ST STEVAL-IPMnM1S Bedienungsanleitung
Introduction
The STEVAL-IPMnM1S is a compact motor drive power board based on SLLIMM-nano SMD (small low-loss intelligent molded
module) product (STIPNS1M50T-H). It provides an affordable and easy-to-use solution for driving high power motors in a wide
range of applications such as power white goods, air conditioning, compressors, power fans and 3-phase inverters for motor
drives in general.
The IPM itself consists of six MOSFETs, three high voltage half-bridge gate driver ICs and a wide range of features like
undervoltage lockout, smart shutdown, internal temperature sensor and NTC, overcurrent protection and internal op-amp.
The main characteristics of this evaluation board are small size, minimal BOM and high efficiency. It features an interface circuit
(BUS and VCC connectors), bootstrap capacitors, snubber capacitor, hardware short-circuit protection, fault event signal and
temperature monitoring. It is designed to work in single- or three-shunt configuration and with triple current sensing options:
three dedicated on-board op-amps, op-amps embedded on MCU or single internal IPM op-amp. The Hall/Encoder part
completes the circuit.
The system is designed to achieve accurate and fast conditioning of current feedback to satisfy the typical requirements for field
oriented control (FOC).
The STEVAL-IPMnM1S is compatible with ST’s control board based on STM32, providing a complete platform for motor control.
Figure 1. Motor control board (top view) based on SLLIMM-nano SMD
STEVAL-IPMnM1S motor control power board based on the SLLIMM™-nano
SMD of MOSFET IPMs
UM2467
User manual
UM2467 - Rev 1 - September 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
1General safety instructions
Danger:
The evaluation board works with high voltage which could be deadly for the users. Furthermore all
circuits on the board are not isolated from the line input. Due to the high power density, the
components on the board as well as the heat sink can be heated to a very high temperature,
which can cause a burning risk when touched directly. This board is intended for use by
experienced power electronics professionals who understand the precautions that must be taken
to ensure that no danger or risk may occur while operating this board.
Caution: After the operation of the evaluation board, the bulk capacitor C1 (if used) may still store a high energy for
several minutes. So it must be first discharged before any direct touching of the board.
Important:
To protect the bulk capacitor C1, we strongly recommended using an external brake chopper after C1 (to discharge the high
brake current back from the induction motor).
UM2467
General safety instructions
UM2467 - Rev 1 page 2/30
2Key features
• Input voltage: from 125 to 400 VDC
• Nominal power: up to 60 W
• Nominal current: up to 0.6 A
• Input auxiliary voltage: up to 20 VDC
• Single- or three-shunt resistors for current sensing (with sensing network)
• Three options for current sensing: dedicated external op-amps, internal SLLIMM-nano SMD op-amp (single)
or via MCU
• Overcurrent hardware protection
• IPM temperature monitoring and protection
• Hall sensor or encoder input
• MOSFETs intelligent power module:
– SLLIMM-nano IPM (STIPNS1M50T-H) - SMD package
• Motor control connector (32 pins) interfacing with ST MCU boards
• Universal design for further evaluation with breadboard and testing pins
• Very compact size
• WEEE compliant
• RoHS compliant
UM2467
Key features
UM2467 - Rev 1 page 3/30
3Circuit schematics
The full schematics for the SLLIMM-nano SMD card for STIPNS1M50T-H IPM products is shown below. This card
consists of an interface circuit (BUS and VCC connectors), bootstrap capacitors, snubber capacitor, short-circuit
protection, fault output circuit, temperature monitoring, single-/three-shunt resistors and filters for input signals. It
also includes bypass capacitors for VCC and bootstrap capacitors. The capacitors are located very close to the
drive IC to avoid malfunction due to noise.
Three current sensing options are provided: three dedicated onboard op-amps, one internal IPM op-amp and the
embedded MCU op-amps; selection is performed through three jumpers.
The Hall/Encoder section (powered at 5 V or 3.3 V) completes the circuit.
3.1 Schematic diagrams
Figure 2. STEVAL-IPMnM1S - circuit schematic (1 of 5)
UM2467
Circuit schematics
UM2467 - Rev 1 page 4/30
Figure 3. STEVAL-IPMnM1S - circuit schematic (2 of 5)
UM2467
Schematic diagrams
UM2467 - Rev 1 page 5/30
Figure 4. STEVAL-IPMnM1S - circuit schematic (3 of 5)
D2
LED Red
R
6
4
D9
00
0B
Phase C - input
P
P
R
R9
0
0
0 0
OP
9
0p 0p
R10
0P4
P3
P2
8
P
Phase B - input
Phase A - input
PB
PB
R8 1k0
R14 1k0 0
0p 0p
4
R19 1k0
PA
A
P
P
PP
R13 1k0 6
0p 0p
R15 1k0
R
8
4
P0
P
P
P
4
P
P
P
6
P8
nano OP+
nano OPOUT
nano OP-
4
6
8
9
0
4
6
STIPNS1M50T-H
IPM module
D
D/OD
OP+
OPOUT
OP-
D/OD1
O
6
4
boo
O
boo
O
boo
P
P
D8
0B
TP19
TP10
TP13
D7
0B
6
0
TP18
9
8
D6
TP9
0B
B
TP17
0400V
D3
D4
D5
R16 R17 R18
0.68 1W 0.68 1W 0.68 1W
1_SHUNT 1_SHUNT
6TP16
TP11
8
phase _A
phase _B
phase _C
3_SHUNT
3_SHUNT
UM2467
Schematic diagrams
UM2467 - Rev 1 page 6/30
Figure 5. STEVAL-IPMnM1S - circuit schematic (4 of 5)
UM2467
Schematic diagrams
UM2467 - Rev 1 page 7/30
Figure 6. STEVAL-IPMnM1S - circuit schematic (5 of 5)
Hall/Encoder
M_phase_A
M_phase_C
M_phase_B
3.3V
+5V
3.3V
+5V
R42
4k7
R392k4
J5
Encoder/Hall
11
22
33
44
55
SW12
C37
10p
SW15
C34
100n
SW13
SW10
R40
4k7
SW9
1
2
3
R34
4k7
R41
4k7
R35
4k7
C33
100n
C35
10p
R372k4
SW14
R382k4
C32
100n
SW16
1
2
3
R36
4k7
SW11
C36
10p
UM2467
Schematic diagrams
UM2467 - Rev 1 page 8/30
4Main characteristics
The board is designed for a 125 VDC to 400 VDC supply voltage.
An appropriate bulk capacitor for the power level of the application must be mounted at the dedicated position on
the board.
The SLLIMM-nano SMD integrates six MOSFET switches with freewheeling diodes and high voltage gate drivers.
Thanks to this integrated module, the system offers power inversion in a simple and compact design that requires
less PCB area and increases reliability.
The board offers the added flexibility of being able to operate in single- or three-shunt configuration by modifying
solder bridge jumper settings (see Section 5.3.4 Single- or three-shunt selection).
Figure 7. STEVAL-IPMnM1S architecture
UM2467
Main characteristics
UM2467 - Rev 1 page 9/30
5Filters and key parameters
5.1 Input signals
The input signals (LINx and HINx) to drive the internal MOSFETs are active high. A 375 kΩ (typ.) pull-down
resistor is built-in for each input signal. To prevent input signal oscillation, an RC filter is added on each input as
close as possible to the IPM. The filter is designed using a time constant of 10 ns (1 kΩ and 10 pF).
5.2 Bootstrap capacitor
In the 3-phase inverter, the emitters of the low side MOSFETs are connected to the negative DC bus (VDC-) as
common reference ground, which allows all low side gate drivers to share the same power supply, while the
emitter of the high side MOSFETs is alternatively connected to the positive (VDC+) and negative (VDC-) DC bus
during running conditions.
A bootstrap method is a simple and cheap solution to supply the high voltage section. This function is normally
accomplished by a high voltage fast recovery diode. The SLLIMM-nano SMD MOSFET-based family includes a
patented integrated structure that replaces the external diode with a high voltage DMOS functioning as a diode
with series resistor. An internal charge pump provides the DMOS driving voltage.
The value of the CBOOT capacitor should be calculated according to the application requirements.
Figure 8. CBOOT graph selection shows the behavior of CBOOT (calculated) versus switching frequency (fsw), with
different values of ∆VCBOOT for a continuous sinusoidal modulation and a duty cycle δ = 50%.
Note: This curve is taken from application note AN4840 (available on www.st.com); calculations are based on the
STGIP5C60T-Hyy device, which represents the worst case scenario for this kind of calculation.
The boot capacitor must be two or three times larger than the CBOOT calculated in the graph.
For this design, a value of 2.2 µF was selected.
Figure 8. CBOOT graph selection
UM2467
Filters and key parameters
UM2467 - Rev 1 page 10/30
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