Cypress Semiconductor MoBL CY62126EV30 Bedienungsanleitung

MoBL®,CY62126EV30

1-Mbit (64K x 16) Static RAM

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document #: 38-05486 Rev. *E Revised January 5, 2009

Features

■High speed: 45 ns

■Temperature ranges

❐Industrial: –40°C to +85°C

❐Automotive: –40°C to +125°C

■Wide voltage range: 2.2V to 3.6V

■Pin compatible with CY62126DV30

■Ultra low standby power

❐Typical standby current: 1 μA

❐Maximum standby current: 4 μA

■Ultra low active power

❐Typical active current: 1.3 mA at f = 1 MHz

■Easy memory expansion with CE and OE features

■Automatic power down when deselected

■CMOS for optimum speed and power

■Offered in Pb-free 48-ball VFBGA and 44-pin TSOP II

packages

Functional Description

The CY62126EV30 is a high performance CMOS static RAM

organized as 64K words by 16 bits[1]. This device features

advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life™ (MoBL®) in portable

applications such as cellular telephones. The device also has an

automatic power down feature that significantly reduces power

consumption when addresses are not toggling. Placing the

device in standby mode reduces power consumption by more

than 99 percent when deselected (CE HIGH). The input and

output pins (IO0through IO15) are placed in a high impedance

state when:

■Deselected (CE HIGH)

■Outputs are disabled (OE HIGH)

■Both Byte High Enable and Byte Low Enable are disabled

(BHE, BLE HIGH)

■Write operation is active (CE LOW and WE LOW)

To write to the device, take Chip Enable (CE) and Write Enable

(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data

from IO pins (IO0through IO7) is written into the location

specified on the address pins (A0through A15). If Byte High

Enable (BHE) is LOW, then data from IO pins (IO8through IO15)

is written into the location specified on the address pins (A0

through A15).

To read from the device, take Chip Enable (CE) and Output

Enable (OE) LOW while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appear on IO0to IO7. If

Byte High Enable (BHE) is LOW, then data from memory

appears on IO8to IO15. See the “Truth Table” on page 9 for a

complete description of read and write modes.

Note

1. For best practice recommendations, refer to the Cypress application note AN1064, SRAM System Guidelines.

Logic Block Diagram

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MoBL®, CY62126EV30

Document #: 38-05486 Rev. *E Page 2 of 13

Pin Configurations

Figure 1. 44-Ball VFBGA (Top View) Figure 2. 44-Pin TSOP II (Top View)[2]

Table 1. Product Portfolio

Notes

2. NC pins are not connected on the die.

3. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA= 25°C.

Product Range VCC Range (V) Speed

(ns)

Power Dissipation

Operating, ICC (mA) Standby, ISB2 (μA)

f = 1 MHz f = fmax

Min Typ[3] Max Typ[3] Max Typ[3] Max Typ[3] Max

CY62126EV30LL Industrial 2.2 3.0 3.6 45 1.3 2 11 16 1 4

CY62126EV30LL Automotive 2.2 3.0 3.6 55 1.3 4 11 35 1 30

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MoBL®, CY62126EV30

Document #: 38-05486 Rev. *E Page 3 of 13

Maximum Ratings

Exceeding maximum ratings may shorten the battery life of the

device. These user guidelines are not tested.

Storage Temperature ................................. –65°C to +150°C

Ambient Temperature with

Power Applied ............................................ –55°C to +125°C

Supply Voltage to Ground

Potential................................. –0.3V to 3.6V (VCCmax + 0.3V)

DC Voltage Applied to Outputs

in High-Z State[4, 5] ................–0.3V to 3.6V (VCCmax + 0.3V)

DC Input Voltage[4, 5] ...............−0.3V to 3.6V (VCCmax + 0.3V)

Output Current into Outputs (LOW)............................. 20 mA

Static Discharge Voltage.......................................... > 2001V

(MIL-STD-883, Method 3015)

Latch up Current.................................................... > 200 mA

Operating Range

Device Range Ambient

Temperature VCC[6]

CY62126EV30LL Industrial –40°C to +85°C 2.2V to

3.6V

Automotive –40°C to +125°C

Electrical Characteristics (Over the Operating Range)

Parameter Description Test Conditions 45 ns (Industrial) 55 ns (Automotive) Unit

Min Typ[1] Max Min Typ[1] Max

VOH Output HIGH Voltage IOH = –0.1 mA 2.0 2.0 V

IOH = –1.0 mA, VCC >2.70V 2.4 2.4 V

VOL Output LOW Voltage IOL = 0.1 mA 0.4 0.4 V

IOL = 2.1mA, VCC >2.70V 0.4 0.4 V

VIH Input HIGH Voltage VCC = 2.2V to 2.7V 1.8 VCC + 0.3 1.8 VCC + 0.3 V

VCC = 2.7V to 3.6V 2.2 VCC + 0.3 2.2 VCC + 0.3 V

VIL Input LOW

Voltage VCC = 2.2V to 2.7V –0.3 0.6 –0.3 0.6 V

VCC = 2.7V to 3.6V –0.3 0.8 –0.3 0.8 V

IIX Input Leakage Current GND < VI< VCC –1 +1 –4 +4 μA

IOZ Output Leakage

Current GND < VO <VCC, Output

Disabled –1 +1 –4 +4 μA

ICC VCC Operating Supply

Current

f = fmax = 1/tRC VCC = VCCmax

IOUT = 0 mA

CMOS levels

11 16 11 35 mA

f = 1 MHz 1.3 2.0 1.3 4.0

ISB1 Automatic CE Power

down Current

—CMOS Inputs

CE > VCC − 0.2V,

VIN >VCC – 0.2V, VIN <0.2V)

f = fmax (Address and Data Only),

f = 0 (OE, BHE, BLE and WE),

VCC = 3.60V

14 135μA

ISB2 [7] Automatic CE Power

down Current

—CMOS Inputs

CE > VCC – 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = 3.60V

14 130μA

Capacitance

For all packages. Tested initially and after any design or process changes that may affect these parameters.

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C, f = 1 MHz, VCC = VCC(typ) 10 pF

COUT Output Capacitance 10 pF

Notes

4. VIL(min) = –2.0V for pulse durations less than 20 ns.

5. VIH(max) = VCC+0.75V for pulse durations less than 20 ns.

6. Full device AC operation assumes a 100 μs ramp time from 0 to Vcc(min) and 200 μs wait time after Vcc stabilization.

7. Only chip enable (CE) and byte enables (BHE and BLE) need to be tied to CMOS levels to meet the ISB2 / ICCDR spec. Other inputs can be left floating.

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MoBL®, CY62126EV30

Document #: 38-05486 Rev. *E Page 4 of 13

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter Description Test Conditions VFBGA

Package

TSOP II

Package Unit

ΘJA Thermal Resistance

(Junction to Ambient)

Still Air, soldered on a 4.25 x 1.125 inch,

two-layer printed circuit board

58.85 28.2 °C/W

ΘJC Thermal Resistance

(Junction to Case)

17.01 3.4 °C/W

Figure 3. AC Test Loads and Waveforms

Parameters 2.2V - 2.7V 2.7V - 3.6V Unit

R1 16600 1103 Ohms

R2 15400 1554 Ohms

RTH 8000 645 Ohms

VTH 1.2 1.75 Volts

Data Retention Characteristics

Over the Operating Range

Parameter Description Conditions Min Typ[1] Max Unit

VDR VCC for Data Retention 1.5 V

ICCDR[7] Data Retention Current VCC= VDR, CE > VCC – 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V

Industrial 3 μA

Automotive 30 μA

tCDR[8] Chip Deselect to Data

Retention Time 0ns

tR[9] Operation Recovery Time tRC ns

Figure 4. Data Retention Waveform

VCC

OUTPUT

30 pF

INCLUDING

JIG AND

SCOPE

GND

90%

10% 90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT VTH

Equivalent to: THÉVENIN EQUIVALENT

ALL INPUT PULSES

RTH

VCC(min)

tCDR

VDR >1.5V

DATA RETENTION MODE

VCC

Notes

8. Tested initially and after any design or process changes that may affect these parameters.

9. Full device AC operation requires linear VCC ramp from VDR to VCC(min) > 100 μs.

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MoBL®, CY62126EV30

Document #: 38-05486 Rev. *E Page 5 of 13

Switching Characteristics

Over the Operating Range [10, 11]

Parameter Description 45 ns (Industrial) 55 ns (Automotive) Unit

Min Max Min Max

Read Cycle

tRC Read Cycle Time 45 55 ns

tAA Address to Data Valid 45 55 ns

tOHA Data Hold from Address Change 10 10 ns

tACE CE LOW to Data Valid 45 55 ns

tDOE OE LOW to Data Valid 22 25 ns

tLZOE OE LOW to Low Z [12] 55 ns

tHZOE OE HIGH to High Z [12, 13] 18 20 ns

tLZCE CE LOW to Low Z [12] 10 10 ns

tHZCE CE HIGH to High Z [12, 13] 18 20 ns

tPU CE LOW to Power Up 0 0 ns

tPD CE HIGH to Power Down 45 55 ns

tDBE BHE / BLE LOW to Data Valid 22 25 ns

tLZBE BHE / BLE LOW to Low Z [12] 55 ns

tHZBE BHE / BLE HIGH to High Z [12, 13] 18 20 ns

Write Cycle [14]

tWC Write Cycle Time 45 55 ns

tSCE CE LOW to Write End 35 40 ns

tAW Address Setup to Write End 35 40 ns

tHA Address Hold from Write End 0 0 ns

tSA Address Setup to Write Start 0 0 ns

tPWE WE Pulse Width 35 40 ns

tBW BHE / BLE Pulse Width 35 40 ns

tSD Data Setup to Write End 25 25 ns

tHD Data Hold from Write End 0 0 ns

tHZWE WE LOW to High Z [12, 13] 18 20 ns

tLZWE WE HIGH to Low Z [12] 10 10 ns

Notes

10. Test conditions assume signal transition time of 3 ns or less, timing reference levels of VCC(typ)/2, input pulse levels of 0 to VCC(typ), and output loading of the

specified IOL/IOH and 30-pF load capacitance.

11. AC timing parameters are subject to byte enable signals (BHE or BLE) not switching when chip is disabled. See application note AN13842 for further clarification.

12. At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.

13. tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.

14. The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE, BLE or both = VIL. All signals must be active to initiate a write and any of

these signals can terminate a write by going inactive. The data input setup and hold timing must refer to the edge of signal that terminates write.

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MoBL®, CY62126EV30

Document #: 38-05486 Rev. *E Page 6 of 13

Switching Waveforms

Figure 5. Read Cycle No. 1(Address transition controlled)[15, 16]

Figure 6. Read Cycle No. 2 (OE controlled)[16, 17]

PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

ADDRESS

DATA OUT

50%

DATA VALID

ACE

LZBE

LZCE

HIGHIMPEDANCE

HZOE

HZCE

HZBE

LZOE

DBE

DOE

IMPEDANCE

HIGH

DATA OUT

SUPPLY

CURRENT

BHE/BLE

ADDRESS

Notes

15. The device is continuously selected. OE, CE = VIL, BHE, BLE, or both = VIL.

16. WE is HIGH for read cycle.

17. Address valid before or similar to CE and BHE, BLE transition LOW.

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MoBL®, CY62126EV30

Document #: 38-05486 Rev. *E Page 7 of 13

Figure 7. Write Cycle No. 1 (WE controlled)[14, 18, 19]

Figure 8. Write Cycle No. 2 (CE controlled)[14, 18, 19]

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tWC

tHZOE

DATAIN

NOTE 20

tBW

tSCE

DATA IO

ADDRESS

BHE/BLE

tHD

tSD

tPWE

tHA

tAW

tSCE

tWC

tHZOE

DATAIN

tBW

tSA

ADDRESS

DATA IO

BHE/BLE

NOTE 20

Notes

18. Data IO is high impedance if OE = VIH.

19. If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state.

20. During this period, the IOs are in output state. Do not apply input signals.

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MoBL®, CY62126EV30

Document #: 38-05486 Rev. *E Page 8 of 13

Figure 9. Write Cycle No. 3 (WE controlled, OE LOW [19]

Figure 10. Write Cycle No. 4 (BHE/BLE controlled, OE LOW)[19]

Switching Waveforms (continued)

DATAIN

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

tBW

NOTE 20

ADDRESS

DATA IO

BHE/BLE

tWC

DATA

tSCE

PWE

tHZWE

tLZWE

NOTE 20

DATA IO

ADDRESS

BHE/BLE

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MoBL®, CY62126EV30

Document #: 38-05486 Rev. *E Page 9 of 13

Truth Table

CE WE OE BHE BLE Inputs/Outputs Mode Power

H X X X X High Z Deselect/Power Down Standby (ISB)

L X X H H High Z Output Disabled Active (ICC)

LHLLLDataOut(IO

0–IO15) Read Active (ICC)

LHLHLDataOut(IO

0–IO7);

IO8–IO15 in High Z

Read Active (ICC)

LHLLHDataOut(IO

8–IO15);

IO0–IO7 in High Z Read Active (ICC)

L H H L L High Z Output Disabled Active (ICC)

L H H H L High Z Output Disabled Active (ICC)

L H H L H High Z Output Disabled Active (ICC)

L L X L L Data In (IO0–IO15) Write Active (ICC)

L L X H L Data In (IO0–IO7);

IO8–IO15 in High Z

Write Active (ICC)

L L X L H Data In (IO8–IO15);

IO0–IO7 in High Z

Write Active (ICC)

Ordering Information

Speed

(ns) Ordering Code

Package

Diagram Package Type Operating

Range

45 CY62126EV30LL-45BVXI 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free) Industrial

CY62126EV30LL-45ZSXI 51-85087 44-pin Thin Small Outline Package II (Pb-free)

55 CY62126EV30LL-55BVXE 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free) Automotive

CY62126EV30LL-55ZSXE 51-85087 44-pin Thin Small Outline Package II (Pb-free)

Contact your local Cypress sales representative for availability of other parts.

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MoBL®, CY62126EV30

Document #: 38-05486 Rev. *E Page 10 of 13

Package Diagrams

Figure 11. 48-Ball VFBGA (6 x 8 x 1 mm) (51-85150)

A1 CORNER

0.75

Ø0.30±0.05(48X)

Ø0.25 M C A B

Ø0.05 M C

0.15(4X)

0.21±0.05

1.00 MAX

SEATING PLANE

0.55 MAX.

0.25 C

0.10 C

A1 CORNER

TOP VIEW BOTTOM VIEW

234

3.75

5.25

465231

6.00±0.10

8.00±0.10

6.00±0.10

1.875

2.625

0.26 MAX.

51-85150-*D

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