NXP Semiconductors UM11653 Bedienungsanleitung

UM11653

RDGD3160I3PH5EVB Reference Design

Rev. 1 — 12 August 2021 User manual

Document information

Information Content

Keywords RDGD3160I3PH5EVB, GD3160, MPC5777C-DEVB, MPC5744P, MPC5775B/

E-EVB, S32S Design Studio SDK, FreeMASTER, AMMCL, MCAT

Abstract This document is the user guide for the RDGD3160I3PH5EVB reference

design and is intended for the engineers involved in the evaluation, design,

implementation, and validation of single-channel gate driver for IGBT,

GD3160.

NXP Semiconductors UM11653

RDGD3160I3PH5EVB Reference Design

Revision History

Rev Date Description

RDGD3160I3PH5EVB v.1 20210812 Initial version

Revision history

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NXP Semiconductors UM11653

RDGD3160I3PH5EVB Reference Design

Important notice

NXP provides the enclosed product(s) under the following conditions:

This reference design is intended for use of ENGINEERING DEVELOPMENT OR

EVALUATION PURPOSES ONLY. It is provided as a sample IC pre-soldered to a printed

circuit board to make it easier to access inputs, outputs, and supply terminals. This

reference design may be used with any development system or other source of I/O

signals by simply connecting it to the host MCU or computer board via off-the-shelf

cables. Final device in an application will be heavily dependent on proper printed circuit

board layout and heat sinking design as well as attention to supply filtering, transient

suppression, and I/O signal quality.

The goods provided may not be complete in terms of required design, marketing, and

or manufacturing related protective considerations, including product safety measures

typically found in the end product incorporating the goods. Due to the open construction

of the product, it is the user's responsibility to take any and all appropriate precautions

with regard to electrostatic discharge. In order to minimize risks associated with the

customers applications, adequate design and operating safeguards must be provided

by the customer to minimize inherent or procedural hazards. For any safety concerns,

contact NXP sales and technical support services.

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RDGD3160I3PH5EVB Reference Design

1 Introduction

This document is the user guide for the RDGD3160I3PH5EVB reference design.

This document is intended for the engineers involved in the evaluation, design,

implementation, and validation of single-channel gate driver for IGBT, GD3160.

The scope of this document is to provide the user with information to evaluate the single

channel gate driver for IGBT, GD3160. This document covers connecting the hardware,

installing the software and tools, configuring the environment and using the kit.

The RDGD3160I3PH5EVB is a fully functional three-phase inverter evaluation board

populated with six GD3160 gate drivers with fault management and supporting

circuitry. This board supports SPI daisy chain communication for programming and

communication with three high-side gate drivers and three low-side gate drivers

independently.

This board has low-voltage and high-voltage isolation in conjunction with gate drive

integrated galvanic signal isolation. Other supporting features on the board include

desaturation short-circuit detection, IGBT temperature sensing, DC Link bus voltage

monitoring, phase current sensing, and motor resolver excitation and signal processing

connection circuitry. See GD3160 data sheet for additional gate drive features.

2 Finding kit resources and information on the NXP web site

The NXP analog product development boards provide an easy-to-use platform for

evaluating NXP products. The boards support a range of analog, mixed-signal and

power solutions. They incorporate monolithic integrated circuits and system-in-package

devices that use proven high-volume technology. NXP products offer longer battery life, a

smaller form factor, reduced component counts, lower cost and improved performance in

powering state-of-the-art systems.

NXP Semiconductors provides online resources for this reference design and its

supported device(s) on http://www.nxp.com.

The information page for RDGD3160I3PH5EVB reference design is at www.nxp.com/

RDGD3160I3PH5EVB. The information page provides overview information, technical

and functional specifications, ordering information, documentation, and software.

The Get Started provides quick-reference information applicable to using the

RDGD3160I3PH5EVB reference design, including the downloadable assets.

3 Getting started

Working with the RDGD3160I3PH5EVB requires the kit contents, additional hardware,

and a Windows PC workstation with installed software.

3.1 Kit contents

•Assembled and tested RDGD3160I3PH5EVB (three-phase inverter populated with

5.0 V compatible gate driver devices) board in an anti-static bag

•Quick Start Guide

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RDGD3160I3PH5EVB Reference Design

3.2 Additional hardware

In addition to the kit contents, the following hardware is necessary or beneficial when

working with this kit.

•Microcontroller for SPI communication

•IGBT module Infineon HP Drive part FS820R08A6P2B

•DC link capacitor compatible with IGBT part FS820R08A6P2B

•HV power supply with protection shield and hearing protection

•Current sensors for monitoring each phase current

•12 V, 1.0 A DC power supply

•High sample rate digital oscilloscope with probes

•High-voltage differential voltage probe

3.3 Windows PC workstation

This reference design requires a Windows PC workstation. Meeting these minimum

specifications should produce great results when working with this reference design.

•USB-enabled computer with Windows 7 or Windows 10

3.4 Software

Installing software is necessary to work with this reference design. All listed software

is available on the reference design's information page at http://www.nxp.com/

RDGD3160I3PH5EVB.

•S32S Design Studio IDE for power architecture

•Automotive Math and Motor Control Library (AMMCL)

•FreeMaster 2.0 runtime debugging tool

•Motor Control Application Tuning (MCAT)

•GD3160 Device Driver example code REV1.2

4 Getting to know the hardware

4.1 Kit overview

4.1.1 RDGD3160I3PH5EVB features

•Capability to connect to HP Drive IGBT modules for full three-phase evaluation and

development

•Daisy chain SPI communication (three high-side and three low-side gate drivers)

•Power supply which is jumper configurable for VEE negative or GND reference

•Easy access power, ground, and signal test points

•2 × 2 32 PCIe socket for interfacing MCU control

•Note: INTA pin is a new feature added to the GD3160. Not connected to MCU

interface. See GD3160 data sheet for pin usage/features.

•Optional connection for DC bus voltage monitoring

•Compatible with MPC5777C-DEVB, MPC5775B/E-EVB, MPC5744P

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RDGD3160I3PH5EVB Reference Design

4.1.2 Voltage domains, GD3160 pinout, logic header, and IGBT pinout

Low-voltage domain is an externally supplied 12 V DC (VSUP) primary supply for non-

isolated circuits, typically supplied by vehicle battery. The low-voltage domain includes

the interface between the MCU and GD3160 control registers and logic control.

Low-side driver and high-side driver domains are isolated high-voltage driver control

domains for IGBT single phase connections and control circuits. Pins on bottom of board

are designed to easily connect to three-phase IGBT module.

Figure 1. RDGD3160I3PH5EVB three-phase inverter board voltage domains and interfaces

4.2 Featured components

4.2.1 Advanced IGBT gate driver

4.2.1.1 General description

The GD3160 is an advanced single channel gate driver for IGBTs. Integrated Galvanic

isolation and low on-resistance drive transistors provide high charging and discharging

current, low dynamic saturation voltage, and rail-to-rail gate voltage control.

Current and temperature sense minimizes IGBT stress during faults. Accurate and

configurable under voltage lockout (UVLO) provides protection while ensuring sufficient

gate drive voltage headroom.

The GD3160 autonomously manages severe faults and reports faults and status via the

INTB pin and a SPI interface. It is capable of directly driving gates of most IGBTs. Self-

test, control, and protection functions are included for design of high reliability systems

(ASIL C/D). It meets the stringent requirements of automotive applications and is fully

AEC-Q100 grade 1 qualified.

4.2.1.2 GD3160 features

•Compatible with current sense and temp sense IGBTs

•Fast short circuit protection for IGBT/SiC with DESAT and current sense feedback

•Compliant with ASIL D ISO 26262 functional safety requirements

•SPI interface for safety monitoring, programmability, and flexibility

•Integrated Galvanic signal isolation

•Integrated gate drive power stage capable of 15 A peak source and sink

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NXP Semiconductors UM11653

RDGD3160I3PH5EVB Reference Design

•Interrupt pin for fast response to faults

•Compatible with negative gate supply

•Compatible with 200 V to 1700 V IGBTs, power range > 125 kW

•AEC-Q100 grade 1 qualified

4.2.2 GD3160 pinout and MCU interface pinout

See GD3160 advanced IGBT/SiC gate driver data sheet for specific information about

pinout, pin descriptions, specifications, and operating modes.

VSUP DC supply terminal is a low voltage input connection for supplying power to the

low voltage non-isolated die and related circuitry. Typically supplied by vehicle battery

+12 V DC.

MCU connector is a 2×32-pin PCIe interface connector for use with either MPC5744P,

MPC5775B/E-EVB or MPC5777C 32-bit MCU board or any other MCU of preference. An

MCU is needed for SPI communication and control of advanced IGBT gate drive devices

(GD3160).

Figure 2. Gate driver pinout and board interface connection PCIe 2 × 32

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RDGD3160I3PH5EVB Reference Design

Pin Name Function

A1 VDDA Voltage reference resolver circuit

A2 GNDA1 Analog ground

A3 PH_U_I Current feedback phase U

A4 PH_V_I Current feedback phase V

A5 PH_W_I Current feedback phase W

A6 n.c. not connected

A7 n.c. not connected

A8 SIN_OUT_RSLV Sine resolver signal

A9 COS_OUT_RSLV Cosine resolver signal

A10 n.c. not connected

A11 GNDA4 Analog ground

A12 n.c. not connected

A13 GND2 Ground

A14 PWMHU Pulse width modulation high-side phase U

A15 PWMLU Pulse width modulation low-side phase U

A16 PWMHV Pulse width modulation high-side phase V

A17 PWMLV Pulse width modulation low-side phase V

A18 PWMHW Pulse width modulation high-side phase W

A19 PWMLW Pulse width modulation low-side phase W

A20 n.c. not connected

A21 n.c. not connected

A22 AOUTHW Analog output signal high-side phase W

A23 n.c. not connected

A24 n.c. not connected

A25 n.c. not connected

A26 INTBHU GD3160 fault reporting pin for high-side phase U

A27 INTBLU GD3160 fault reporting pin for low-side phase U

A28 INTBHV GD3160 fault reporting pin for high-side phase V

A29 INTBLV GD3160 fault reporting pin for low-side phase V

A30 CSBH Chip select bar to high gate drive devices

A31 INTBHW GD3160 fault reporting pin for high-side phase W

A32 INTBLW GD3160 fault reporting pin for low-side phase W

B1 VREF Voltage reference from MCU

B2 GNDA2 Analog ground

B3 NC not connected

B4 DCV Optional DC bus voltage monitoring (not used by default)

B5 n.c. not connected

B6 n.c. not connected

B7 n.c. not connected

B8 SIN_N_OUT_RSLV Sine resolver signal

Table 1. PCIe connector pin definitions

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RDGD3160I3PH5EVB Reference Design

Pin Name Function

B9 COS_N_OUT_RSLV Cosine resolver signal

B10 n.c. not connected

B11 GNDA3 Analog ground

B12 MCU_VCC MCU VCC regulator voltage

B13 GND1 Ground

B14 AOUTHU GD3160 analog output signal high-side U phase

B15 AOUTLU GD3160 analog output signal low-side U phase

B16 AOUTLV GD3160 analog output signal low-side V phase

B17 AOUTHV GD3160 analog output signal high-side V phase

B18 AOUTLW GD3160 analog output signal low-side W phase

B19 RES_REF Resolver reference voltage

B20 SW_RUN Signal from onboard switch demo mode

B21 MISO_MICRO SPI slave out signal

B22 MOSI_MICRO SPI slave in signal

B23 SCLK SPI clock

B24 CSBL Chip select bar to low-side gate drivers

B25 n.c. not connected

B26 n.c. not connected

B27 n.c. not connected

B28 FSENB Fail-safe state enable bar

B29 FSSTATEL Fail-safe state low-side

B30 FSSATEH Fail-safe state high-side

B31 VSUP 12 V voltage supply (low voltage domain)

B32 GNDP Ground connection (low voltage domain)

Table 1. PCIe connector pin definitions...continued

4.2.3 Test points

All test points are clearly marked on the board. The following figure shows the location of

various test points.

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RDGD3160I3PH5EVB Reference Design

Figure 3. RDGD3160I3PH5EVB test points

Test point name Function

DCV Micro DC voltage

DSTHU DESAT high-side U phase VCE desaturation connected to DESAT pin circuitry

DSTHV DESAT high-side V phase VCE desaturation connected to DESAT pin circuitry

DSTHW DESAT high-side W phase VCE desaturation connected to DESAT pin circuitry

DSTLU DESAT low-side U phase VCE desaturation connected to DESAT pin circuitry

DSTLV DESAT low-side V phase VCE desaturation connected to DESAT pin circuitry

DSTLW DESAT low-side W phase VCE desaturation connected to DESAT pin circuitry

FSISHU Not used – for test purposes only

FSISHV Not used – for test purposes only

FSISLU Not used – for test purposes only

FSISLV Not used – for test purposes only

FSISLW Not used – for test purposes only

GHU Gate high-side U phase which is the charging pin of IGBT gate

GHV Gate high-side V phase which is the charging pin of IGBT gate

GHW Gate high-side W phase which is the charging pin of IGBT gate

GLU Gate low-side U phase which is the charging pin of IGBT gate

GLV Gate low-side V phase which is the charging pin of IGBT gate

GLW Gate low-side W phase which is the charging pin of IGBT gate

NCLU – NCHW INTA test point connections to respective gate drive devices.

INTA fault reporting and real time VGE or VCE monitoring.

Resolver circuit Test points for internal signals of resolver circuit (see schematic for more information)

SPI DBG SPI signal port for analyzing SPI signals (see schematic for signals)

TSENSEHU TSENSE high-side U phase connected to NTC temperature sense

TSENSEHV TSENSE high-side V phase connected to NTC temperature sense

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