Texas Instruments Bq78350-R1 Bedienungsanleitung

SLUUBM6–March 2018

bq78350-R1 TRM Addendum for the bq78350-R2 Device

Preface

SLUUBM6–March 2018

bq78350-R1 TRM Addendum for the bq78350-R2 Device

This document is an addendum to the bq78350-R1 Technical Reference Manual (TRM, SLUUBD3) and

discusses modifications relating to the bq78350-R2 device. Items not discussed in this addendum have

not changed.

Notational Conventions

Information Type Formatting Convention Example

Commands Italics with parentheses and no breaking spaces RemainingCapacity() command

Data Flash (DF) Italics,bold, and breaking spaces Design Capacity data

Data flash bits Brackets, italics, and bold [LED1] bit

Modes and states ALL CAPITALS UNSEALED mode

Related Documentation from Texas Instruments

The following is related documentation:

1. bq78350-R1 Technical Reference Manual (SLUUBD3)

2. bq78350-R1 CEDV Li-Ion Gas Gauge and Battery Management Controller Companion to the bq769x0

Battery Monitoring AFE Data Sheet (SLUSCD0)

3. bq78350 Data Memory Programming for Mass Production Application Report (SLUA742)

Trademarks

All trademarks are the property of their respective owners.

Glossary

TI Glossary —This glossary lists and explains terms, acronyms, and definitions.

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TRM Addendum

SLUUBM6–March 2018

Overview

Contents

1 General Description ......................................................................................................... 2

2 Production Plans............................................................................................................. 2

3 Added Features.............................................................................................................. 2

4 Changed and Removed Features ....................................................................................... 12

1 General Description

The bq78350-R2 device is a modified version of the catalog bq78350-R1 device, which modifies selected

functionality as well as adding new features. This document details the changes regarding the bq78350-

R2 device with respect to the bq78350-R1 device.

2 Production Plans

To use the bq78350-R2 device, customers must order the catalog bq78350-R1 device from TI.com, and

program the device with the TI-provided bq78350-R2 firmware. Thus, the package and pinout will remain

the same as the bq78350-R1 device, with the exception of some modified functionality associated with the

GPIO_B pin.

3 Added Features

3.1 PRE-DISCHARGE Mode

The bq78350-R2 device includes new functionality to provide pre-discharge control functionality on the

GPIO_B pin (pin 28) for use with a high-side PFET. This pin functions as an open-drain output pin, which

is expected to drive the gate of an NFET with source at ground. When the NFET is turned on, it will pull

down the PFET gate and enable pre-discharge. When the NFET is turned off, the PFET gate will be pulled

up and turn off the PFET, disabling pre-discharge.

RPREDSG

RPULLUP 2

DSGCHG

VCC

PACK+

CELL+

bq76200

bq78350

RPULLUP1

GPIO_B

RDIVIDE

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Overview

Figure 1. PRE-DISCHARGE

If the DSG FET is off and the bq78350-R2 device receives a request to turn it on, and if the bq78350 does

not detect a charging current above a level of Charge Current Threshold, the bq78350-R2 device will

first enter a pre-discharge phase for a length of time given by Pre-Discharge:[FET ON Time]. After this

time expires, the bq78350-R2 device will disable the pre-discharge phase and turn on the DSG FET.

If the DSG FET is off and the bq78350-R2 device receives a request to turn it on, and if the bq78350-R2

device detects a charging current above a level of Charge Current Threshold, the bq78350-R2 device

will immediately turn on the DSG FET and not first implement a pre-discharge phase.

While the bq78350-R2 device is in the pre-discharge phase, if any fault or issue occurs that would

normally cause the DSG FET to be disabled (such as ACSD, AOLD, OTD, UTD), then the bq78350-R2

device will immediately disable the pre-discharge phase but keep the DSG FET off until all such faults are

cleared.

3.1.1 Flash Changes for PRE-DISCHARGE Mode

Data flash bits to enable/disable the pre-discharge functionality and control the polarity of the signaling

used on GPIO_B are included in the FET Options register.

Class Subclass Name Format Size in

Bytes Min Max Default Unit

Settings Configuration FET Options Hex 2 0x0000 0xFFFF 0x0021 —

Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

High byte RSVD RSVD RSVD RSVD PDSG_POL PDSG_EN KEY_POL PCHG_POL

Low Byte RSVD SLEEPCHG CHGFET CHGIN CHGSU OTFET KEY_EN PCHG_EN

RSVD (Bits 7–4): Reserved

PDSG_POL: Configures the bq78350-R2 device GPIO_B pin output polarity when used for PRE-

DISCHARGE mode. If PDSG_EN = 0, then this bit has no influence.

0 = The bq78350-R2 device configures the GPIO_B as active low (default).

1 = The bq78350-R2 device configures the GPIO_B as active high, requiring an external pull up.

Added Features

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PDSG_EN: This bit enables the bq78350-R2 device to use the GPIO_B pin during PRE-DISCHARGE

mode. 0 = The bq78350-R2 device does not use GPIO_B for PRE-DISCHARGE mode (default)

1 = The bq78350-R2 device controls GPIO_B under normal charge control algorithm.

KEY_POL: This bit configures the KEYIN input detection polarity.

0 = KEYIN detection is active low (default).

1 = KEYIN detection is active high.

PCHG_POL: Configures the bq78350-R2 device PRECHG pin output polarity. If PCHG_EN = 0, then

this bit has no influence.

0 = The bq78350-R2 device configures the PRECHG as active low (default).

1 = The bq78350-R2 device configures the PRECHG as active high, requiring an external pull

up.

SLEEPCHG: CHG FET is enabled during SLEEP.

0 = CHG FET is off during SLEEP (default).

1 = CHG FET remains on during SLEEP.

CHGFET: FET action on valid charge termination

0 = FET active

1 = Charging and precharging disabled, FET off (default)

CHGIN: FET action in CHARGE INHIBIT mode

0 = FET active (default)

1 = Charging and precharging disabled, FETs off

CHGSU: FET action in CHARGE SUSPEND mode

0 = FET active (default)

1 = Charging and precharging disabled, FETs off

OTFET: FET action in OVERTEMPERATURE mode

0 = No FET action for overtemperature condition (default)

1 = CHG and DSG FETs will be turned off for overtemperature conditions.

KEY_EN: Enables the bq78350-R2 device to use the KEYIN pin function.

0 = The bq78350-R2 device never uses KEYIN (default).

1 = The bq78350-R2 device KEYIN is used to control the DSG FET.

PCHG_EN: This bit enables the bq78350-R2 device to use the PRECHG pin during PRECHARGE

mode. 0 = The bq78350-R2 device never uses PRECHG.

1 = The bq78350-R2 device controls PRECHG under normal charge control algorithm (default).

The Pre-Discharge:[FET ON Time] setting is included in the following data flash:

Class Subclass Name Type Min Max Default Unit

Power Pre-Discharge FET ON Time U2 0 65535 10 s

3.1.2 Command Changes for PRE-DISCHARGE Mode

3.1.2.1 ManufacturerAccess() 0x0057 ManufacturingStatus

This command returns the ManufacturingStatus() flags on ManufacturerBlockAccess() or

ManufacturerData(). A new [PDSG_TEST] bit was added here for the bq78350-R2 device.

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Added Features

SLUUBM6–March 2018

Overview

Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0

High byte CAL_EN LT_TEST CB_TEST AFE_DD

_TEST RSVD RSVD LED_EN SAFE_EN

Low Byte BBR_EN PF_EN LF_EN FET_EN PDSG

_TEST DSG_TEST CHG_TEST PCHG

_TEST

PDSG_TEST: Pre-Discharge FET Test

0 = Disabled

1 = Pre-discharge FET test activated

Added Features

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3.1.2.2 ManufacturerAccess() 0x001A PRE-DSG FET

This command turns on/off the pre-discharge FET drive function (which uses GPIO_B) to ease testing

during manufacturing. When 0x001A is written to ManufacturerAccess() when

ManufacturingStatus()[FET_EN,PDSG_TEST] = 0, 0, then GPIO_B turns the pre-discharge function ON

and ManufacturingStatus()[PDSG_TEST] is set to 1. If 0x001A is written to ManufacturerAccess() once

again, then GPIO_B turns the pre-discharge function OFF and ManufacturingStatus()[PDSG_TEST] is

cleared to 0.

NOTE: The GPIO mode should not be used on GPIO_B while the PRE-DISCHARGE mode is used.

3.2 JEITA Charge Control

The existing bq78350-R1 device does not include JEITA charge control. This functionality is added in the

bq78350-R2 device.

NOTE: Some existing data flash addresses were modified from bq78350-R1 device to

accommodate the extra address space required for this feature.

The class name is changed from Charge Algorithm to Advanced Charge Algorithm.

3.2.1 Temperature Ranges

Temperature Ranges ≥values are changed from:

•Charge Inhibit/Suspend Low Temp

•Precharge Temp

•Charge Inhibit High Temp

•Charge Suspend High Temp

To:

•T1 Temp

•T2 Temp

•T5 Temp

•T6 Temp

•T3 Temp

•T4 Temp

See further details on these changes below:

3.2.1.1 T1 Temp

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Temperature

Ranges T1 Temp I1 –128 127 0 °C

Description: T1 low temperature range lower limit

3.2.1.2 T2 Temp

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Temperature

Ranges T2 Temp I1 –128 127 12 °C

Description: T2 low temperature range to standard temperature range

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3.2.1.3 T5 Temp

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Temperature

Ranges T5 Temp I1 –128 127 20 °C

Description: T5 recommended temperature range lower limit

3.2.1.4 T6 Temp

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Temperature

Ranges T6 Temp I1 –128 127 25 °C

Description: T6 recommended temperature range upper limit

3.2.1.5 T3 Temp

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Temperature

Ranges T3 Temp I1 –128 127 30 °C

Description: T3 standard temperature range to high temperature range

3.2.1.6 T4 Temp

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Temperature

Ranges T4 Temp I1 –128 127 55 °C

Description: T4 high temperature range upper limit

3.2.1.7 Hysteresis

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Temperature

Ranges Hysteresis Temp I1 –128 127 1 °C

Description: Temperature Hysteresis, applied when temperature is decreasing.

3.2.2 Fast Charging

Fast Charging →Voltage and Current is replaced with:

• Low Temp Charging →Voltage

• Low Temp Charging →Current Low

• Low Temp Charging →Current Med

• Low Temp Charging →Current High

• Standard Temp Charging →Voltage

• Standard Temp Charging →Current Low

• Standard Temp Charging →Current Med

• Standard Temp Charging →Current High

• High Temp Charging →Voltage

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• High Temp Charging →Current Low

• High Temp Charging →Current Med

• High Temp Charging →Current High

• Rec Temp Charging →Voltage

• Rec Temp Charging →Current Low

• Rec Temp Charging →Current Med

• Rec Temp Charging →Current High

See further description on these changes below:

3.2.3 Low Temp Charging

3.2.3.1 Voltage

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Low Temp

Charging Voltage I2 0 32767 4000 mV

Description: Low temperature range ChargingVoltage().

3.2.3.2 Current Low

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Low Temp

Charging Current Low I2 0 32767 132 mA

Description: Low temperature range low voltage range ChargingCurrent()

3.2.3.3 Current Med

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Low Temp

Charging Current Med I2 0 32767 352 mA

Description: Low temperature range medium voltage range ChargingCurrent()

3.2.3.4 Current High

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Low Temp

Charging Current High I2 0 32767 264 mA

Description: Low temperature range high voltage range ChargingCurrent()

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3.2.4 Standard Temp Charging

3.2.4.1 Voltage

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Standard Temp

Charging Voltage I2 0 32767 4200 mV

Description: Standard temperature range ChargingVoltage()

3.2.4.2 Current Low

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Standard Temp

Charging Current Low I2 0 32767 1980 mA

Description: Standard temperature range low voltage range ChargingCurrent()

3.2.4.3 Current Med

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Standard Temp

Charging Current Med I2 0 32767 4004 mA

Description: Standard temperature range medium voltage range ChargingCurrent()

3.2.4.4 Current High

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Standard Temp

Charging Current High I2 0 32767 2992 mA

Description: Standard temperature range high voltage range ChargingCurrent()

3.2.5 High Temp Charging

3.2.5.1 Voltage

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms High Temp

Charging Voltage I2 0 32767 4000 mV

Description: High temperature range ChargingVoltage()

3.2.5.2 Current Low

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms High Temp

Charging Current Low I2 0 32767 1012 mA

Description: High temperature range low voltage range ChargingCurrent()

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3.2.5.3 Current Med

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms High Temp

Charging Current Med I2 0 32767 1980 mA

Description: High temperature range medium voltage range ChargingCurrent()

3.2.5.4 Current High

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms High Temp

Charging Current High I2 0 32767 1496 mA

Description: High temperature range high voltage range ChargingCurrent()

3.2.6 Recommended Temp Charging

3.2.6.1 Voltage

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Rec Temp

Charging Voltage I2 0 32767 4100 mV

Description: Recommended temperature range ChargingVoltage()

3.2.6.2 Current Low

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Rec Temp

Charging Current Low I2 0 32767 2508 mA

Description: Recommended temperature range low voltage range ChargingCurrent()

3.2.6.3 Current Med

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Rec Temp

Charging Current Med I2 0 32767 4488 mA

Description: Recommended temperature range medium voltage range ChargingCurrent()

3.2.6.4 Current High

Class Subclass Name Type Min Max Default Unit

Advanced Charging

Algorithms Rec Temp

Charging Current High I2 0 32767 3520 mA

Description: Recommended temperature range high voltage range ChargingCurrent()

3.2.7 Pre-Charging

Pre-Charging →Current is retained, while Start Voltage and Recovery Voltage are removed.

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