is not necessary that OE is LOW for a valid

sequence. After the t

STORE

cycle time is fulfilled, the SRAM is

again activated for READ and WRITE operation.

Figure 3. AutoStore Inhibit Mode

[+] Feedback

STK14C88-3

Document Number: 001-50592 Rev. ** Page 5 of 17

Software RECALL

Data is transferred from the nonvolatile memory to the SRAM by

a software address sequence. A software RECALL cycle is

initiated with asequenceof READoperations ina manner similar

to the software STORE initiation. To initiate the RECALL cycle,

the following sequence of CE controlled READ operations is

performed:

1. Read address 0x0E38, Valid READ

2. Read address 0x31C7, Valid READ

3. Read address 0x03E0, Valid READ

4. Read address 0x3C1F, Valid READ

5. Read address 0x303F, Valid READ

6. Read address 0x0C63, Initiate RECALL cycle

Internally, RECALLisa two stepprocedure. First,theSRAM data

is cleared, and then the nonvolatile informationistransferredinto

the SRAM cells. After the t

RECALL

cycle time, the SRAM is once

again ready for READ and WRITE operations. The RECALL

operation does not alter the data in the nonvolatile elements.The

nonvolatile data can be recalled an unlimited number of times.

Preventing STORE

The STORE

function can be disabled on the fly by holding HSB

high with a driver capable of sourcing 30 mA at a V

of at least

2.2V, because it has to overpower the internal pull down device.

This device drives HSB LOW for 20 μs at the onset of a STORE.

When the STK14C88-3 is connected for AutoStore operation

(system V

connected to V

and a 68 μF capacitor on V

CAP

)

and V

crosses V

SWITCH

on the way down, the STK14C88-3

attempts to pull HSB LOW. If HSB does not actually get below

, the part stops trying to pull HSB LOW and aborts the STORE

attempt.

Hardware Protect

The STK14C88-3 offers hardware protection against inadvertent

STORE operation and SRAM WRITEs during low voltage condi-

tions. When V

CAP

SWITCH

, all externally initiated STORE

operations and SRAM WRITEs are inhibited.

Noise Considerations

The STK14C88-3 is a high speed memory. It must have a high

frequency bypass capacitor of approximately 0.1 µF connected

between V

and V

SS,

using leads and traces that are as short

as possible. As with all high speed CMOS ICs, careful routing of

power, ground, and signals reduce circuit noise.

Low Average Active Power

CMOS technology provides the STK14C88-3 the benefit of

drawing significantly lesscurrent when itis cycledat times longer

than 50 ns. Figure 4 and Figure 5 show the relationship between

and READ or WRITE cycle time. Worst case current

consumption is shown for both CMOS and TTL input levels

(commercial temperature range, VCC = 3.6V, 100% duty cycle

on chip enable). Only standby current is drawn when the chip is

disabled. The overall average current drawn by the STK14C88-3

depends on the following items:

1. The duty cycle of chip enable

2. The overall cycle rate for accesses

3. The ratio of READs to WRITEs

4. CMOS versus TTL input levels

5. The operating temperature

6. The V

level

7. IO loading

Figure 4. Current Versus Cycle Time (READ)

Figure 5. Current Versus Cycle Time (WRITE)

[+] Feedback

STK14C88-3

Document Number: 001-50592 Rev. ** Page 6 of 17

Best Practices

nvSRAM products have been used effectively for over 15

years. While ease-of-use is one of the product’s main system

values, experience gained working with hundreds of applica-

tions has resulted in the following suggestions as best

practices:

■

The nonvolatile cells in an nvSRAM are programmed on the

test floor during final test and quality assurance. Incoming

inspection routines at customer or contract manufacturer’s

sites,sometimes,reprogramthesevalues.FinalNVpatterns

are typically repeating patterns of AA, 55, 00, FF, A5, or 5A.

End product’s firmware should not assume an NV array is in

a set programmed state. Routines that check memory

content values to determine first time system configuration

and cold or warm boot status, should always program a

unique NV pattern (for example, a complex 4-byte pattern of

46 E6 49 53 hex or more random bytes) as part of the final

system manufacturing test to ensure these system routines

work consistently. Power up boot firmware routines should

rewrite the nvSRAM into the desired state. While the

nvSRAMisshippedinapresetstate,bestpracticeistoagain

rewrite the nvSRAM into the desired state as a safeguard

against events that might flip the bit inadvertently (program

bugs or incoming inspection routines).

■

The V

CAP

value specified in this data sheet includes a

minimumandamaximumvaluesize.Bestpracticeistomeet

this requirement and not exceed the max V

CAP

value

becausethe higher inrush currentsmayreduce the reliability

of the internal pass transistor. Customers who want to use a

larger V

CAP

value to ensure there is extra store charge

should discuss their V

CAP

size selection with Cypress to

understand any impact on the V

CAP

voltage level at the end

of a t

RECALL

period.

Table 2. Hardware Mode Selection

CE WE HSB A

– A

Mode IO Power

H X H X Not Selected Output High Z Standby

L H H X Read SRAM Output Data Active

[1]

L L H X Write SRAM Input Data Active

X X L X Nonvolatile Store Output High Z I

CC2[2]

LHH0x0E38

0x31C7

0x03E0

0x3C1F

0x303F

0x0FC0

Read SRAM

Nonvolatile STORE

Output Data

Active

[1, 3, 4, 5]

LHH0x0E38

0x31C7

0x03E0

0x3C1F

0x303F

0x0C63

Read SRAM

Nonvolatile RECALL

Output Data

Active

[1, 3, 4, 5]

Notes

1. I/O state assumes OE < V

. Activation of nonvolatile cycles does not depend on state of OE.

2. HSB STORE operation occurs only if an SRAM WRITE has been done since the last nonvolatile cycle. After the STORE (if any) completes, the part will go

into standby mode, inhibiting all operations until HSB rises.

3. CE and OE LOW and WE HIGH for output behavior.

4. The six consecutive addresses must be in the order listed. WE must be high during all six consecutive CE controlled cycles to enable a nonvolatile cycle.

5. While there are 15 addresses on the STK14C88-3, only the lower 14 are used to control software modes.

[+] Feedback

STK14C88-3

Document Number: 001-50592 Rev. ** Page 7 of 17

Maximum Ratings

Exceeding maximum ratings may shorten the useful life of the

device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Temperature under bias.............................. –55°C to +125°C

Supply Voltage on V

Relative to GND..........–0.5V to 7.0V

Voltage on Input Relative to Vss............–0.6V to V

+ 0.5V

Voltage on DQ

0-7

or HSB .......................–0.5V to Vcc + 0.5V

Power Dissipation .........................................................1.0W

DC output Current (1 output at a time, 1s duration) ....15 mA

Operating Range

Range Ambient Temperature V

Commercial 0°C to +70°C 3.0V to 3.6V

Industrial -40°C to +85°C 3.0V to 3.6V

DC Electrical Characteristics

Over the operating range (V

= 3.0V to 3.6V)

[6]

Parameter Description Test Conditions Min Max Unit

CC1

Average V

Current t

= 35 ns

= 45 ns

Dependentonoutputloadingandcyclerate.Values

obtained without output loads.

OUT

= 0 mA.

Commercial 50

42 mA

Industrial 52

44 mA

CC2

Average V

Current

during STORE All Inputs Do Not Care, V

= Max

Average current for duration t

STORE

3mA

CC3

Average V

Current

at t

= 200 ns, 5V,

25°C Typical

WE > (V

– 0.2V). All other inputs cycling.

Dependent on output loading and cycle rate. Values obtained without

output loads.

9mA

CC4

AverageV

CAP

Current

during AutoStore

Cycle

All Inputs Do Not Care, V

= Max

Average current for duration t

STORE

2mA

SB1[7]

Average V

Current

(Standby, CyclingTTL

Input Levels)

=35ns, CE > V

=45ns, CE > V

Commercial 18

16 mA

Industrial 19

17 mA

SB2[7]

Standby Current

(Standby, Stable

CMOS Input Levels)

CE > (V

– 0.2V). All others V

<0.2V or > (V

– 0.2V). 1 mA

InputLeakage Current V

= Max, V

< V

-1 +1 μA

Off State Output

Leakage Current V

= Max, V

< V

, CE or OE > V

or WE < V

-1 +1 μA

Input HIGH Voltage 2.2 V

0.5 V

Input LOW Voltage V

–

0.5 0.8 V

Output HIGH Voltage I

OUT

= –4 mA except HSB 2.4 V

Output LOW Voltage I

OUT

= 8 mA except HSB 0.4 V

Logic ‘0’ Voltage on

HSB output I

OUT

= 3 mA 0.4 V

CAP

Storage Capacitor Between V

CAP

pin and Vss, 68 to 220uF +20%, 4.7V rated. 54 264 uF

Notes

6. V

reference levels throughout this data sheet refer to V

if that is where the power supply connection is made, or V

CAP

if V

is connected to ground.

7. CE > V

will not produce standby current levels until any nonvolatile cycle in progress has timed out.

[+] Feedback

STK14C88-3

Document Number: 001-50592 Rev. ** Page 8 of 17

Data Retention and Endurance

Parameter Description Min Unit

DATA

Data Retention 100 Years

Nonvolatile STORE Operations 1,000 K

Capacitance

In the following table, the capacitance parameters are listed.

[8]

Parameter Description Test Conditions Max Unit

Input Capacitance T

= 25°C, f = 1 MHz,

= 0 to 3.0 V 5pF

OUT

Output Capacitance 7 pF

Thermal Resistance

In the following table, the thermal resistance parameters are listed.

[8]

Parameter Description Test Conditions 32-SOIC 32-PDIP Unit

Thermal Resistance

(Junction to Ambient) Test conditions follow standard test methods and

proceduresformeasuring thermalimpedance,per

EIA / JESD51.

TBD TBD °C/W

Thermal Resistance

(Junction to Case) TBD TBD °C/W

Figure 6. AC Test Loads

AC Test Conditions

3.3V

Output

30 pF

R1 317Ω

351Ω

Input Pulse Levels..................................................0 V to 3 V

Input Rise and Fall Times (10% - 90%)........................ <5 ns

Input and Output Timing Reference Levels................... 1.5 V

Note

8. These parameters are guaranteed by design and are not tested.

[+] Feedback

STK14C88-3

Document Number: 001-50592 Rev. ** Page 9 of 17

AC Switching Characteristics

SRAM Read Cycle

Parameter Description 35 ns 45 ns Unit

Min Max Min Max

Cypress

Parameter Alt

ACE

ELQV

Chip Enable Access Time 35 45 ns

RC [9]

AVAV,

ELEH

Read Cycle Time 35 45 ns

AA [10]

AVQV

Address Access Time 35 45 ns

DOE

GLQV

Output Enable to Data Valid 15 20 ns

OHA [10]

AXQX

Output Hold After Address Change 5 5 ns

LZCE [11]

ELQX

Chip Enable to Output Active 5 5 ns

HZCE [11]

EHQZ

Chip Disable to Output Inactive 13 15 ns

LZOE [11]

GLQX

Output Enable to Output Active 0 0 ns

HZOE [11]

GHQZ

Output Disable to Output Inactive 13 15 ns

PU [8]

ELICCH

Chip Enable to Power Active 0 0 ns

PD [8]

EHICCL

Chip Disable to Power Standby 35 45 ns

Switching Waveforms

Figure 7. SRAM Read Cycle 1: Address Controlled

[9, 10]

Figure 8. SRAM Read Cycle 2: CE and OE Controlled

[9]

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Notes

9. WE and HSB must be HIGH during SRAM Read Cycles.

10.I/O state assumes CE and OE < V

and WE > V

; device is continuously selected.

11. Measured ±200 mV from steady state output voltage.

[+] Feedback

STK14C88-3

Document Number: 001-50592 Rev. ** Page 10 of 17

Table 3. SRAM Write Cycle

Parameter Description 35 ns 45 ns Unit

Min Max Min Max

Cypress

Parameter Alt

AVAV

Write Cycle Time 35 45 ns

PWE

WLWH,

WLEH

Write Pulse Width 25 30 ns

SCE

ELWH,

ELEH

Chip Enable To End of Write 25 30 ns

DVWH,

DVEH

Data Setup to End of Write 12 15 ns

WHDX,

EHDX

Data Hold After End of Write 0 0 ns

AVWH,

AVEH

Address Setup to End of Write 25 30 ns

AVWL,

AVEL

Address Setup to Start of Write 0 0 ns

WHAX,

EHAX

Address Hold After End of Write 0 0 ns

HZWE [11,12]

WLQZ

Write Enable to Output Disable 13 15 ns

LZWE [11]

WHQX

Output Active After End of Write 5 5 ns

Switching Waveforms

Figure 9. SRAM Write Cycle 1: WE Controlled

[13, 14]

Figure 10. SRAM Write Cycle 2: CE Controlled

[13, 14]

SCE

PWE

HZWE

LZWE

ADDRESS

DATA IN

DATA OUT

DATA VALID

HIGH IMPEDANCE

PREVIOUS DATA

ADDRESS

SCE

PWE

DATA IN

DATA OUT

HIGH IMPEDANCE

DATA VALID

Notes

12.If WE is Low when CE goes Low, the outputs remain in the high impedance state.

13.CE or WE must be greater than V

during address transitions.

14.HSB must be HIGH during SRAM WRITE cycles.

[+] Feedback

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Beliebte Computerhardware Handbücher anderer Marken

EMC2

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Panasonic

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Mitsubishi Electric

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Gigabyte

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Raidon

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National Instruments

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Hauppauge

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Kontron

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Manhattan

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Aphex

Aphex 230 Bedienungsanleitung

AMD

AMD Phenom II Betriebshandbuch

Intel

Intel NUC 12 Pro Bedienungsanleitung

dbx

dbx Zone Pro 1260 Bedienungsanleitung

Galaxy

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Intel

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Kontron

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STEINWAY LYNGDORF

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