Panasonic PGA26E07BA-SWEVB008 Bedienungsanleitung

PGA26E07BA-SWEVB008 Ver. 1.2

PGA26E07BA-SWEVB008

Half Bridge Evaluation Board consisting:

1. PGA26E07BA 600V 70mΩX-GaN Power Transistor

2. AN34092B Single channel X-GaN Gate Driver IC

3. General Purpose Half Bridge Isolator

The products and product specifications described in the

document are subject to change without notice for modification

and/or improvement. At the final stage of your design,

purchasing, or use of the products, please request for the up-to-

date Product Standards in advance to ensure that the latest

specifications meet your requirements.

Panasonic Semiconductor Solutions Co. Ltd.

1 Kotari-yakemachi, Nagaokakyo, Kyoto 617-8520, Japan

http://www.semicon.panasonic.co.jp/en/

The products and product specifications described in

the document are subject to change without notice for modification

and/or improvement. At the final stage of your design, purchasing,

or use of the products, therefore, ask for the most up-to-date

Product Standards in advance to make sure that the latest

specifications satisfy your requirements.

As of March, 2017

Panasonic Industrial Devices

Sales Company of America

Two Riverfront Plaza, 7th Floor

Newark, NJ, 07102, United States

800-344-2112

[email protected]

na.industrial.panasonic.com

Panasonic

Semiconductor Solutions Co., Ltd.

1 Kotari-yakemachi, Nagaokakyo,

Kyoto 617-8520, Japan

Tel. +81-75-951-8151

http://www.semicon.panasonic.co.jp/en

 
PGA26E07BA-SWEVB008 Ver. 1.2 2 
 
Contents 
 
Features............................................................................................................................................................. 3 
Description of the Evaluation board.................................................................................................................. 4 
Recommended Operating Conditions............................................................................................................... 5 
Schematic Diagram............................................................................................................................................ 6 
- Schematic Diagram of optional parts.......................................................................................................... 7 
Bill of Materials.................................................................................................................................................. 8 
PCB Layout....................................................................................................................................................... 10 
Test circuits...................................................................................................................................................... 11 
- Slew rate test circuit.................................................................................................................................. 11 
- Switching loss test circuit .......................................................................................................................... 12 
- Dead time circuit ....................................................................................................................................... 12 
- Efficiency test circuit ................................................................................................................................. 13 
Equipment ....................................................................................................................................................... 14 
Measurement Procedures............................................................................................................................... 15 
Low Side dV/dT test......................................................................................................................................... 18 
High Side dV/dT test........................................................................................................................................ 20 
Low Side Switching Loss test ........................................................................................................................... 22 
Efficiency test .................................................................................................................................................. 24 
Thermal Profile................................................................................................................................................ 25 
Thermal Cooling............................................................................................................................................... 26 
Important Notice............................................................................................................................................. 27

PGA26E07BA-SWEVB008 Ver. 1.2 3

Features

Figure 1A: PGA26E07BA-SWEVB008 Board Photo

X-GaN Transistor

█Blocking Voltage: 600V

█Pulse Peak IDS: 61A

█IDS (cont): 26A

█RDS(on) max: 70mΩ

█Normally Off Device

X-GaN Gate Driver

█Supports high switching frequency (～4MHz)

█Achieved safe operation by negative voltage

source and active miller clamp

█Facilitate gate drive design with high

precision gate current source

Source2Source1

Source

Drain

Gate

PGA26E07BA

AN34092B

Propagation

Delay

30ns

PGA26E07BA-SWEVB008 Ver. 1.2 4

Description of the Evaluation board

PGA26E07BA-SWEVB008 Figure 1A is a complete Half bridge power circuit featuring Panasonic High

Efficiency 600V 70mΩX-GaN transistor in 8X8 SMD package and Panasonic own X-GaN driver AN34092B.

The SWEVB008 provides the flexibility to be configured easily to Buck, Boost, Half bridge and Full bridge

power circuit topology.

Shown in Figure 1A, High / Low side Isolated DCDC module provide the necessary bias of the gate drivers

IC1 and IC2. The isolation of these modules are more than 3000V. SMA2 is a connector for measuring the

VGS of the low side device QA. J1 jumper is for disconnecting the high side DCDC isolated power supply when

operating the half bridge circuit with bootstrap bias. DBS fast recovery diode and RBS provides the bootstrap

bias. IC5 is Silicon Lab 2 input half bridge isolator/general purpose driver Si8275GB. Inputs for the half bridge

isolator driver are IN_L, IN_H and EN. There is an LED mounted on the board to indicate EN input is high.

Typical Voltage for EN pin is 3.3V-5.5V. SWEVB008 can also be modified to use single input PWM

isolator/general purpose driver e.g. Si8274GB.

The evaluation board offers a general platform for testing and developing power circuits using high efficiency

X-GaN in half bridge or full bridge configuration. Figure 1B shows the basic block diagram of this board. The

power loop is made up of QB and QA (GaN-Tr devices), C2, C3, C1 and RS. C2 and C3 are high frequency

bypass capacitors. C1 is the DC link capacitor. RS 47mΩ resistor is use for measuring the IDS flowing through

QA device. X-GaN drivers IC1 and IC2 provides the correct driving voltage and precise current to safely drive

the output transistors QB and QA.

Figure 1B: Block diagram

PGA26E07BA-SWEVB008 Ver. 1.2 5

Recommended Operating Conditions

Table 1 shows the operating conditions used to achieve the switching performance reported in this evaluation

manual. All the components used in the evaluation board are rated for the recommended operating conditions

only.

Please read the measurement procedure before starting the evaluation. It is necessary to refer to the X-GaN

transistor and X-GaN driver datasheet when using this user’s guide. The detailed operation of the gate driver

IC and the design of its peripheral components are described in the OPERATION section of the datasheet.

Table 1: Recommended operating conditions

Parameter

Condition

Input voltage (DC Power ①)

100V-400V

Maximum Rated Power *

800W

Driver IC power supply voltage (DC Power ③)

12V

Driver IC power supply for input stage and External clock

voltage (DC Power ②)

3.3-5.5V

External clock

(pulse generator input) dV/dT Tests

Double pulse

External clock frequency (Duty Cycle)

(pulse generator input) Continuous Pulse Tests

50kHz-200kHz (20%-80%)

External inductor

100uH-360uH @ DC Current>18A

Room Temperature

25ºC

①②③ Power supply equipment number as illustrated in page 18, 20 and 22

* Using attached heatsink

PGA26E07BA-SWEVB008 Ver. 1.2 6

Schematic Diagram

Refer to Figure 2 and 3 below for the circuit schematic of the evaluation board.

Figure 2: SWEVB008 Schematic

* Not populated

PGA26E07BA-SWEVB008 Ver. 1.2 7

- Schematic Diagram of optional parts

Figure 3: Schematic for optional isolated DCDC power supply and Optoisolator

PGA26E07BA-SWEVB008 Ver. 1.2 8

Bill of Materials Table 2: Bill of Materials

Parts

Symbol

Specification

Part Number

Manufacturer

Package

Chip

Resistor

RA1,RB1

15Ω

ERJ-6ENF15R0V

Panasonic

SMD2012

RA2, RB2

0Ω

ERJ-6GEY0R00V

Panasonic

SMD2012

RA3,RB3

1Ω

ERJ-6ENF1R0V

Panasonic

SMD2012

RA4,RB4

N.M.

SMD1608

RA5,RB5

39kΩ

ERJ-3GEYJ393V

Panasonic

SMD1608

RA6,RB6

Bleeder Resistor

SMD1608

RA7,RB7

0Ω

ERJ-3GEY0R00V

Panasonic

SMD1608

RA8,RB8

51Ω

ERJ-3GEYJ510V

Panasonic

SMD2012

RA9,RB9

3kΩ

N.M.

SMD2012

RBS

Bootstrap resistor

SMD3216

RLED

1.8 kΩ

ERJ-3GEYJ182V

Panasonic

SMD1608

RLO/RHI

10kΩ

ERJ-3GEYJ103V

Panasonic

SMD1608

Chip

Capacitor

5uF/630V

B32674D6505K000

TDK

Axial

C2,C3

0.1uF/1000V

GRM55DR72J104KW90L

Murata

SMD5750

4.7uF/10V

GRM21BR71A475KA73K

Murata

SMD2012

0.1uF/50V

GRM155R61H104KE14D

Murata

SMD1608

CA1,CB1

2.2uF/25V

GRM31MR71E225KA93L

Murata

SMD3216

CA2,CB2

2.2uF/25V

GRM31MR71E225KA93L

Murata

SMD2012

CA3,CB3

2.2nF/50V

GRM2165C1H222JA01D

Murata

SMD2012

CA4,CB4

0.22uF/25V

GRM155R61E224KE01D

Murata

SMD1608

CA5,CB5

0.47uF/25V

GRM188R71E474KA12D

Murata

SMD1608

CA6,CB6

4.7uF/16V

GRM21BR71C475KA73L

Murata

SMD1608

CA7,CB7

1uF/16V

GRM21BR71C105KA01L

Murata

SMD1608

CA8,CB8

4.7uF/25V

GRM21BR71E475KA73L

Murata

SMD2012

CA9,CB9

100pF/50V

GRM0335C1H101GA01D

Murata

SMD1608

CA10,CB10

N.M.

SMD1608

CA11,CB11

10uF/25V

GRM32DR71E106KA12L

Murata

SMD3216

CA12,CB12

47pF/50V

GRM0335C1H470JA01D

Murata

SMD1608

CA14,CB14

22uF/25V

GRM32ER71E226KE15L

Murata

SMD3225

**RA6 and RB6 are bleeder resistors but a 0.1uF/50V decoupling cap is mounted instead

PGA26E07BA-SWEVB008 Ver. 1.2 9

- Bill of Materials continued

Parts

Symbol

Specification

Part Number

Manufacturer

Package

Shunt resistor

47mΩ

RL7520WT-R047-F

SUSUMU

SMD3008

Rectifier Diode

DBS

600V / 1A

ES1J

Fairchild

DO-214AC

LED

Gen purpose

SMD LED

LNJ826W86RA

Panasonic

SMD

Screw Terminal

VPN,VS,

8174

Keystone

Thru Hole

Terminal Block

CN1

1727052

Phoenix Contact

Pitch: 3.81mm

Terminal Block

CN2,CN3

1727010

Phoenix Contact

Pitch: 3.54mm

SMA connector

Semi-rigid

SMA(PJ)－X-UT47-63

APEX

Technology

SMA connector

SMA2

19-46-2-TGG

Multicomp

SMD

Isolated DCDC

IC6,IC7

12Vin / 12Vout

MEJ2S1212SC

R12P212S

Murata

SIP(7)

Isolator

IC5

2 Input Half

bridge iso/driver

Si8275GB

SiLab

SOIC-16

GaN Transistor

QA,QB

600V / 70 mΩ

PGA26E07BA

Panasonic

SMD (8mm x

8mm)

Gate Driver

IC1,IC2

gate driver

AN34092B

Panasonic

QFN16

Table 3: Additional Parts use if Si8274 Isolator is used (single input version of SWEVB008)

Parts

Symbol

Specification

Part Number

Manufacturer

Package

Chip Resistor

RDT

51kΩ

ERJ-3GEYJ513V

Panasonic

SMD1608

0Ω

ERJ-3GEY0R00V

Panasonic

SMD1608

Chip Capacitor

100pF/50V

GRM0335C1H101GA01D

Murata

SMD1608

Inverter

IC8

Single inverter

SN74LVC1G04

SOT-23

Isolator

IC5

1 Input Half

bridge

iso/driver

Si8274GB

SiLab

SOIC-16

PGA26E07BA-SWEVB008 Ver. 1.2 10

PCB Layout

PCB Specifications:

Double-sided

Size: 82mm × 122mm

Copper thickness: 70um

Board thickness: 1.6mm

Figure 4: Top and Bottom PCB Layout

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