Philips SA631 Bedienungsanleitung

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SA631

1GHz low voltage LNA and mixer

Product specification

IC17 Data Handbook

1998 Jan 08

INTEGRATED CIRCUITS

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

1998 Jan 08 853–2045 18847

DESCRIPTION

The SA631 is a combined low-noise BiCMOS amplifier, and mixer

designed for high-performance low-power communication systems

from 800-1000MHz. The low-noise preamplifier has a 1.7dB noise

figure at 881MHz with 15dB gain and an IP3 intercept of –7dBm at

the input. The gain is stabilized by on-chip compensation to vary

less than ±0.2dB over –40 to +85°C temperature range. The

wide-dynamic-range mixer has a 10dB noise figure and IP3 of

+3.3dBm at the input at 881MHz. The nominal current drawn from a

single 3V supply is 8.3mA. Additionally, the entire circuit can be

powered down to further reduce the supply current to less than

20µA.

FEATURES

•Low current consumption

•Outstanding gain and noise figure

•Excellent gain stability versus temperature and supply voltage

•LNA and mixer power down capability

•Designed in Philips state of the art BiCMOS QUBIC process

APPLICATIONS

•900MHz cellular and cordless front-end

•Spread spectrum receivers

•RF data links

•UHF frequency conversion

•Portable radio

PIN CONFIGURATION

10 11

GND

LNA OUT

VCC

LNA IN

GND

MIXER IN

MIXER OUT

GND

LO OUT

PD2

PD1

GND

SR00124

Figure 1. Pin Configuration

ORDERING INFORMATION

DESCRIPTION TEMPERATURE RANGE ORDER CODE DWG #

20-Pin Shrink Small Outline Package (Surface-mount, SSOP) –40 to +85°CSA631DK SOT266-1

BLOCK DIAGRAM

43215

20 19 18 17 16

761098

15 14 13 12 11

LO GND GND

GND VCC

LNA

IN GND

MIXER

OUT

MIXER

OUT

PD1 PD2 GND

LNA

OUT

GND

OUT

GND

LNA

GND

GND GND

SR01588

Figure 2. SA631 Block Diagram

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

1998 Jan 08 3

ABSOLUTE MAXIMUM RATINGS

SYMBOL PARAMETER RATING UNITS

VCC Supply voltage1–0.3 to +6 V

VIN Voltage applied to any other pin –0.3 to (VCC + 0.3) V

PDPower dissipation, Tamb = 25°C (still air)2

20-Pin Plastic SSOP 980 mW

TJMAX Maximum operating junction temperature 150 °C

PMAX Maximum power input/output +20 dBm

TSTG Storage temperature range –65 to +150 °C

NOTES:

1. Transients exceeding 8V on VCC pin may damage product.

2. Maximum dissipation is determined by the operating ambient temperature and the thermal resistance,

θJA: 20-Pin SSOP = 110°C/W

3. Pins 19 and 20 are ESD sensitive (mixer outputs).

RECOMMENDED OPERATING CONDITIONS

SYMBOL PARAMETER RATING UNITS

VCC Supply voltage 2.7 to 5.5 V

Tamb Operating ambient temperature range –40 to +85 °C

TJOperating junction temperature –40 to +105 °C

DC ELECTRICAL CHARACTERISTICS

VCC = +3.0V, Tamb = 25°C; unless otherwise stated.

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNITS

SYMBOL

PARAMETER

TEST

CONDITIONS

MIN TYP MAX

UNITS

Full power-on 8.3 mA

ICC Supply current LNA powered-down 5.2 mA

Full power-down 20 µA

VTPD logic threshold voltage 1.2 1.6 1.8 V

VIH Logic 1 level 2.0 VCC V

VIL Logic 0 level –0.3 0.8 V

IIL PD1 input current Enable = 0.4V 10 µA

IIH PD2 input current Enable = 2.4V 10 µA

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

1998 Jan 08 4

AC ELECTRICAL CHARACTERISTICS

VCC = +3.0V, Tamb = 25°C; RFIN = 881MHz, fVCO = 964MHz; unless otherwise stated.

SYMBOL

PARAMETER

TEST CONDITIONS

LIMITS

UNITS

SYMBOL

PARAMETER

TEST

CONDITIONS

–3TYP +3

UNITS

Low Noise Amplifier

fRF RF input frequency range 800 1000 MHz

S21 Amplifier gain 15 dB

S21 Amplifier gain in power-down mode –28 dB

∆S21/∆TGain temperature sensitivity enabled 0.006 dB/°C

∆S21/∆fGain frequency variation 800MHz - 1.0GHz ±0.013 dB/MHz

S12 Amplifier reverse isolation @ 881 MHz –28 dB

S11 Amplifier input match With ext. impedance matching –10 dB

S22 Amplifier output match –10 dB

P-1dB Amplifier input 1dB gain compression –20 dBm

IP3 Amplifier input third order intercept –7 dBm

NF Amplifier noise figure 1.7 dB

tON Amplifier turn-on time (Enable Lo →Hi) 120 µs

tOFF Amplifier turn-off time (Enable Hi →Lo) 0.3 µs

Mixer

PGCMixer power conversion gain: RP= RL= 1.2kΩfRF = 881MHz, fLO = 964MHz,

fIF = 83MHz 9.6 dB

S11M Mixer input match Ext. impedance matching req. –10 dB

NFMMixer SSB noise figure 10 dB

P-1dB Mixer input 1dB gain compression –14.5 dBm

IP3MMixer input third order intercept 3.3 dBm

IP2INT Mixer input second order intercept 38 dBm

PRFM-IF Mixer RF feedthrough RFIN = –32dBm –45 dBm

PLO-IF LO feedthrough to IF LO = –0dBm –23 dBm

PLO-RFM LO to mixer input feedthrough –32 dBm

PLO-RF LO to LNA input feedthrough –42 dBm

Overall System

GSYS System gain LNA + Mixer 23.9 24.6 25.3 dB

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

1998 Jan 08 5

Table 1. Power ON/OFF Control Logic

PD1 PD2

0 0 Full chip power-down

01 or open Mixer on, LNA power-down

1 or open 0Standby (bias on)

1 or open 1 or open Full chip power-on (default)

SR01589

–

20 19 18 17 16 15 14 13 12 11

1234 5678910

PD1 PD2 GND GND GND GND GND GND GND

MIXER GND GND GND GND

VCC

LOOUT

IFOUT

VCOOUT

SA631

6.8pF L4

560n

C15 10nF

C14

6.8pF C13

33pF

10nF 3V

C12

100pF

VCC

OUT MIXER

IN LNA

OUT

6.8nH

10nF

0.1µF

C11

12nH

C10

2.2pF

10pF

C16

10pF

560nH

Figure 3. SA631 Application Circuit

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

1998 Jan 08 6

PERFORMANCE CHARACTERISTICS

85°C25°C

–15

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

LNA 1dB (dBm)

–40°C

25°C

LNA 1dB Compression vs VCC

–16

–17

–18

–19

–20

–21

–22

–23

–24

–25

-14.0

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

MIXER 1dB (dBm)

-40°C

Mixer 1dB Compression vs VCC

-14.5

-15.0

-15.5

-16.0

-13.0

-13.5

-28.0

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

LNA GAIN (dB)

-40°C

25°C

85°C

LNA Gain (Disabled) vs VCC

-28.5

-29.0

-29.5

-30.0

-30.5

-31.0

-27.0

-27.5

6.0

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

MIXER IP3 (dBm)

-40°C

25°C

85°C

Mixer IP3 vs VCC

5.0

4.0

3.0

2.0

1.0

0.0

–1.0

–2.0

-11

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

LNA IP3 (dBm)

–40°C

25°C

LNA IP3 vs VCC

-2

-3

-4

-5

-6

-7

-8

-9

-10

85°C

SR01590

-12

–3.0

–4.0

Figure 4.

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

1998 Jan 08 7

PERFORMANCE CHARACTERISTICS

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

Icc (mA)

-40°C

25°C

85°C

ICC vs VCC and Temperature

8.2

7.8

7.4

7.0

6.6

6.2

5.8

9.8

9.4

9.0

8.6

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

MIXER GAIN (dB)

-40°C

85°C

Mixer Power Gain vs VCC

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

LO to LNA IN (dBm)

-40°C

25°C

85°C

LO to LNA In Feedthrough vs VCC

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

LO to MIXER IN (dBm)

-40°C

LO to Mixer In Feedthrough vs VCC

–39

–40

–41

–42

–43

–44

–45

–46

–47

–48

–49

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

LO to IF (dBm)

-40°C

25°C

85°C

LO to IF Feedthrough vs VCC

–20

–21

–22

–23

–24

–25

–26

–27

–28

–29

–30

SR01591

11.0

10.5

10.0

9.5

9.0

8.5

8.0

7.5

7.0

6.5

6.0

25°C

–28.0

–30.0

–32.0

–34.0

–36.0

–38.0

–40.0

–42.0

25°C

85°C

Figure 5.

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

1998 Jan 08 8

PERFORMANCE CHARACTERISTICS

–40°C

85°C

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

MIXER IN to IF (dBm)

–40°C

25°C

85°C

Mixer In to IF Feedthrough vs VCC

15.0

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

LNA GAIN (dB)

–40°C

25°C

85°C

LNA Gain (Enabled) vs VCC

14.8

14.6

14.4

14.2

14.0

13.8

13.6

15.6

15.4

15.2

2.5 3 3.5 4 4.5 5 5.5

VCC (V)

MIXER NOISE FIGURE (dB)

–40°C

25°C

Mixer Noise Figure vs VCC

11.0

10.8

10.6

10.4

10.2

10.0

9.8

9.6

9.4

9.2

9.0 2.5 3 3.5 4 4.5 5 5.5

VCC (V)

LNA NOISE FIGURE (dB)

25°C

85°C

LNA Noise Figure vs VCC

2.0

1.9

1.8

1.7

1.6

1.5

1.4

1.3

1.2

1.1

1.0

SR01592

–42.0

–43.0

–44.0

–45.0

–46.0

–47.0

–48.0

Figure 6.

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

1998 Jan 08 9

CH2 S11 1 U FS

1: 40.1 Ω

-129.6 Ω

200 MHz

2: 24.0 Ω

-62.9 Ω

400 MHz

3: 18.6 Ω

-37.4 Ω

600 MHz

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

SR01593

4: 14.1 Ω

10.5 pF

-16.7 Ω

900 MHz

Figure 7. Typical S11 of LNA at 3V

CH1 S22 1 U FS

1: 40.5 Ω

-28.2 Ω

700 MHz

2: 36.1 Ω

-12.4 Ω

800 MHz

3: 34.7 Ω

3.5 Ω

900 MHz

START 700. 000 000 MHz STOP 1 200. 000 000 MHz

SR01253

4: 34.9 Ω

3.74 Ω

661.4 pH

900 MHz

Figure 8. Typical S22 of LNA at 3V

Philips Semiconductors Product specification

SA6311GHz low voltage LNA and mixer

1998 Jan 08 10

CH1 S21 10 U FS

1: 6.7 U

142.5 °

200 MHz

2: 5.9 U

112.3 °

400 MHz

3: 5.9 U

78.1 °

600 MHz

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

SR01254

4: 4.5 U

21.2°

900 MHz

Figure 9. Typical S21 of LNA at 3V

CH2 S12 50 mU FS

1: 1.9 mU

83.0 °

200 MHz

2: 1.6 mU

133.5 °

400 MHz

3: 11.4 mU

141.5 °

600 MHz

START 100. 000 000 MHz STOP 1 200. 000 000 MHz

SR01255

14: 27.9 mU

106.1°

900 MHz

Figure 10. Typical S12 of LNA at 3V

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