Philips CBTD3306 Betriebshandbuch

1. General description

The CBTD3306 dual FET bus switch features independent line switches. Each switch is

disabled when the associated output enable (nOE) input is HIGH.

The CBTD3306 is characterized for operation from −40 °C to +85 °C.

2. Features and benefits

Designed to be used in 5 V to 3.3 V level shifting applications with internal diode

5Ωswitch connection between two ports

TTL-compatible input levels

Multiple package options

Latch-up protection exceeds 100 mA per JESD78B

ESD protection:

HBM JESD22-A114F exceeds 2000 V

CDM JESD22-C101E exceeds 1000 V

3. Ordering information

4. Marking

CBTD3306

Dual bus switch with level shifting

Rev. 8 — 1 May 2012 Product data sheet

Table 1. Ordering information

Type number Package

Name Description Version

CBTD3306D SO8 plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

CBTD3306PW TSSOP8 plastic thin shrink small outline package; 8 leads;

body width 4.4 mm SOT530-1

CBTD3306GT XSON8 plastic extremely thin small outline package; no leads; 8 terminals;

body 1 ×1.95 ×0.5 mm SOT833-1

CBTD3306GM XQFN8 plastic, extremely thin quad flat package; no leads; 8 terminals;

body 1.6 ×1.6 ×0.5 mm SOT902-2

Table 2. Marking codes

Type number Marking code

CBTD3306D CBD3306

CBTD3306PW D306

CBTD3306GT W06

CBTD3306GM W06

Product data sheet Rev. 8 — 1 May 2012 2 of 17

NXP Semiconductors CBTD3306

Dual bus switch with level shifting

5. Functional diagram

6. Pinning information

6.1 Pinning

Fig 1. Logic diagram

1OE

1A 1B

002aab985

2OE

Fig 2. Pin configuration for SO8 (SOT96-1) Fig 3. Pin configuration for TSSOP8 (SOT530-1)

CBTD3306

1OE V

1A 2OE

1B 2B

GND 2A

001aak832

CBTD3306

1OE V

1A 2OE

1B 2B

GND 2A

001aak833

Fig 4. Pin configuration SOT833-1 (XSON8) Fig 5. Pin configuration SOT902-2 (XQFN8)

CBTD3306

2OE

1OE

GND

001aal404

Transparent top view

001aal405

2B1A

2OE

1OE

GND

Transparent top view

terminal 1

index area

CBTD3306

Product data sheet Rev. 8 — 1 May 2012 3 of 17

NXP Semiconductors CBTD3306

Dual bus switch with level shifting

6.2 Pin description

7. Functional description

[1] H = HIGH voltage level; L = LOW voltage level; Z = high-impedance OFF-state.

8. Limiting values

[1] Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the

device at these or any other conditions beyond those indicated under Section 9. is not implied. Exposure to absolute-maximum-rated

conditions for extended periods may affect device reliability.

[2] The input and output negative-voltage ratings may be exceeded if the input and output clamp-current ratings are observed.

9. Recommended operating conditions

Table 3. Pin description

Symbol Pin Description

1OE, 2OE 1, 7 output enable input

1A, 2A 2, 5 data input/output (A port)

1B, 2B 3, 6 data input/output (B port)

GND 4 ground (0 V)

VCC 8 positive supply voltage

Table 4. Function selection[1]

Input Input/output

nOE nA, nB

LnA=nB

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).[1]

Tamb =

−

C to +85

C, unless otherwise specified.

Symbol Parameter Conditions Min Max Unit

VCC supply voltage −0.5 +7.0 V

VIinput voltage [2] −0.5 +7.0 V

ISW switch current - 128 mA

IIK input clamping current VI/O =0V −50 - mA

Tstg storage temperature −65 +150 °C

Table 6. Operating conditions

All unused control inputs of the device must be held at VCC or GND to ensure proper device operation.

Symbol Parameter Conditions Min Typ Max Unit

VCC supply voltage 4.5 - 5.5 V

VIH HIGH-level input voltage 2.0 - - V

VIL LOW-level input voltage - - 0.8 V

Tamb ambient temperature operating in free air −40 - +85 °C

Product data sheet Rev. 8 — 1 May 2012 4 of 17

NXP Semiconductors CBTD3306

Dual bus switch with level shifting

10. Static characteristics

[1] All typical values are at VCC =5V,T

amb =25°C.

[2] This is the increase in supply current for each input that is at the specified TTL voltage level rather than VCC or GND.

[3] Measured by the voltage drop between the nA and the nB terminals at the indicated current through the switch. ON resistance is

determined by the lowest voltage of the two (nA or nB) terminals.

Table 7. Static characteristics

Voltages are referenced to GND (ground = 0 V).

Symbol Parameter Conditions Tamb = −40 °C to +85 °CUnit

Min Typ[1] Max

VIK input clamping voltage VCC =4.5V;I

I=−18 mA - - −1.2 V

IIinput leakage current VCC =5.5V;V

I= GND or 5.5 V - - ±1μA

ICC supply current VCC =5.5V;I

SW =0mA;

VI=V

CC or GND --1.5mA

Vpass pass voltage see Figure 6 to Figure 10 ---V

ΔICC additional supply current per input pin; VCC =5.5V;

one input at 3.4 V, other inputs at

VCC or GND

[2] --2.5mA

CIinput capacitance control pin; VI= 3 V or 0 V - 3.2 - pF

Cio(off) off-state input/output

capacitance port off; VI= 3 V or 0 V; nOE =V

CC -6.5-pF

RON ON resistance VCC =4.5V;V

I=0V;I

I=64mA [3] -3.65Ω

VCC =4.5V;V

I=0V;I

I=30mA [3] -3.65Ω

VCC =4.5V;V

I=2.4V;I

I=15mA [3] -1735Ω

Product data sheet Rev. 8 — 1 May 2012 5 of 17

NXP Semiconductors CBTD3306

Dual bus switch with level shifting

10.1 Typical pass voltage graphs

(1) ISW = 100 μA

(2) ISW = 6 mA

(3) ISW =12 mA

(4) ISW = 24 mA

(1) ISW = 100 μA

(2) ISW = 6 mA

(3) ISW =12 mA

(4) ISW = 24 mA

Fig 6. Pass voltage versus supply voltage;

Tamb =85°C (typical) Fig 7. Pass voltage versus supply voltage;

Tamb =70°C (typical)

001aak834

VCC (V)

4.4 5.65.24.8

2.8

2.4

3.2

3.6

Vpass

(V)

2.0

(4)

(3)

(1)

(2)

001aak835

VCC (V)

4.4 5.65.24.8

2.8

2.4

3.2

3.6

Vpass

(V)

2.0

(4)

(1)

(2)

(3)

(1) ISW = 100 μA

(2) ISW = 6 mA

(3) ISW =12 mA

(4) ISW = 24 mA

(1) ISW = 100 μA

(2) ISW = 6 mA

(3) ISW =12 mA

(4) ISW = 24 mA

Fig 8. Pass voltage versus supply voltage;

Tamb =25°C (typical) Fig 9. Pass voltage versus supply voltage;

Tamb =0°C (typical)

001aak836

VCC (V)

4.4 5.65.24.8

2.8

2.4

3.2

3.6

Vpass

(V)

2.0

(4)

(1)

(2)

(3)

001aak837

VCC (V)

4.4 5.65.24.8

2.8

2.4

3.2

3.6

Vpass

(V)

2.0

(4)

(1)

(3)

(2)

Product data sheet Rev. 8 — 1 May 2012 6 of 17

NXP Semiconductors CBTD3306

Dual bus switch with level shifting

(1) ISW = 100 μA

(2) ISW = 6 mA

(3) ISW =12 mA

(4) ISW = 24 mA

Fig 10. Pass voltage versus supply voltage; Tamb =−40 °C (typical)

001aak838

VCC (V)

4.4 5.65.24.8

2.8

2.4

3.2

3.6

Vpass

(V)

2.0

(1)

(3)

(2)

(4)

Product data sheet Rev. 8 — 1 May 2012 7 of 17

NXP Semiconductors CBTD3306

Dual bus switch with level shifting

11. Dynamic characteristics

[1] The propagation delay is the calculated RC time constant of the typical ON resistance of the switch and the specified load capacitance,

when driven by an ideal voltage source (zero output impedance).

[2] tpd is the same as tPLH and tPHL.

ten is the same as tPZL and tPZH.

tdis is the same as tPLZ and tPHZ.

12. Waveforms

Table 8. Dynamic characteristics

Voltages are referenced to GND (ground = 0 V). For test circuit see Figure 13.

Symbol Parameter Conditions Tamb = −40 °C to +85 °CUnit

Min Typ Max

tpd propagation delay nA, nB to nB, nA; see Figure 11 [1][2] - - 0.25 ns

VCC = 5.0 V ±0.5 V

ten enable time nOE to nA or nB; see Figure 12 [2] 1.0 - 5.4 ns

VCC = 5.0 V ±0.5 V

tdis disable time nOE to nA or nB; see Figure 12 [2] 1.0 - 4.9 ns

VCC = 5.0 V ±0.5 V

Measurement points are given in Table 9.

Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.

Fig 11. The data input (nA, nB) to output (nB, nA) propagation delay times

001aak305

tPLH

tPHL

nB, nA

output

nA, nB

input

GND

VOH

VOL

Product data sheet Rev. 8 — 1 May 2012 8 of 17

NXP Semiconductors CBTD3306

Dual bus switch with level shifting

Measurement points are given in Table 9.

Logic levels: VOL and VOH are typical output voltage levels that occur with the output load.

Fig 12. Enable and disable times

001aak298

PLZ

PHZ

outputs

disabled outputs

enabled

outputs

enabled

output

LOW to OFF

OFF to LOW

output

HIGH to OFF

OFF to HIGH

nOE input

3.5 V

GND

PZL

PZH

Table 9. Measurement points

Supply voltage Input Output

VCC VIVMVMVXVY

VCC = 5.0 V ±0.5 V GND to 3.0 V 1.5 V 1.5 V VOL + 0.3 V VOH −0.3 V

Product data sheet Rev. 8 — 1 May 2012 9 of 17

NXP Semiconductors CBTD3306

Dual bus switch with level shifting

13. Test information

Test data is given in Table 10.

All input pulses are supplied by generators having the following characteristics: PRR ≤10 MHz; Zo=50Ω.

The outputs are measured one at a time with one transition per measurement.

Definitions for test circuit:

RL= Load resistance.

CL= Load capacitance including jig and probe capacitance.

RT= Termination resistance should be equal to output impedance Zoof the pulse generator.

VEXT = External voltage for measuring switching times.

Fig 13. Test circuit for measuring switching times

10 %

90 %

0 V

negative

pulse

positive

pulse

0 V

90 %

10 %

001aae331

EXT

DUT

Table 10. Test data

Supply voltage Input Load VEXT

VItr, tfCLRLtPLH, tPHL tPLZ, tPZL tPHZ, tPZH

VCC = 5.0 V ±0.5 V GND to 3.0 V ≤2.5 ns 50 pF 500 Ωopen 7.0 V open

Product data sheet Rev. 8 — 1 May 2012 10 of 17

NXP Semiconductors CBTD3306

Dual bus switch with level shifting

14. Package outline

Fig 14. Package outline SOT96-1 (SO8)

UNIT A

max. A1A2A3bpcD

(1) E(2) (1)

ELL

pQZywv θ

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

inches

1.75 0.25

0.10 1.45

1.25 0.25 0.49

0.36 0.25

0.19 5.0

4.8 4.0

3.8 1.27 6.2

5.8 1.05 0.7

0.6 0.7

0.3 8

0.25 0.10.25

DIMENSIONS (inch dimensions are derived from the original mm dimensions)

Notes

1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.

2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.

1.0

0.4

SOT96-1

detail X

vMA

(A )

pin 1 index

076E03 MS-012

0.069 0.010

0.004 0.057

0.049 0.01 0.019

0.014 0.0100

0.0075 0.20

0.19 0.16

0.15 0.05 0.244

0.228 0.028

0.024 0.028

0.012

0.010.010.041 0.004

0.039

0.016

0 2.5 5 mm

scale

SO8: plastic small outline package; 8 leads; body width 3.9 mm SOT96-1

99-12-27

03-02-18

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