Cypress Semiconductor CY7C1007B Bedienungsanleitung

1M x 1 Static RAM

CY7C107B

CY7C1007B

Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600

Document #: 38-05030 Rev. ** Revised September 7, 2001

07B

Features

• High speed

—tAA = 12 ns

• CMOS for optimum speed/power

• Automatic power-down when deselected

• TTL-compatible inputs and outputs

Functional Description

The CY7C107B and CY7C1007B are high-performance

CMOS static RAMs organized as 1,048,576 words by 1 bit.

Easy memory expansion is provided by an active LOW Chip

Enable (CE) and three-state drivers. These devices have an

automatic power-down feature that reduces power consump-

tion by more than 65% when deselected.

Writing to the devices is accomplished by taking Chip Enable

(CE) and Write Enable (WE) inputs LOW. Data on the input pin

(DIN) is written into the memory location specified on the ad-

dress pins (A0through A19).

Reading from the devices is accomplished by taking Chip En-

able(CE)LOWwhileWriteEnable(WE)remainsHIGH.Under

these conditions, the contents of the memory location speci-

fied by the address pins will appear on the data output (DOUT)

pin.

The output pin (DOUT) is placed in a high-impedance state

when the device is deselected (CE HIGH) or during a write

operation (CE and WE LOW).

The CY7C107B is available in a standard 400-mil-wide SOJ;

the CY7C1007B is available in a standard 300-mil-wide SOJ.

LogicBlock Diagram Pin Configuration

Top View

SOJ

512x2048

ARRA

COLUMN

DECODER

ROW DECODER

SENSE AMPS

POWER

DOWN

INPUT BUFFER

DOUT

DIN

14 15

GND

A11

A12

A13

A14

VCC

A10

DOUT DIN

A15

A16

A12

A14

A16

A15

A10

A11

A13

A17

A18

A19

A17

A18

A19

107B-1

107B-2

Selection Guide

7C107B-12

7C1007B-12 7C107B-15

7C1007B-15 7C107B-20

7C1007B-20 7C107B-25

7C1007B-25 7C107B-35

7C1007B-35

Maximum Access Time (ns) 12 15 20 25 35

Maximum Operating

Current (mA) 90 80 75 70 60

Maximum CMOS Standby

Current SB2 (mA) 2 2 2 2 2

[+] Feedback

CY7C107B

CY7C1007B

Document #: 38-05030 Rev. ** Page 2 of 9

Maximum Ratings

(Above which the useful life may be impaired. For user guide-

lines, not tested.)

Storage Temperature .....................................−65°C to +150°C

Ambient Temperature with

Power Applied..................................................−55°C to +125°C

Supply Voltage on VCC Relative to GND[1] .....−0.5V to +7.0V

DC Voltage Applied to Outputs

in High Z State[1] .......................................−0.5V to VCC + 0.5V

DC Input Voltage[1].................................... −0.5V to VCC + 0.5V

Current into Outputs (LOW) ........................................ 20 mA

Static Discharge Voltage...........................................>2001V

(per MIL-STD-883, Method 3015)

Latch-Up Current.....................................................>200 mA

Notes:

1. VIL (min.) = –2.0V for pulse durations of less than 20 ns.

2. TAis the “Instant On”case temperature.

3. Not more than 1 output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.

Operating Range

Range Ambient

Temperature[2] VCC

Commercial 0°C to +70°C 5V ±10%

Industrial −40°C to +85°C 5V ±10%

Electrical Characteristics Over the Operating Range

Parameter Description Test Conditions

7C107B-12

7C1007B-12 7C107B-15

7C1007B-15 7C107B-20

7C1007B-20

Min. Max. Min. Max. Min. Max. Unit

VOH Output HIGH

Voltage VCC =Min.,IOH =−4.0mA 2.4 2.4 2.4 V

VOL Output LOW

Voltage VCC = Min., IOL = 8.0 mA 0.4 0.4 0.4 V

VIH Input HIGH

Voltage 2.2 VCC+

0.3 2.2 VCC+

0.3 V

VIL Input LOW

Voltage[1] −0.3 0.8 −0.3 0.8 −0.3 0.8 V

IIX Input Load Current GND <VI< VCC −1+1−1+1−1+1µA

IOZ Output Leakage

Current GND <VI <VCC,

Output Disabled –5+5–5+5–5+5µA

IOS Output Short

Circuit Current[3] VCC = Max., VOUT = GND −300 −300 −300 mA

ICC VCC Operating

Supply Current VCC = Max.,

IOUT = 0 mA,

f = fMAX = 1/tRC

90 80 75 mA

ISB1 Automatic CE

Power-Down

Current—TTL Inputs

Max. VCC, CE > VIH,

VIN >VIH or VIN < VIL,

f = f MAX

20 20 20 mA

ISB2 Automatic CE

Power-Down

Current—

CMOS Inputs

Max. VCC,

CE > VCC –0.3V,

VIN > VCC –0.3V or

VIN < 0.3V, f = 0

222mA

[+] Feedback

CY7C107B

CY7C1007B

Document #: 38-05030 Rev. ** Page 3 of 9

Electrical Characteristics Over the Operating Range (continued)

Parameter Description Test Conditions

7C107B-25

7C1007B-25 7C107B-35

7C1007B-35

Min. Max. Min. Max. Unit

VOH Output HIGH

Voltage VCC = Min., IOH = −4.0 mA 2.4 2.4 V

VOL Output LOW Voltage VCC = Min., IOL = 8.0 mA 0.4 0.4 V

VIH Input HIGH Voltage 2.2 VCC + 0.3 2.2 VCC + 0.3 V

VIL Input LOW Voltage[1] −0.3 0.8 −0.3 0.8 V

IIX Input Load Current GND <VI< VCC −1+1−1+1µA

IOZ Output Leakage

Current GND <VI <VCC,

Output Disabled −5+5−5+5µA

IOS Output Short

Circuit Current[3] VCC = Max., VOUT = GND −300 −300 mA

ICC VCC Operating

Supply Current VCC = Max.,

IOUT = 0 mA,

f = fMAX = 1/tRC

70 60 mA

ISB1 Automatic CE

Power-Down

Current—TTL Inputs

Max. VCC, CE > VIH,

VIN >VIH or VIN < VIL,

f = f MAX

20 20 mA

ISB2 Automatic CE

Power-Down

Current—CMOS Inputs

Max. VCC,

CE > VCC –0.3V,

VIN > VCC –0.3V or

VIN < 0.3V, f = 0

22mA

Capacitance[4]

Parameter Description Test Conditions Max. Unit

CIN:Addresses Input Capacitance TA= 25°C, f = 1 MHz,

VCC = 5.0V 7pF

CIN: Controls 10 pF

COUT Output Capacitance 10 pF

Note:

4. Tested initially and after any design or process changes that may affect these parameters.

[+] Feedback

CY7C107B

CY7C1007B

Document #: 38-05030 Rev. ** Page 4 of 9

AC Test Loads and Waveforms

3.0V

OUTPUT

R1 480Ω

255Ω

30 pF

INCLUDING

JIG AND

SCOPE

GND 90%

10% 90%

10%

≤ 3ns ≤ 3ns

OUTPUT

5pF

INCLUDING

JIG AND

SCOPE

(a) (b)

OUTPUT 1.73V

Equivalentto: THÉVENIN EQUIVALENT

ALL INPUT PULSES

255Ω

R1 480Ω

167Ω

107-3

107-4

Switching Characteristics[5]Over the Operating Range

7C107B-12

7C1007B-12 7C107B-15

7C1007B-15 7C107B-20

7C1007B-20 7C107B-25

7C1007B-25 7C107B-35

7C1007B-35

Parameter Description Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit

READ CYCLE

tRC Read Cycle Time 12 15 20 25 35 ns

tAA Address to Data Valid 12 15 20 25 35 ns

tOHA Data Hold from Address

Change 33333ns

tACE CE LOW to Data Valid 12 15 20 25 35 ns

tLZCE CE LOW to Low Z[6] 33333ns

tHZCE CE HIGH to High Z[6, 7] 6781010ns

tPU CE LOW to Power-Up 0 0 0 0 0 ns

tPD CE HIGH to Power-Down 12 15 20 25 35 ns

WRITE CYCLE[8]

tWC Write Cycle Time 12 15 20 25 35 ns

tSCE CE LOW to Write End 10 12 15 20 25 ns

tAW Address Set-Up to Write

End 10 12 15 20 25 ns

tHA Address Hold from Write

End 00000ns

tSA Address Set-Up to Write

Start 00000ns

tPWE WE Pulse Width 10 12 15 20 25 ns

tSD Data Set-Up to Write End 7 8 10 15 20 ns

tHD Data Hold from Write End 0 0 0 0 0 ns

tLZWE WE HIGH to Low Z[6] 33333ns

tHZWE WE LOW to High Z[6, 7] 6781010ns

Notes:

5. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified

IOL/IOH and 30-pF load capacitance.

6. At any given temperature and voltage condition, tHZCE is less than tLZCE and tHZWE is less than tLZWE for any given device.

7. tHZCE and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.

8. The internal write time of the memory is defined by the overlap of CELOW and WELOW. CE andWEmust be LOW to initiatea write, andthe transition of any ofthese

signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.

[+] Feedback

CY7C107B

CY7C1007B

Document #: 38-05030 Rev. ** Page 5 of 9

Switching Waveforms

Read Cycle No. 1[10, 11]

Read Cycle No. 2[11, 12]

Write Cycle No. 1 (CE Controlled)[13]

Notes:

9. No input may exceed VCC + 0.5V.

10. Device is continuously selected, CE= VIL.

11. WE is HIGH for read cycle.

12. Address valid prior to or coincident with CE transition LOW.

PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

107-6

ADDRESS

DATA OUT

50%

DATA VALID

tRC

tACE

tLZCE

tPU

HIGH IMPEDANCE

tHZCE

tPD

HIGH

ICC

ISB

IMPEDANCE

ADDRESS

DATA OUT

VCC

SUPPLY

CURRENT 107-7

DATA VALID

tSCE

tAW

tSA

tPWE

tHA

tHD

tSD

tWC

HIGH IMPEDANCE

ADDRESS

DATA OUT

DATA IN

107-8

[+] Feedback

CY7C107B

CY7C1007B

Document #: 38-05030 Rev. ** Page 6 of 9

Write Cycle No. 2 (WE Controlled)[13]

Note:

13. If CE goes HIGH simultaneously with WE going HIGH, the output remains ina high-impedance state.

Switching Waveforms (continued)

tWC

DATA VALID

DATA UNDEFINED HIGH IMPEDANCE

tSCE

tAW

tSA tPWE tHA

tHD

tHZWE tLZWE

tSD

ADDRESS

DATA OUT

DATA IN

107-9

[+] Feedback

CY7C107B

CY7C1007B

Document #: 38-05030 Rev. ** Page 7 of 9

Package Diagrams

Truth Table

CE WE DOUT Mode Power

H X High Z Power-Down Standby (ISB)

L H Data Out Read Active (ICC)

L L High Z Write Active (ICC)

Ordering Information

Speed

(ns) Ordering Code Package

Name Package Type Operating

Range

12 CY7C107B-12VC V28 28-Lead (400-Mil) Molded SOJ Commercial

CY7C1007B-12VC V28 28-Lead (300-Mil) Molded SOJ Commercial

15 CY7C107B-15VC V28 28-Lead (400-Mil) Molded SOJ Commercial

CY7C1007B-15VC V28 28-Lead (300-Mil) Molded SOJ Commercial

15 CY7C107B-15VI V28 28-Lead (400-Mil) Molded SOJ Industrial

CY7C1007B-15VI V28 28-Lead (300-Mil) Molded SOJ Industrial

20 CY7C107B-20VC V28 28-Lead (400-Mil) Molded SOJ Commercial

CY7C1007B-20VC V28 28-Lead (300-Mil) Molded SOJ Commercial

25 CY7C107B-25VC V28 28-Lead (400-Mil) Molded SOJ Commercial

CY7C1007B-25VC V28 28-Lead (300-Mil) Molded SOJ Commercial

Contact factory for “L”version availability.

28-Lead (400-Mil) Molded SOJ V28

51-85032-A

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CY7C107B

CY7C1007B

Document #: 38-05030 Rev. ** Page 8 of 9

of any circuitry other than circuitryembodiedin a CypressSemiconductorproduct.Nor does itconvey orimply any license underpatent or other rights.Cypress Semiconductor does not authorize

its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress

Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doi

ng so indemnifies Cypress Semiconductor against all charges.

28-Lead (300-Mil) Molded SOJ V21

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CY7C107B

CY7C1007B

Document #: 38-05030 Rev. ** Page 9 of 9

Document Title: CY7C107B/CY7C1007B 1M x 1 Static RAM

Document Number: 38-05030

REV. ECN NO. Issue

Date Orig. of

Change Description of Change

** 109950 12/02/01 SZV Change from Spec number: 38-01116 to 38-05030

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Dieses Handbuch passt für folgende Modelle

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