Philips BLF278 - Bedienungsanleitung

DATA SHEET

Product Speciﬁcation

Supersedes data of 1996 Oct 21 2003 Sep 19

DISCRETE SEMICONDUCTORS

BLF278

VHF push-pull power MOS

transistor

M3D091

2003 Sep 19 2

Philips Semiconductors Product Speciﬁcation

VHF push-pull power MOS transistor BLF278

FEATURES

•High power gain

•Easy power control

•Good thermal stability

•Gold metallization ensures excellent reliability.

APPLICATIONS

•Broadcast transmitters in the VHF frequency range.

DESCRIPTION

Dual push-pull silicon N-channel enhancement mode

vertical D-MOS transistor encapsulated in a 4-lead,

SOT262A1 balanced flange package with two ceramic

caps. The mounting flange provides the common source

connection for the transistors.

PINNING - SOT262A1

CAUTION

This product is supplied in anti-static packing to prevent

damage caused by electrostatic discharge during

transport and handling. For further information, refer to

Philips specs.: SNW-EQ-608, SNW-FQ-302A, and

SNW-FQ-302B.

PIN DESCRIPTION

1 drain 1

2 drain 2

3 gate 1

4 gate 2

5 source

Fig.1 Simplified outline and symbol.

MAM098

Top view

QUICK REFERENCE DATA

RF performance at Th=25°C in a push-pull common source test circuit.

MODE OF OPERATION f

(MHz) VDS

(V) PL

(W) Gp

(dB) ηD

(%)

CW, class-B 108 50 300 >20 >60

CW, class-C 108 50 300 typ. 18 typ. 80

CW, class-AB 225 50 250 >14

typ. 16 >50

typ. 55

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO discs are not damaged.

All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety

precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of

the user. It must never be thrown out with the general or domestic waste.

2003 Sep 19 3

Philips Semiconductors Product Speciﬁcation

VHF push-pull power MOS transistor BLF278

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 60134).

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

Per transistor section

VDS drain-source voltage −125 V

VGS gate-source voltage −±20 V

IDdrain current (DC) −18 A

Ptot total power dissipation Tmb ≤25 °C; total device; both

sections equally loaded −500 W

Tstg storage temperature −65 150 °C

Tjjunction temperature −200 °C

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-mb thermal resistance from junction

to mounting base total device; both sections

equally loaded. max. 0.35 K/W

Rth mb-h thermal resistance from

mounting base to heatsink total device; both sections

equally loaded. max. 0.15 K/W

Fig.2 DC SOAR.

Total device; both sections equally loaded.

(1) Current is this area may be limited by RDSon.

(2) Tmb =25°C.

handbook, halfpage

100

1 10 100

(1)

500

(A)

V (V)

MRA988

(2)

Fig.3 Power derating curves.

Total device; both sections equally loaded.

(1) Continuous operation.

(2) Short-time operation during mismatch.

handbook, halfpage

0 40 80 160

500

400

MGE616

120

300

200

100

Ptot

(W)

Th (°C)

(2)

(1)

2003 Sep 19 4

Philips Semiconductors Product Speciﬁcation

VHF push-pull power MOS transistor BLF278

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

Per transistor section

V(BR)DSS drain-source breakdown voltage VGS = 0; ID= 100 mA 125 −−V

DSS drain-source leakage current VGS = 0; VDS =50V −−2.5 mA

IGSS gate-source leakage current VGS =±20 V; VDS =0 −−1µA

GSth gate-source threshold voltage VDS = 10 V; ID=50mA 2 −4.5 V

∆VGS gate-source voltage difference

of both sections VDS = 10 V; ID=50mA −−100 mV

gfs forward transconductance VDS = 10 V; ID= 5 A 4.5 6.2 −S

gfs1/gfs2 forward transconductance ratio

of both sections VDS = 10 V; ID=5A 0.9 −1.1

RDSon drain-source on-state resistance VGS = 10 V; ID=5A −0.2 0.3 Ω

IDSX drain cut-off current VGS = 10 V; VDS =10V −25 −A

Cis input capacitance VGS = 0; VDS = 50 V; f = 1 MHz −480 −pF

Cos output capacitance VGS = 0; VDS = 50 V; f = 1 MHz −190 −pF

Crs feedback capacitance VGS = 0; VDS = 50 V; f = 1 MHz −14 −pF

Cd-f drain-ﬂange capacitance −5.4 −pF

VGS group indicator

GROUP LIMITS

(V) GROUP LIMITS

(V)

MIN. MAX. MIN. MAX.

A 2.0 2.1 O 3.3 3.4

B 2.1 2.2 P 3.4 3.5

C 2.2 2.3 Q 3.5 3.6

D 2.3 2.4 R 3.6 3.7

E 2.4 2.5 S 3.7 3.8

F 2.5 2.6 T 3.8 3.9

G 2.6 2.7 U 3.9 4.0

H 2.7 2.8 V 4.0 4.1

J 2.8 2.9 W 4.1 4.2

K 2.9 3.0 X 4.2 4.3

L 3.0 3.1 Y 4.3 4.4

M 3.1 3.2 Z 4.4 4.5

N 3.2 3.3

2003 Sep 19 5

Philips Semiconductors Product Speciﬁcation

VHF push-pull power MOS transistor BLF278

Fig.4 Temperature coefficient of gate-source

voltageasafunctionofdraincurrent;typical

values per section.

VDS =10V.

handbook, halfpage

−5

10−210−1

MGE623

110

−4

−3

−2

−1

T.C.

(mV/K)

ID (A)

Fig.5 Drain current as a function of gate-source

voltage; typical values per section.

VDS = 10 V; Tj=25°C.

handbook, halfpage

(A)

10 VGS (V) 15

MGE622

Fig.6 Drain-source on-state resistance as a

function of junction temperature; typical

values per section.

VGS = 10 V; ID=5A.

handbook, halfpage

0 50 100 150

400

200

100

300

MGE621

RDSon

(mΩ)

Tj(°C)

Fig.7 Input and output capacitance as functions

of drain-source voltage; typical values per

section.

VGS = 0; f = 1 MHz.

handbook, halfpage

1200

800

400

020

(pF)

40 VDS (V) 60

MGE615

Cos

Cis

2003 Sep 19 6

Philips Semiconductors Product Speciﬁcation

VHF push-pull power MOS transistor BLF278

Fig.8 Feedback capacitance as a function of

drain-source voltage; typical values per

section.

VGS = 0; f = 1 MHz.

handbook, halfpage

010 50

400

300

100

200

MGE620

20 30 40

Crs

(pF)

VDS (V)

APPLICATION INFORMATION

Class-B operation

RF performance in CW operation in a common source push-pull test circuit. Th=25°C; Rth mb-h = 0.15 K/W unless

otherwise speciﬁed. RGS =4Ωper section; optimum load impedance per section = 3.2 + j4.3 Ω(VDS = 50 V).

Ruggedness in class-B operation

The BLF278 is capable of withstanding a load mismatch corresponding to VSWR = 7:1 through all phases under the

following conditions: VDS = 50 V; f = 108 MHz at rated load power.

MODE OF OPERATION f

(MHz) VDS

(V) IDQ

(A) PL

(W) Gp

(dB) ηD

(%)

CW, class-B 108 50 2 ×0.1 300 >20

typ. 22 >60

typ. 70

CW, class-C 108 50 VGS = 0 300 typ. 18 typ. 80

2003 Sep 19 7

Philips Semiconductors Product Speciﬁcation

VHF push-pull power MOS transistor BLF278

Fig.9 Power gain as a function of load power;

typical values.

Class-B operation; VDS =50V;I

DQ =2×0.1 A; f = 108 MHz;

ZL= 3.2 + j4.3 Ω(per section); RGS =4Ω(per section).

(1) Th=25°C.

(2) Th=70°C.

handbook, halfpage

0200 400 600

MGE682

PL(W)

(dB) (1)

(2)

Fig.10 Efficiency as a function of load power;

typical values.

Class-B operation; VDS =50V;I

DQ =2×0.1 A; f = 108 MHz;

ZL= 3.2 + j4.3 Ω(per section); RGS =4Ω(per section).

(1) Th=25°C.

(2) Th=70°C.

handbook, halfpage

0 200 400 PL (W) 600

ηD

(%)

MGE683

(1)

(2)

Fig.11 Load power as a function of input power;

typical values.

Class-B operation; VDS =50V;I

DQ =2×0.1 A; f = 108 MHz;

ZL= 3.2 + j4.3 Ω(per section); RGS =4Ω(per section).

(1) Th=25°C.

(2) Th=70°C.

handbook, halfpage

600

400

200

051015

MGE684

Pi(W)

(W)

(1)

(2)

2003 Sep 19 8

Philips Semiconductors Product Speciﬁcation

VHF push-pull power MOS transistor BLF278

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Fig.12 Class-B test circuit at f = 108 MHz.

handbook, full pagewidth

MGE688

R11 IC1

C36 C37 C11

C35

L14 L18 L20

C14

C15

C10

C2 C6 C7 C27 C28

C26 C29 C30

C33

C31 L21

L22

L23

L19L17L13

D.U.T.

C32

C34

R10

L3 L5 L7

50 Ω

input

50 Ω

output

L4 L6 L8

C8 C12

C13

C20

C16 C21

C22

L11R8

L12

C17

+VDD1

,,,,

+VDD1

L10

C18

C19

R9 L16

C24

C25

C23

L15

+VDD2

2003 Sep 19 9

Philips Semiconductors Product Speciﬁcation

VHF push-pull power MOS transistor BLF278

List of components (see Figs 12 and 13).

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

C1, C2, C33, C34 multilayer ceramic chip capacitor;

note 1 22 pF, 500 V

C3, C4 multilayer ceramic chip capacitor;

note 1 100pF+68pF

in parallel, 500 V

C5, C6, C28 ﬁlm dielectric trimmer 5 to 60 pF 2222 809 08003

C7 multilayer ceramic chip capacitor;

note 1 2×100 pF +

1×120 pF in

parallel, 500 V

C8, C11, C12,

C15, C16, C19,

C36

multilayer ceramic chip capacitor 100 nF, 500 V 2222 852 47104

C9, C10, C13,

C14, C20, C25 multilayer ceramic chip capacitor;

note 1 1 nF, 500 V

C17, C18, C22,

C23 multilayer ceramic chip capacitor;

note 1 470 pF, 500 V

C21, C24, C35 electrolytic capacitor 10 µF, 63 V

C26 multilayer ceramic chip capacitor;

note 1 2×15 pF +

1×18 pF in

parallel, 500 V

C27 multilayer ceramic chip capacitor;

note 1 3×15 pF in

parallel, 500 V

C29 multilayer ceramic chip capacitor;

note 1 2×18 pF +

1×15 pF in

parallel, 500 V

C30 ﬁlm dielectric trimmer 2 to 18 pF 2222 809 09006

C31, C32 multilayer ceramic chip capacitor;

note 1 3×43 pF in

parallel, 500 V

L1, L2 stripline; note 2 43 Ωlength 57.5 mm

width 6 mm

L3, L4 stripline; note 2 43 Ωlength 29.5 mm

width 6 mm

L5, L6 stripline; note 2 43 Ωlength 14 mm

width 6 mm

L7, L8 stripline; note 2 43 Ωlength 6 mm

width 6 mm

L9, L10 stripline; note 2 43 Ωlength 17.5 mm

width 6 mm

L11, L16 2 ×grade 3B Ferroxcube wideband

HF chokes in parallel 4312 020 36642

L12, L15 4 turns enamelled 2 mm copper wire 85 nH length 13.5 mm

int. dia. 10 mm

leads 2 ×7mm

L13, L14 stripline; note 2 43 Ωlength 19.5 mm

width 6 mm

2003 Sep 19 10

Philips Semiconductors Product Speciﬁcation

VHF push-pull power MOS transistor BLF278

Notes

1. American Technical Ceramics capacitor, type 100B or capacitor of same quality.

2. L1 to L10, L13, L14, L17 to L21 and L23 are striplines on a double copper-clad printed-circuit board, with fibre-glass

PTFE dielectric (εr= 2.2), thickness 1⁄16 inch; thickness of copper sheet 2 ×35 µm.

3. L22 is soldered on to stripline L21.

L17, L18 stripline; note 2 43 Ωlength 24.5 mm

width 6 mm

L19, L20 stripline; note 2 43 Ωlength 66 mm

width 6 mm

L21, L23 stripline; note 2 50 Ωlength 160 mm

width 4.8 mm

L22 semi-rigid cable; note 3 50 Ωext. dia. 3.6 mm

outer conductor

length 160 mm

R1 metal ﬁlm resistor 10 Ω, 0.4 W

R2, R7 10 turn potentiometer 50 kΩ

R3, R6 metal ﬁlm resistor 3 ×12.1 Ωin

parallel, 0.4 W

R4, R5 metal ﬁlm resistor 10 Ω; 0.4 W

R8, R9 metal ﬁlm resistor 10 Ω±5%, 1 W

R10 metal ﬁlm resistor 4 ×10 Ωin

parallel, 1 W

R11 metal ﬁlm resistor 5.11 kΩ, 1W

IC1 voltage regulator 78L05

T1 1:1 Balun; 7 turns type 4C6 50 Ω

coaxial cable wound around toroid 14 ×9×5 mm 4322 020 90770

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

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