Cypress CY62137FV30 Bedienungsanleitung

Cypress Semiconductor Corporation • 198 Champion Court • San Jose,CA 95134-1709 • 408-943-2600

Document Number: 001-07141 Rev. *F Revised January 2, 2008

CY62137FV30 MoBL®

2-Mbit (128K x 16) Static RAM

Features

■Very high speed: 45 ns

■Temperature ranges

❐Industrial: –40°C to +85°C

❐Automotive-A: –40°C to +85°C

❐Automotive-E: –40°C to +125°C

■Wide voltage range: 2.20V–3.60V

■Pin compatible with CY62137CV/CV25/CV30/CV33,

CY62137V, and CY62137EV30

■Ultra low standby power

❐Typical standby current: 1μA

❐Maximum standby current: 5 μA (Industrial)

■Ultra low active power

❐Typical active current: 1.6 mA at f = 1 MHz (45 ns speed)

■Easy memory expansion with CE and OE features

■Automatic power down when deselected

■CMOS for optimum speed and power

■Byte power down feature

■Available in Pb free 48-Ball VFBGA and 44-pin TSOP II

package

Functional Description

The CY62137FV30 is a high performance CMOS static RAM

organized as 128K words by 16 bits. This device features

advanced circuit design to provide ultra low active current. This

is ideal for providing More Battery Life™ (MoBL®) in portable

applications such as cellular telephones. The device also has an

automatic power down feature that significantly reduces power

consumption by 90% when addresses are not toggling. Placing

the device into standby mode reduces power consumption by

more than 99% when deselected (CE HIGH or both BLE and

BHEare HIGH). The input and output pins (IO0through IO15) are

placed in a high impedance state in the following conditions:

■Deselected (CE HIGH)

■Outputs are disabled (OE HIGH

■Both Byte High Enable and Byte Low Enable are disabled

(BHE, BLE HIGH)

■Write operation is active (CE LOW and WE LOW)

Write to the device by taking Chip Enable (CE) and Write Enable

(WE) inputs LOW. If Byte Low Enable (BLE) is LOW, then data

from IO pins (IO0through IO7) is written into the location

specified on the address pins (A0through A16). If Byte High

Enable (BHE) is LOW, then data from IO pins (IO8through IO15)

is written into the location specified on the address pins (A0

through A16).

Read from the device by taking Chip Enable (CE) and Output

Enable (OE) LOW, while forcing the Write Enable (WE) HIGH. If

Byte Low Enable (BLE) is LOW, then data from the memory

location specified by the address pins appear on IO0to IO7. If

Byte High Enable (BHE) is LOW, then data from memory

appears on IO8to IO15. See the “Truth Table” on page 9 for a

complete description of read and write modes.

For best practice recommendations, refer to the Cypress

application note AN1064, SRAM System Guidelines.

128K x 16

RAM Array IO0–IO7

ROW DECODER

COLUMN DECODER

A11

A12

A13

A14

A15

SENSE AMPS

DATA IN DRIVERS

A3IO8–IO15

BHE

A16

A10

BLE

BHE

BLE

POWER DOWN

CIRCUIT

Logic Block Diagram

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CY62137FV30 MoBL®

Document Number: 001-07141 Rev. *F Page 2 of 12

Product Portfolio

Product Range VCC Range (V) Speed

(ns)

Power Dissipation

Operating ICC (mA) Standby ISB2

(μA)

f = 1MHz f = fmax

Min Typ [1] Max Typ [1] Max Typ [1] Max Typ [1] Max

CY62137FV30LL Ind’l/Auto-A 2.2V 3.0V 3.6V 45 1.6 2.5 13 18 1 5

Auto-E 2.2V 3.0V 3.6V 55 2 3 15 25 1 20

Pin Configuration

Figure 1. 48-Ball VFBGA Pinout [2, 3] Figure 2. 44-Pin TSOP II [2]

A11

A10

A3CE

IO10

IO8

IO9

IO11

IO13

IO12

IO14

IO15

VSS

IO0

BHE

BLE

IO2

IO1

IO3

IO4

IO5IO6

IO7

A15

A14

A13

A12

NC NC

326

A16

VCC

VCC VSS

14 31

15 29

19 27

21 23

BHE

BLE

Notes

1. Typical values are included for reference only and are not guaranteed or tested. Typical values are measured at VCC = VCC(typ), TA= 25°C.

2. NC pins are not connected on the die.

3. Pins D3, H1, G2, and H6 in the VFBGA package are address expansion pins for 4 Mb, 8 Mb, 16 Mb, and 32 Mb, respectively.

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CY62137FV30 MoBL®

Document Number: 001-07141 Rev. *F Page 3 of 12

Maximum Ratings

Exceeding the maximum ratings may impair the useful life of the

device. These user guidelines are not tested.

Storage Temperature ................................ –65°C to + 150°C

Ambient Temperature with

Power Applied .......................................... –55°C to + 125°C

Supply Voltage to Ground

Potential ...........................................................-0.3Vto3.9V

DC Voltage Applied to Outputs

in High Z state [4, 5]............................................-0.3V to 3.9V

DC Input Voltage [4, 5].......................................–0.3Vto3.9V

Output Current into Outputs (LOW) ............................20 mA

Static Discharge Voltage ......................................... > 2001V

(MIL–STD–883, Method 3015)

Latch up Current ....................................................> 200 mA

Operating Range

Device Range Ambient

Temperature VCC [6]

CY62137FV30LL Ind’l/Auto-A –40°C to +85°C 2.2V to 3.6V

Auto-E –40°C to +125°C

Electrical Characteristics

Over the Operating Range

Parameter Description Test Conditions 45 ns (Ind’l/Auto-A) 55 ns (Auto-E) Unit

Min Typ[1] Max Min Typ[1] Max

VOH Output HIGH Voltage 2.2 < VCC < 2.7 IOH = –0.1 mA 2.0 2.0 V

2.7 < VCC < 3.6 IOH = –1.0 mA 2.4 2.4 V

VOL Output LOW Voltage 2.2 < VCC < 2.7 IOL = 0.1 mA 0.4 0.4 V

2.7 < VCC < 3.6 IOL = 2.1mA 0.4 0.4 V

VIH Input HIGH Voltage 2.2 < VCC < 2.7 1.8 VCC + 0.3 1.8 VCC + 0.3 V

2.7 < VCC < 3.6 2.2 VCC + 0.3 2.2 VCC + 0.3 V

VIL Input LOW Voltage 2.2 < VCC < 2.7 –0.3 0.6 –0.3 0.6 V

2.7 < VCC < 3.6 –0.3 0.8 –0.3 0.8 V

IIX Input Leakage Current GND <VI< VCC –1 +1 –4 +4 μA

IOZ Output Leakage

Current GND <VO <VCC,Output disabled –1 +1 –4 +4 μA

ICC VCC Operating Supply

Current f = fmax = 1/tRC VCC = VCC(max)

IOUT = 0 mA

CMOS levels

13 18 15 25 mA

f = 1 MHz 1.6 2.5 2 3

ISB1 Automatic CE Power

Down Current – CMOS

Inputs

CE > VCC – 0.2V,

VIN > VCC – 0.2V, VIN <0.2V

f = fmax (address and data only),

f=0(OE,WE,BHE,andBLE),VCC=3.60V

15 120μA

ISB2 [7] Automatic CE Power

Down Current – CMOS

Inputs

CE > VCC – 0.2V,

VIN > VCC – 0.2V or VIN < 0.2V,

f = 0, VCC = 3.60V

15 120μA

Capacitance

Tested initially and after any design or process changes that may affect these parameters.

Parameter Description Test Conditions Max Unit

CIN Input Capacitance TA= 25°C,f = 1 MHz,

VCC = VCC(typ) 10 pF

COUT Output Capacitance 10 pF

Notes

4. VIL(min) = –2.0V for pulse durations less than 20 ns.

5. VIH(max)=VCC+0.75V for pulse durations less than 20 ns.

6. Full device AC operation assumes a minimum of 100 μs ramp time from 0 to VCC(min) and 200 μs wait time after VCC stabilization.

7. Only chip enable (CE) and byte enables (BHE and BLE) are tied to CMOS levels to meet the ISB2 / ICCDR specification. Other inputs can be left floating.

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CY62137FV30 MoBL®

Document Number: 001-07141 Rev. *F Page 4 of 12

Thermal Resistance

Tested initially and after any design or process changes that may affect these parameters.

Parameter Description Test Conditions VFBGA TSOP II Unit

ΘJA Thermal Resistance

(Junction to Ambient) Still air, soldered on a 3 × 4.5 inch,

two layer printed circuit board 75 77 °C/W

ΘJC Thermal Resistance

(Junction to Case) 10 13 °C/W

AC Test Loads and Waveforms

Figure 3. AC Test Loads and Waveform

Parameters 2.5V (2.2V to 2.7V) 3.0V (2.7V to 3.6V) Unit

R1 16667 1103 Ω

R2 15385 1554 Ω

RTH 8000 645 Ω

VTH 1.20 1.75 V

Data Retention Characteristics

Over the Operating Range

Parameter Description Conditions Min Typ [1] Max Unit

VDR VCC for Data Retention 1.5 V

ICCDR [7] Data Retention Current VCC = 1.5V, CE > VCC - 0.2V,

VIN > VCC -0.2VorVIN < 0.2V Ind’l/Auto-A 4 μA

Auto-E 12

tCDR [8] ChipDeselect to DataRetentionTime 0 ns

tR [9] Operation Recovery Time tRC ns

Data Retention Waveform Figure 4. Data Retention Waveform [10]

VCC

OUTPUT

30 pF GND 90%

10% 90%

10%

Rise Time = 1 V/ns Fall Time = 1 V/ns

OUTPUT

Equivalent to: THÉVENIN EQUIVALENT

ALL INPUT PULSES

RTH

INCLUDING

JIG AND

SCOPE

VCC(min)

tCDR

VDR >1.5V

DATA RETENTION MODE

VCC

CE or

BHE.BLE

Notes

8. Tested initially and after any design or process changes that may affect these parameters.

9. Full device operation requires linear VCC ramp from VDR to VCC(min) >100 μs or stable at VCC(min) >100 μs.

10.BHE.BLE is the AND of both BHE and BLE. Deselect the chip by either disabling chip enable signals or by disabling both BHE and BLE.

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CY62137FV30 MoBL®

Document Number: 001-07141 Rev. *F Page 5 of 12

Switching Characteristics

Over the Operating Range [11, 12]

Parameter Description 45 ns (Ind’l/Auto-A) 55 ns (Auto-E) Unit

Min Max Min Max

Read Cycle

tRC Read Cycle Time 45 55 ns

tAA Address to Data Valid 45 55 ns

tOHA Data Hold From Address Change 10 10 ns

tACE CE LOW to Data Valid 45 55 ns

tDOE OE LOW to Data Valid 22 25 ns

tLZOE OE LOW to Low Z [13] 55ns

tHZOE OE HIGH to High Z [13, 14] 18 20 ns

tLZCE CE LOW to Low Z [13] 10 10 ns

tHZCE CE HIGH to High Z [13, 14] 18 20 ns

tPU CE LOW to Power Up 00ns

tPD CE HIGH to Power Down 45 55 ns

tDBE BLE/BHE LOW to Data Valid 45 55 ns

tLZBE BLE/BHE LOW to Low Z [13, 15] 510ns

tHZBE BLE/BHE HIGH to High Z [13, 14] 18 20 ns

Write Cycle [16]

tWC Write Cycle Time 45 55 ns

tSCE CE LOW to Write End 35 40 ns

tAW Address Setup to Write End 35 40 ns

tHA Address Hold from Write End 0 0 ns

tSA Address Setup to Write Start 0 0 ns

tPWE WE Pulse Width 35 40 ns

tBW BLE/BHE LOW to Write End 35 40 ns

tSD Data Setup to Write End 25 25 ns

tHD Data Hold From Write End 0 0 ns

tHZWE WE LOW to High Z [13, 14] 18 20 ns

tLZWE WE HIGH to Low Z [13] 10 10 ns

Notes

11. Test conditions for all parameters, other than tri-state parameters,assume signal transition time of 3 ns (1V/ns) or less, timing reference levels of VCC(typ)/2, input pulse

levels of 0 to VCC(typ), and output loading of the specified IOL/IOH as shown in “AC Test Loads and Waveforms” on page 4.

12.AC timing parameters are subject to byte enablesignals (BHE or BLE)notswitchingwhen chip is disabled. Please see application note AN13842 for further clarification.

13.At any temperature and voltage condition, tHZCE is less than tLZCE, tHZBE is less than tLZBE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any device.

14.tHZOE, tHZCE, tHZBE, and tHZWE transitions are measured when the outputs enter a high impedance state.

15.If both byte enables are toggled together, this value is 10 ns.

16.The internal write time of the memory is defined by the overlap of WE, CE = VIL, BHE and/or BLE = VIL. All signals are ACTIVE to initiate a write and any of these

signals terminate a write by going INACTIVE. The data input setup and hold timing are referenced to the edge of the signal that terminates the write.

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CY62137FV30 MoBL®

Document Number: 001-07141 Rev. *F Page 6 of 12

Switching Waveforms

Figure 5. Read Cycle 1: Address Transition Controlled [17, 18]

Figure 6. Read Cycle 2: OE Controlled [18, 19]

PREVIOUS DATA VALID DATA VALID

tRC

tAA

tOHA

ADDRESS

DATA OUT

50%

DATA VALID

ACE

LZBE

LZCE

HIGHIMPEDANCE

HZOE

HZCE

HZBE

LZOE

DBE

DOE

IMPEDANCE

HIGH

DATA OUT

SUPPLY

CURRENT

BHE/BLE

ADDRESS

Notes

17.The device is continuously selected. OE, CE = VIL, BHE and/or BLE = VIL.

18.WE is HIGH for read cycle.

19.Address valid before or similar to CE and BHE, BLE transition LOW.

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CY62137FV30 MoBL®

Document Number: 001-07141 Rev. *F Page 7 of 12

Figure 7. Write Cycle 1: WE Controlled [16, 20, 21]

Figure 8. Write Cycle 2: CE Controlled [16, 20, 21]

Switching Waveforms (continued)

tHD

tSD

tPWE

tSA

tHA

tAW

tWC

tHZOE

DATAIN

NOTE 22

tBW

tSCE

DATA IO

ADDRESS

BHE/BLE

tHD

tSD

tPWE

tHA

tAW

tSCE

tWC

tHZOE

DATAIN

tBW

tSA

ADDRESS

DATA IO

BHE/BLE

NOTE 22

Notes

20.Data IO is high impedance if OE = VIH.

21.If CE goes HIGH simultaneously with WE = VIH, the output remains in a high impedance state.

22.During this period, the IOs are in output state. Do not apply input signals.

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CY62137FV30 MoBL®

Document Number: 001-07141 Rev. *F Page 8 of 12

Figure 9. Write Cycle 3: WE Controlled, OE LOW [21]

Figure 10. Write Cycle 4: BHE/BLE Controlled, OE LOW [21]

Switching Waveforms (continued)

DATAIN

tHD

tSD

tLZWE

tPWE

tSA

tHA

tAW

tSCE

tWC

tHZWE

tBW

NOTE 22

ADDRESS

DATA IO

BHE/BLE

tWC

DATA

tSCE

PWE

tHZWE

tLZWE

NOTE 22

DATA IO

ADDRESS

BHE/BLE

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CY62137FV30 MoBL®

Document Number: 001-07141 Rev. *F Page 9 of 12

Truth Table

CE WE OE BHE BLE Inputs or Outputs Mode Power

HXXXXHighZ DeselectorPowerDown Standby(I

SB)

X X X H H High Z Deselect or Power Down Standby (ISB)

L H L L L Data Out (IO0–IO15)Read Active(I

CC)

LHLHLDataOut(IO

0–IO7);

IO8–IO15 in High Z Read Active (ICC)

L H L L H Data Out (IO8–IO15);

IO0–IO7 in High Z Read Active (ICC)

L H H L L High Z Output Disabled Active (ICC)

L H H H L High Z Output Disabled Active (ICC)

L H H L H High Z Output Disabled Active (ICC)

L L X L L Data In (IO0–IO15) Write Active (ICC)

L L X H L Data In (IO0–IO7);

IO8–IO15 in High Z Write Active (ICC)

L L X L H Data In (IO8–IO15);

IO0–IO7 in High Z Write Active (ICC)

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CY62137FV30 MoBL®

Document Number: 001-07141 Rev. *F Page 10 of 12

Ordering Information

Speed

(ns) Ordering Code Package

Diagram Package Type Operating

Range

45 CY62137FV30LL-45BVI 51-85150 48-Ball VFBGA Industrial

CY62137FV30LL-45BVXI 48-Ball VFBGA (Pb-free)

CY62137FV30LL-45ZSXI 51-85087 44-Pin TSOP II (Pb-free)

45 CY62137FV30LL-45ZSXA 51-85087 44-Pin TSOP II (Pb-free) Automotive-A

55 CY62137FV30LL-55ZSXE 51-85087 44-Pin TSOP II (Pb-free) Automotive-E

Contact your local Cypress sales representative for availability of these parts.

Package Diagram

Figure 11. 48-Ball VFBGA (6 x 8 x 1 mm)

A1 CORNER

0.75

Ø0.30±0.05(48X)

Ø0.25 M C A B

Ø0.05 M C

0.15(4X)

0.21±0.05

1.00 MAX

SEATING PLANE

0.55 MAX.

0.25 C

0.10 C

A1 CORNER

TOP VIEW BOTTOM VIEW

234

3.75

5.25

465231

6.00±0.10

8.00±0.10

6.00±0.10

1.875

2.625

0.26 MAX.

51-85150-*D

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