Kenwood TR-751A Bedienungsanleitung

Andere Handbücher für TR-751A

1

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144MHz

ALL

MODE

TRANSCEIVER

_TR-751A/E

|

TRIO-KENWOOD

CORPORATIC

.

SERVICE

MANUAL

|

|

©1986-5

PRINTED

IN

JAPAN

BS51-2084-00(0)1501

Photo

is

TR-751A.

TR-751A/E

CIRCUIT

DESCRIPTION

MODEL

UNIT

TR-751A

(K,

M1,

M2)

TR-751E

(W,

T)

FINAL

UNIT

X45-1490-11

X45-1490-11

CONTROL

UNIT

X53-1460-11

(K,

M1)

X53-1460-21

(M2)

X53-1460-51

(T)

-_X53-1460-61

(W)

COMPOSITE

UNIT

X60-1310-11

X60-1310-

(PLL,

TX)

3

00:5319;0)

COMPOSITE

UNIT

a

X60-1320-11

X60-1320-00

|

Table

1

TR-751A/E

PC

board

chort

FREQUENCY

CONFIGURATION

The

TR-751A/E

utilizes

a

PLL

synthesizer

system

in-

corporating

a

digital

VFO,

which

covers

each

band

in

50Hz

steps.

(See

Fig.

1.)

Received

signals

are

mixed

with

the

first

local

oscillator

(133.305

to

137.295MHz)

to

produce

the

first

intermediate

frequency

of

10.695MHz.

In

SSB

or

CW,

the

receiver

operates

as

a

single

conversion

system.

The

10.695MHz

IF

signal

is

applied

to

crystal

filter

XF1

(L71-0249-05),

and

the

signal

is

then

applied

to

the

ring

detector

to

obtain

the

audio

output.

In

FM,

the

receiver

operates

as

a

double

conversion

system.

The

10.695MHz

signal

is

mixed

with

the

PLL

re-

ference

frequency

of

10.24MHz

to

produce

the

second

intermediate

frequency

of

455kHz.

The

transmitter

system

operates

as

a

double

conversion

system.

In

SSB

mode,

output

from

the

carrier

oscillator

is

modulated

by

a

balanced

modulator

to

produce

an

inter-

mediate

frequency

signal,

which

is

then

mixed

with

the

first

local

oscillator

signal

to

produce

the

two

meter

transmit

signal.

The

carrier

oscillator

circuit

is

controlled

by

the

microprocessor

according

to

the

selected

mode.

During

USB

or

CW

receive,

the

carrier

oscillator

fre-

quency

is

10.6935MHz.

During

LSB

receive,

it

is

10.6965

MHz.

During

CW

transmit,

it is

10.6943MHz.

In

FM,

a

455kHz

10.695MHz

crystal

oscillator

frequency

is

used

that

is

directly

modulated

and

then

mixed

with

the

first

local

oscillator

signal.

To

minimize

internal

heterodyne

tones

and

spurs

in

the

frequency

generator

and

analysis

are

controlled

by

a

microprocessor.

The

PLL-based

frequency

system

consists

of

two

PLL

synthesizer

loops

controlled

by

a

4-bit

high-

speed

microprocessor

and

a

stable,

analog

RIT

oscillator

circuit.

Item

Nominal

frequency

10.695MHz_

Within

2200Hz

at

6d8_

|'2.2kH2

or

more

at

6d8

|

Witt

+1.5kHz

at

20dB

Within

#2.4kHz

at

608

Allowable

center

freq’

deviation

Pass

bandwidth

and

attenuation

bandwidth

(based

on

minimum

loss).

Ripple

7

248

or

less

Minimum

loss

|

SdB

or

less

Guaranteed

attenuation

4

60dB

or

more

within

t40kHz

1/0

terminating

impedance

1.2k225%/60F

25%

Table

2

Crystal

filter

10F2.2S

(L71-0249-05)

characteristics

(Composit

unit

(RX)

XF1)

5

:

2sc2714(¥)

MIXER

Qn

1as0~te6

ome

10.6935MHz

10.6965MHz

L

PLL

SYSTEM

]

10.24Mtz

é

T

oWax

:

10.c035mHe

"AR

OSC

;

iz

l

CW-TX

=

10.69¢3MH2

J

133.305~137.295MHz

10.695MHz

XF

(RX,

TX

common)

10.695MHz

rl

+

|

MIXER

Fig.

1

Frequency

configuration

RECEIVER

SYSTEM

©

General

Incoming

signals

from

the

antenna

pass

through

a

low-

Pass

filter

in

the

Transmitter

Final

unit

and

a

diode

switch

(D5,D6)

for

transmit/receive

selection.

The

signals

then

go

through

two

antenna

coils

(L201

and

L202)

and

then

are

amplified

by

a

GaAs

FET

(Q201).

Undesired

signals

are

removed

from

the

RF

signal

by

a

3-pole

helical

resonator

(L203)

and

the

resulting

signal

is

then

applied

to

the

first

mixer

(Q202).

The

signal

is

mixed

there

with

the

first

local

oscillator

signal

from

the

PLL

system

to

produce

the

first

IF

signal

of

10.695MHz.

Undesiable

adjacent

channel

signals

are

removed

from

the

first

IF

signal

by

a

two

stage

monolithic

crystal

filter

(MCF

:

XF201).

The

first

IF

signal

is

then

distributed

to

either

the

SSB

2

@

or

FM

circuits.

@

In

the

SSB

circuit,

the

first

IF

signal

goes

through

noise

blanker

gate

(D1

and

D2)

then

amplified

by

a

Dual

Gate

MOS

FET

(Q1)

and

then

applied

to

the

SSB

crystal

filter

(XF1).

The

filtered

signal

is

then

amplified

by

the

Ist

IF

Amplifier

(Q2)

and

the

2nd

IF

Amplifier

(Q3)

and

then

applied

to

the

ring

detector

(D5—D8)

to

obtain

the

recei-

ved

audio

signal.

In

the

FM

circuit,

the

first

IF

signal

is

amplified

bya

~

Grounded

Gate

(Q4)

J-FET

and

applied

to

the

second

é€

mixer

(Q5).

The

IF

signal

is

mixed

with

10.24MHz

to

pro-

duce

the

second

IF

signal

of

455kHz.

Adjacent

channel

~

_

interference

is

removed

from

the

second

IF

signals

by

FM

ceramic

filter

(CF1),

the

second

IF

signal

is

then

amplified

and

detected

by

IC2

to

obtain

the

received

audio

signal.

The

audio

signal

from

the

SSB

and

FM

circuits

is

then

amplified

by

a

common

audio

preamplifier

Q1

(X59-

1110-00).

High-frequency

components

are

removed

from

the

audio

signal

by

an

active

LPF

(Q2).

The

audio

signal

is

then

applied

to

the

audio

volume

control

on

the

front

6

Panel.

The

audio

signal

is

amplified

again

by

audio

amplifier

1C1

(X60-1310-XX)

and

then

applied

to

the

speaker.

Item

|

Rating

Nominal

center

frequency

(fo)

|10.695MHz

Pass

bat

width

_

‘a

___|

Within

£7.5kHz

at

348

Within

*25kHz

at

4008

Within

245kHz

at

6008

Attenuation

bandwidth

40d8

or

more

spurious

|

at

fo~fo

+

SOO0kHz

|

80d8

or

more

spurious

at

_

|

fo—(9102

10kHz)

Ripple

|

1.008

or

less

[inser

ion

loss

1.5dB

or

less

Guaranteed

attenuation

70d8

or

more

within

+

1MHz

|

3k2/00F

€

=

_

[Terminating

impedance

Table

3

10.695MHz

MCF

(L71-0216-05)

characteristics

(Composit

unit

(RX)

XF201)

TR-751A/E

CIRCUIT

DESCRIPTION

Item

|

Rating

Nominal

center

frequency

_|

455kHz#

1kHz

-

6dB

bandwidth

26kHz

(from

455kHz)

50dB

bandwidth

__|

Within

£12.5kHz

(from

455kH2)|

Ripple

(within

24kHz

from

455kH2)

_

|

948

oF

less

[iosertion

loss

—

68

or

less

_

Guaranteed

attenuation

(within

#100kHz

from

455kH2)

|

9548

oF

less

|20ka

Lv

matching

impedance

Table

4

Ceramic

filter

CFW

455F

(L71-0315-05)

characteristics

(Composite

unit

(RX)

CF1)

©

Front

end

and

AGC

circuit

The

performance

of

any

receiver

is

determined

largely

by

the

performance

of

its

front

end

section.

Important

factors

which

determine

the

performance

of

a

receiver

are

sensitivity

and

two

signal

characteristics.

Recently,

most

single

mode

receivers

have

used

GaAs

FETs

to

improve

their

sensitivity,

while

all-mode

receivers

used

Dual

Gate

MOS

FETs

for

improved

AGC

characteristics

and

RF

gain

control

of

their

high

frequency

amplifiers.

This

was

because,

even

though

the

AGC

line

was

placed

between

the

high

frequency

amplifier

and

intermediate

frequency

ampli-

fier,

the

best

way

to

improve

the

AGC

characteristic

had

been

to

control

the

second

gate

of

the

dual-gate

MOS

FET.

When

GaAs

FET’s

were

used,

such

AGC

characteris-

tics

had

not

been

obtained

even

if

the

second

gate

was

controlled

by

the

same

voltage

that

was

used

for

a

Dual

Gate

MOS

FET.

Fig.

2

shows

the

AGC

Vs.

gain

attenuation

Characteristics

obtained

from

the

high

frequency

amplifier

(MOS

FET

:

3SK76)

and

GaAs

FET

:

3SK129

used

ina

TR-9000G.

Since

the

intermediate

frequency

amplifier

uses

a

MOS

FET

:

3SK73,

almost

no

attenuation

occurs

in

the

high

frequency

amplifier

even

if

the

AGC

voltage

is

fed

directly

into

the

GaAs

FET.

RF

AMP

GAIN

OdB

when

G2

voltage

is

4V

G2

Voltage

(Vv)

————-

3SK76

MOSFET

—————

35K

129

GoAsFET

Fig.

2

AGC

attenuation

comparison

3

TR-751A/E

CIRCUIT

DESCRIPTION

The

TR-751A/E

AGC

circuit

has

been

designed

to

allow

the

AGC

voltage

to

control

the

GaAs

FET

similar

to

the

control

that

was

obtained

with

the

MOS

FET.

As

shown

in

Fig.

3,

AGC

voltage

from

an

amplifier

similar

to

that

used

in

previous

models

is

fed

into

the

intermediate

fre-

quency

amplifier.

The

AGC

voltage

is

approx.

4V

when

no

signal

is

present.

The

AGC

voltage

is

amplified

by

the

non-DC

current

inversion

amplifier

circuit

that

is

com-

posed

of

Op

Amplifier

(1C3).

Its

output

is

then

applied

to

the

GaAs

FET.

The

output

voltage

is

set

to

approx.

2.5V

when

no

signal

is

present,

or

at

minimum

RF

gain.

The

AGC

characteristics

are

shown

in

Fig.

4.

The

AGC

time

constant

is

automatically

switched

to

slow

in

SSB

mode

or

to

fast

in

CW

mode.

The

high

sensitivity

of

the

receiver

system

is

thus

obtained

without

sacrificing

any

two

signal

characteristic.

Additionally,

the

RF

gain

control,

provides

a

convenient

method

of

tuning

out

undesired

signals

even

when

receiving

signals

that

are

too

strong

from

near

by

local

stations.

AGC

BUFFER

OErELTOR

VF

AGC

TIME

CONSTANT

AGC AMP

SWITCHING

CIRCUIT

RF

AMP

GAIN

wav.

0d8

when

G2

volta

G2

Voltage

(v)

Fig.

4

AGC

attenuation

comparison

RF

AMP

AGC

VOLTAGE

SHIFT

CIRCUIT

VF VF

IF

AMP

AGC

1 r

71

0

+8V

THRESHOLO.

LEVEL

AO.

3

2,03

3SK73

c20

SSB

IF

AMP

O—=—|

|

To

O

RF

AMP AGC

LINE

NON-DC

CURRENT

INVERSION

AM

1C3

:

NIMASSBC

g

RF

GAIN

CONTROL

fo)

Sse

SOL

TIME

CONSTANT

SWITCHING

Fig.

3

AGC

circuit

black

diagram

©@

SSB

squelch

circuit

The

TR-751A/E

SSB

suqlech

circuit

is

a

noise

operated

type

squelch.

As

compared

with

signal

type

squelch,

noise

detection

squelch

may

be

opened

even

by

very

weak

signals,

such

as

are

frequently

encountered

in

SSB.

The

high

sensitivity

of

the

squelch

circuit

provides

advantages

when

receiving

VHF

signals

from

distant

sta-

tions

and

when

scanning.

Generally,

signal

type

squelch

cannot

surpass

noise

detection

type

in

sensitivity,

since

they

are

opened

by

changes

in

the

AGC

voltage.

It

means

that,

to

open

a

signal

type

squelch,

sufficient

voltage

level

of

signal

to

deflect

the

$

meter

is

required.

The

sensitivity

of

the

TR-751A/E

squelch

is

0.14V

or

less

(a

weak

signal

which

will

not

deflect

the

S

meter.)

The

squelch

signal

is

applied

to

1C2

used

in

FM

mode,

through

the

SSB

filter,

SSB

IF,

and

buffer

amplifier.

This

IC,

mixes

the

signal

with

10.24MHz

to

produce

455kHz.

Like

the

FM

IF,

the

455kHz

signal

is

also

amplified

by

1C2

and

applied

to

the

same

squelch

circuit

as

that

used

in

FM

mode.

Since

SSB

signals

do

not

contain

carrier,

unlike

FM

signals,

the

time

constant

circuit

is

switched

between

FM

mode

and

SSB

mode

to

get

an

appropriate

response

time.

TR-751A/E

CIRCUIT

DESCRIPTION

TRANSMITTER

SYSTEM

©

General

The

transmitter

system

operates

as

a

single

conversion

system,

Audio

signals

from

the

microphone

are

amplified

by

a

low-noise

transistor

(Q25)

and

applied

to

the

SSB

or

FM

circuits

which

provide

approx.

26dB

gain

In

SSB,

the

amplified

signal

passes

through

the

SSB

microphone

gain

control,

and

is

amplified

by

(Q27)

and

applied

to

the

balanced

modulator

(IC4).

The

balanced

modulator

consists

of

an

IC

that

provides

stable

carrier

suppression

without

being

influenced

by

changes

in

tem-

perature.

Signals

from

the

microphone

amplifier

are

mixed

with

the

carrier

to

produce

a

DSB

signal.

The

DSB

signal

is

applied

to

the

SSB

filter

(with

a

center

frequency

of

10.695MHz)

to

produce

the

SSB

signal.

In

FM,

the

signal

amplified

by

the

SSB/FM

common

micro-

phone

amplifier

(Q25)

is

applied

through

the

buffer ampli-

fier

(Q24)

and

FM

microphone

gain

control,

and

then

to

the

pre-emphasis

circuit,

amplified

by

(1C1),

and

limited

by

Op

amplifier

(1C1).

High

frequency

components

are

then

removed

from

the

signal

by

a

18dB/oct

splatter

filter,

and

the

signal

is

sent

to

the

FM

modulation

circuit.

In

the

FM

modulation

circuit,

signals

from

the

10.695

MHz

crystal

oscillator

circuit

are

directly

modulated

by

varactor

diode

(D21),

variable

capacitor.

This

direct

fre-

quency

modulation

enables

a

flat

transmitter

frequency

response

to

be

obtained

from

low

frequencies

to

high

frequencies.

If

the

frequency

deviation

becomes

excessive,

the

deviation

level

will

vary

from

the

upper

to

the

lower

portion

of

the

signal.

The

TR-751A/E

is

designed

so

that

the

upper

and

lower

portions

of

the

signal

are

balanced

even

with

maximum

frequency

deviation.

SSB/FM

switching

is

performed

by

diode

switching

cir-

cuit

according

to

the

selected

mode,

and

then

amplified

by

the

transmitter

IF

circuit.

This

IF

amplifier

circuit

con-

sists

of

a

dual-gate

MOS

FET,

whose

second

gate

is

pro-

vided

with

ALC

voltage

to

control

the

transmitter

output.

The

transmitter

IF

signal

is

then

mixed

with

the

PLL

signal

by

balanced

mixer

consisting

of

two

FETs

(Q1,

Q2)

to

produce

a

144MHz

signal.

Undesirable

components

are

removed

from

the

signal

by

a

band-pass

filter

to

mini-

mize

spurious

emission.

The

signal

from

the

band-pass

filter

is

then

amplified

twice,

once

by

a

dual-gate

MOS

FET

(Q3)

and

once

by

transistor

(Q4),

to

raise

the

signal

to

the

level

necessary

to

drive

the

Final

unit.

The

TR-751A/E

contains

an

additional

transistor

amplifier

(Q5)

The

signal

from

the

drive

circuit

is

amplified

by

the

power

module

(Q1)

in

the

Final

unit,

and

goes

through

the

ANT

switching

and

diodes

(D5,

D6)

and

low-pass

filter

to

remove

higher

harmonics,

and

is

supplied

to

the

antenna

©

CW

circuit

description

In

CW,

the

balanced

modulator

is

unbalanced

by

AGC

signal

to

allow

the

carrier

to

pass.

CW

keying

is

performed

by

switching

the

balanced

mixer

in

the

drive

circuit

and

a

bias

voltage

is

applied

to

the

first

gate

of

amplifier.

Fig.

5

shows

the

keying

waveform.

The

leading

and

trailing

edges

are

smoothed

to

prevent

key

clicks.

To

facilitate

CW

communications,

the

CW

circuit

con-

tains

CW

semi

break-in

and

side

tone

circuits.

The

CW

semi

break-in

circuit

is

a

Schmitt

circuit

consist-

ing

of

transistors

(Q1—Q4)

or

the

break-in

sub

assembly.

The

delay

time

can

be

adjusted

with

VR7.

The

side

tone

circuit

operates

whenever

the

key

is

closed.

The

side

tone

circuit

operates

in

modes

other

than

CW,

so

key

adjustment

and

morse

code

practice

can

be

performed.

Transistor

(Q9)

is

used

as

the

oscillator.

Signals

from

the

side

tone

circuit

are

amplified

by

the

audio

amp-

lifier

(1C1).

The

output

frequency

of

approx.

800Hz

can

be

adjusted

with

potentiometer

(VR4).

TT

TM,

ai

I

cell

iii

|

|

ee

LUTATNE

EUUGUGLOGEUOCE!:SUEEUEE

ALUTUNUELLETUONNL

LY

|

|--smeee

Fig.

5

CW

waveform

TR-751A/E

CIRCUIT

DESCRIPTION

@

ALC

and

SWR

protection

circuits

Fig.

6

shows

the

basic

ALC

and

SWR

protection

circuits.

The

SWR

protection

circuit

detects

and

amplifies

any

ALC

detection

is

made

by

amplifying

a

sample

from

the

reflected

power

due

to

mismatching

in

the

antenna

with

a

Power

module

in

the

Final

unit..

The

DC

output

signal

is

CM

coupler.

Output

from

the

SWR

protection

Circuit

amplified

by

transistor

(Q7)

lower

the

ALC

which

controls

lowers

the

ALC

reference

voltage

to

reduce

the

gain

of

the

the

gain

of

the

IF

amplifiers.

Low

power

is

selected

by

power

module

for

protection.

controling

the

ALC

Amplifier

(Q7)

with

transistor

(Q8)

If

the

linearity

of

the

Final

is

not

well

balanced

with

ALC

feedback,

SSB

distortion

may

occur.

The

TR-751A/E

is

designed

to

minimize

SSB

distortion.

—

a

FINAL

UNIT

(X45-1490-11)

TE

IE

AME

|

ALC

DETECTOR

SWR

PROTECTION

DETECTION

f

1

fi

. ,

024:3SK73(GR)

|

91

:ms7727

=

eee

COMPOSITE

UNIT

(X60-1310-XX)

LOW

POWER

SW

Low

POWER

SWITCHING

‘ALC

AMP,

PROTECTION

AMP

Fig.

6

ALC

and

SWR

protectioncircuits

PLL

SYNTHESIZER

Fig.

7

is

the

PLL

system

block

diagram,

nd

The

most

important

feature

of

the

TR-751A/E

PLL

system

is

that

it

the

main

loop

VCO

(Loop

A)

is

composed

of

a

sub-unit

to

avoid

the

unit

being

influenced

by

outside

forces

(especially vibration),

which

improve

the

frequency

stability.

During

mobile

operation

in

SSB

or

CW,

this

Provides

a

great

increase

advantage

in

reliability.

The

PLL

system

uses

two

loops

to

form

a

digital

VFO

which

covers

each

band

in

50Hz

steps.

Each

of

the

loops

uses

a

PLL

IC

(TC9172P)

with

pulse

swallow

type

pre-

scaler.

The

B

loop

utilizes

a

2.5kHz

comparison

frequency.

The

range

of

its

VCO

output

fregency

is

from

28

to

27MHz

(frequency

division

ratio

11200

to

10800

:

1).

The

B

loop

VCO

output

is

frequency

divided

by

50

(to

produce

©

560

to

540kHz).

which

is

used

to

produce

a

signal

that

covers

20kHz

from

9.68

to

9.70MHz

in

5OHz

steps.

This

signal

is

then

mixed

with

the

reference

oscillator

frequency

of

10.24MHz.

UNLOCK

Sw

6

a7

TR-751A/E

CIRCUIT

DESCRIPTION

The

RIT

oscillator

circuit

utilizes

a

signal

of

11.805MHz

which

is

multipled

by

nine.

The

oscillator

frequency

range

can

be

varied

+1.2kHz

or

more

by

varying

the

voltage

of

the

variable

capacitor

in

the

oscillator

(analog

control).

When

the

RIT

switch

is

off,

the

variable

capacitor

voltage

is

fixed,

because

of

high

resistance,

and

the

RIT

oscillator

operates

as

a

stable

local

frequency

oscillator.

The RIT

ON

signal

is

detected

by

the

microprocessor

and

transferred

to

the

PLL

IC

containing

which

contains

an

I/O

port

to

control

the

RIT

switching

circuit.

The

RIT

oscillator

out-

Put

is

mixed

with

9.68

to

9.70MHz

to

produce

a

frequency

fange

from

115.925

to

115.945MHz

for

A

loop

mixing.

The

A

loop

uses

a

20kHz

comparison

frequency

to

control

loop

A

over

a

range

of

IF

17.38

to

19.37MHz

to

yield

a

VCO

output

range

frequency

from

133.305

to

137.305MHz

(frequency

division

ratio

869

to

1069

:

1).

To

cover

the

entire

band

in

50Hz

steps,

the

VCO

output

is

mixed

with

local

oscillator

signals

of

115.925

to

115.945

MHz.

As

described

above,

the

PLL

system

reliability

is

im-

Proved

by

incorporating

the

VCO

A

loop

asa

sub-unit

and

high

density

system

by

using

large

scale

integration.

fea

TATBIO"

raw

|

10.

20mne

5

b——4

ozenne

A

~stoune

tan

10685

fet

(133.305

~137308

139.3065

~137.3085

139.0:

NA

_

865-1088

7

NB

1120-10890

=

=

_

t

Fig.

7

PLLsystem

block

diagram

TR-751A/E

CIRCUIT

DESCRIPTION

DIGITAL

CONTROL

UNIT

©

General

The

Control

unit

consists

of

two

PC

boards

:

one

on

the

front

panel

and

the

other

on

the

main

chassis.

The

pro-

cessing

is

controlled

by

three

microprocessor

(hereafter

called

the

MPUs).

Fig.

8

is

the

Control

unit

block

diagram.

The

Control

unit

includes

three

MPUs,

their

interface

ciruits,

an

input

circuit

(consisting

of

a

rotary

encoder,

keys,

and

switches),

a

reset

backup

circuit,

a

mode

switching

circuit,

and

various

other

switching

circuits.

tscan'contnouy

vo

(voiee

outs

me

|

iw

rao

prorsorser

(woot

enances

Yom

ic

ute

a

if

g

oe

‘berter

iden

rome

out)

Fig.

8

Control

unit

block

diagtam

€

€

CIRCUIT

DESCRIPTION

@

MPU

interface

circuits

Fig.

9

shows

how

the

three

MPUs

are

interfaced.

To

exchange

data

between

the

MPUs,

three

clock

and

data

W/O

lines

(SCK,

SI

and

SO)

and

two

each

of

contro!

lines

SCK,

SOR,

DCK,

and

DRQ

are

provided

FRONT

PANEL

(X$3-1460-XX)

(8/6)

©

Reset

backup

circuit

Fig.

9

also

shows

the

reset

backup

circuit.

When

the

transceiver

power

is

turned

on,

an

approx.

20ms

H

level

Pulse

is

sent

from

the

reset

circuit

using

a

dedicated

reset

IC

(IC201)

to

the

RES

line.

Since

the

RES

line

is

connect-

ed

to

all

MPUs

(MPU-I,

MPU-II,

MPU-III),

the

MPUs

begin

operation

at

the

same

time.

When

the

power

is

turned

off,

1C202

recognizes

that

the

voltage

of

the

5V

line

fell

to

4.5V

or

less,

and

sets

the

low

voltage

fallen

detect

line

(VFD)

to

a

low

level.

The

VFD

signal

is

sent

to

MPU-I

POO

and

MPU

enters

the

backup

mode.

Output

voltage

from

the

lithium

battery

for

backup

is

supplied

to

MPU-I

and

MPU-II

providing

backup

for

two

MPUs.

I

MAIN

CHASSIS.

)

(X53-1460-XX)

(A/6)

a

SV

LINE

RESET

CIRCUIT

5

L

LOW

VOLTAGE

OeTecT

|

im

—

83

oureut

IC

202

:pstsz3c

&

(%

when

the

SV

line

falls

)

EQUIVALENT

3

|

Ito

4.5v

oF

less

during

power

on.

CIRCUIT

3

qu

LITHIUM

BATTER’

Fig.

9

Intertace

between

MPUs

and

reset

backup

circuit

TR-751A/E

CIRCUIT

DESCRIPTION

@

Key,

switch

and

encoder

circuits

MIC

Pin

6

Fig.

10

shows

the

key,

switch,

and

encoder

input

cir-

Port

bit

0

cuits.

The

front

panel

keys

are

arranged

in

a

matrix

and

key

‘Switch\

Port

[ur

signals

are

sent

to

MPU-II,

using

a

key

scan

technique.

The

UP+DWN

|

0

0

ry

microphone

switch

lines

(PTT,

UP,

DOWN,

etc.)

are

con-

f

RES

0

0

1

nected

to

MPU-II

through

the

protection

diodes,

CR

time

DOWN

0

7

0

constant

circuit,

and

chatter

absorption

circuits.

The

CHL

To

lq

1

encoder

is

also

connected

to

MPU-II

through

the

CR

time

[up

1110

0

Constant

Circuit

and

the

inverter

of

the

Schmitt

trigger

in-

MR

1

|o

1

puts

(1C201)

for

chattering

absorption.

1

0

1 1

[_Ps2

P51

P50

Pag

lv

cK

|

COM/TOME|

VOICE/TONE

7

4

-

RIT

FUNC.

_cso_

|

res

|

CHL

FM/LS8

[3]

US8/CWTa]

REV

tS

SCAN

fg]

_M_

[o]OFFSET

To

wey

hie

R214

072)

0207

4}

0206

(22)

Kt

x

ee

‘

|

“eh”

pd|

ahd

oo

bP

P|

ee

Fig.

10

Key,

switch

and

encoder

input

circuit