NXP Semiconductors BGA2003 Bedienungsanleitung

DATA SHEET

Product specification

Supersedes data of 1999 Jul 23 2010 Sep 13

DISCRETE SEMICONDUCTORS

BGA2003

Silicon MMIC amplifier

M3D124

2010 Sep 13 2

NXP Semiconductors Product specification

Silicon MMIC amplifier BGA2003

FEATURES

•Low current

•Very high power gain

•Low noise figure

•Integrated temperature compensated biasing

•Control pin for adjustment bias current

•Supply and RF output pin combined.

APPLICATIONS

•RF front end

•Wideband applications, e.g. analog and digital cellular

telephones, cordless telephones (PHS, DECT, etc.)

•Low noise amplifiers

•Satellite television tuners (SATV)

•High frequency oscillators.

DESCRIPTION

Silicon MMIC amplifier consisting of an NPN double

polysilicontransistorwithintegratedbiasingforlowvoltage

applications in a plastic, 4-pin SOT343R package.

PINNING

PIN DESCRIPTION

1GND

2RFin

3 CTRL (bias current control)

S+ RF out

handbook, halfpage

Top view MAM427

BIAS

CIRCUIT

CTRL

RFin GND

VS+RFout

Marking code: A3*

Fig.1 Simplified outline (SOT343R) and symbol.

* = - : made in Hong Kong

* = p : made in Hong Kong

* = t : made in Malaysia

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

VSDC supply voltage RF input AC coupled −4.5 V

ISDC supply current VVS-OUT = 2.5 V; ICTRL =1mA;

RF input AC coupled 11 −mA

MSG maximum stable gain VVS-OUT = 2.5 V; f = 1800 MHz;

Tamb =25°C16 −dB

NF noise figure VVS-OUT = 2.5 V; f = 1800 MHz; ΓS=Γopt 1.8 −dB

2010 Sep 13 3

NXP Semiconductors Product specification

Silicon MMIC amplifier BGA2003

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

THERMAL CHARACTERISTICS

CHARACTERISTICS

RF input AC coupled; Tj=25°C; unless otherwise specified.

Note

1. See application note RNR-T45-99-B-0514.

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VSsupply voltage RF input AC coupled −4.5 V

VCTRL voltage on control pin −2V

ISsupply current (DC) forced by DC voltage on RF input

or ICTRL

−30 mA

ICTRL control current −3mA

Ptot total power dissipation Ts≤100 °C−135 mW

Tstg storage temperature −65 +150 °C

Tjoperating junction temperature −150 °C

SYMBOL PARAMETER VALUE UNIT

Rth j-s thermal resistance from junction to soldering point 350 K/W

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

ISsupply current VVS-OUT = 2.5 V; ICTRL = 0.4 mA 3 4.5 6 mA

VVS-OUT = 2.5 V; ICTRL =1.0mA 8 11 15 mA

MSG maximum stable gain VVS-OUT = 2.5 V; IVS-OUT =10mA;

f=900MHz −24 −dB

VVS-OUT = 2.5 V; IVS-OUT =10mA;

f=1800MHz −16 −dB

|s21|2insertion power gain VVS-OUT = 2.5 V; IVS-OUT =10mA;

f=900MHz 18 19 −dB

VVS-OUT = 2.5 V; IVS-OUT =10mA;

f=1800MHz 13 14 −dB

s12 isolation VVS-OUT = 2.5 V; IVS-OUT =0;

f=900MHz −26 −dB

VVS-OUT = 2.5 V; IVS-OUT =0;

f=1800MHz −20 −dB

NF noise figure VVS-OUT = 2.5 V; IVS-OUT =10mA;

f=900MHz;ΓS=Γopt

−1.8 2 dB

VVS-OUT = 2.5 V; IVS-OUT =10mA;

f=1800MHz;ΓS=Γopt

−1.8 2 dB

IP3(in) input intercept point; note 1 VVS-OUT = 2.3 V; IVS-OUT =3.6mA;

f=900MHz −−6.5 −dBm

VVS-OUT = 2.3 V; IVS-OUT =3.5mA;

f=1800MHz −−4.8 −dBm

2010 Sep 13 4

NXP Semiconductors Product specification

Silicon MMIC amplifier BGA2003

handbook, halfpage

MGS536

100 pF R1

RF in

RCTRL

VCTRL

RF out

BGA2003

Fig.2 Typical application circuit.

handbook, halfpage

0 50 100 200

200

150

100

MGS537

150 Ts(°C)

Ptot

(mW)

Fig.3 Power derating.

handbook, halfpage

0 0.5 1 2

2.5

MGS538

1.5

0.5

VCTRL (V)

ICTRL

(mA)

Fig.4 Control current as a function of the control

voltage on pin 3; typical values.

ICTRL =(V

CTRL −0.83)/296.

handbook, halfpage

0 2.5

MGS539

0.5 1 1.5 2

IVS-OUT

(mA)

ICTRL (mA)

Fig.5 Bias current as a function of the control

current; typical values.

VS-OUT =2.5V.

2010 Sep 13 5

NXP Semiconductors Product specification

Silicon MMIC amplifier BGA2003

VS-OUT =2.5V.

(1) ICTRL =0.2mA.

(2) ICTRL =0.4mA.

(3) ICTRL =1.0mA.

(4) ICTRL =1.5mA.

(5) ICTRL =2.0mA.

(6) ICTRL =2.5mA.

handbook, halfpage

−40 0 40 120

MGS540

Tamb (°C)

IVS-OUT

(mA)

(2)

(3)

(4)

(5)

(6)

(1)

Fig.6 Bias current (IVS-OUT) as a function of the

ambient temperature with ICTRL as

parameter; typical values.

handbook, halfpage

015

MGS541

234

VVS-OUT (V)

IVS-OUT

(mA)

Fig.7 Bias current (IVS-OUT) as a function of the

voltage at the output pin (VVS-OUT); typical

values.

ICTRL =1mA.

handbook, halfpage

01020

MGS542

IVS-OUT (mA)

(GHz)

Fig.8 Transition frequency as a function of the

bias current (IVS-OUT); typical values.

VVS-OUT = 2.5 V; f = 1000 MHz.

handbook, halfpage

0101525

gain

(dB)

MGS543

520

IVS-OUT (mA)

Gmax

GUM

MSG

Fig.9 Gain as a function of the bias current

(IVS-OUT); typical values.

VVS-OUT = 2.5 V; f = 900 MHz.

2010 Sep 13 6

NXP Semiconductors Product specification

Silicon MMIC amplifier BGA2003

handbook, halfpage

0101525

gain

(dB)

MGS544

5 20

IVS-OUT (mA)

Gmax

GUM

Fig.10 Gain as a function of the bias current

(IVS-OUT); typical values.

VVS-OUT = 2.5 V; f = 1800 MHz.

handbook, halfpage

MGS545

102103104

gain

(dB)

f (MHz)

MSG

Gmax

GUM

Fig.11 Gain as a function of frequency; typical

values.

VVS-OUT = 2.5 V; IVS-OUT =10mA.

handbook, halfpage

MGS546

11010

1.5

0.5

2.5

NFmin

(dB)

IVS-OUT (mA)

(3)

(2)

(4)

(1)

Fig.12 Minimum noise figure as a function of the

bias current (IVS-OUT); typical values.

(1) f = 2400 MHz.

(2) f = 1800 MHz.

(3) f = 1000 MHz.

(4) f = 900 MHz.

2010 Sep 13 7

NXP Semiconductors Product specification

Silicon MMIC amplifier BGA2003

handbook, full pagewidth

MGS547

0.2

0.6

0.4

0.8

1.0

+0.2

−0.2

−0.5

−1

−2

−5

0.2 1 25

180°

−135°

−90°

−45°

0°

45°

135°unstable

region load

unstable region

source

Γopt

(2)

(4)

(5)

(3)

(6)

(1)

+0.5

0.5

90°

Fig.13 Noise, stability and gain circles; typical values.

f=900MHz;V

VS-OUT =2.5V;

IVS-OUT =10mA;Z

o=50Ω.

(1) G = 23 dB.

(2) G = 22 dB.

(3) G =21 dB.

(4) NF = 1.8 dB.

(5) NF = 2 dB.

(6) NF = 2.2 dB.

handbook, full pagewidth

MGS548

0.2

0.6

0.4

0.8

1.0

+0.5

+0.2

−0.2

−0.5

−1

−2

−5

125

180°

−135°

−90°

−45°

0°

90°

135°

unstable

region load

unstable region

source

Γopt

(3)

(2)

(4)

(6)

(7)

(1)

(5)

45°

0.2 0.5

Fig.14 Noise, stability and gain circles; typical values.

f = 1800 MHz; VVS-OUT =2.5V;

IVS-OUT =10mA;Z

o=50Ω.

(1) Gmax =16.1dB.

(2) G = 16 dB.

(3) G = 15 dB.

(4) G = 14 dB.

(5) NF = 1.9 dB.

(6) NF = 2.1 dB.

(7) NF = 2.3 dB.

2010 Sep 13 8

NXP Semiconductors Product specification

Silicon MMIC amplifier BGA2003

handbook, full pagewidth

MGS549

0.2

0.6

0.4

0.8

1.0

+0.5

+0.2

−0.2

−0.5

−1

−2

−5

0.2 0.5 1 25

180

−135

−90

−45

135

100 MHz

200 MHz

500 MHz

1 GHz

2 GHz

3 GHz

Fig.15 Common emitter input reflection coefficient (s11); typical values.

VVS-OUT = 2.5 V; IVS-OUT =10mA;Z

o=50Ω.

handbook, full pagewidth

MGS550

20 16 12 8 4

180°

−135°

−90°

−45°

0°

45°

90°

135°

100 MHz

200 MHz

500 MHz

900 MHz

1 GHz

1.8 GHz

3 GHz

Fig.16 Common emitter forward transmission coefficient (s21); typical values.

VVS-OUT = 2.5 V; IVS-OUT =10mA;Z

o=50Ω.

2010 Sep 13 9

NXP Semiconductors Product specification

Silicon MMIC amplifier BGA2003

handbook, full pagewidth

MGS551

0.5 0.4 0.3 0.2 0.1

180°

−135°

−90°

−45°

0°

45°

90°

135°

100 MHz

3 GHz

Fig.17 Common emitter reverse transmission coefficient (s12); typical values.

VVS-OUT = 2.5 V; IVS-OUT =10mA;Z

o=50Ω.

handbook, full pagewidth

MGS552

0.2

0.6

0.4

0.8

1.0

+0.5

+0.2

−0.2

−0.5

−1

−2

−5

0.2 0.5 1 25

180

−135

−90

−45

135

100 MHz

200 MHz

900 MHz

500 MHz

1 GHz

1.8 GHz

3 GHz

Fig.18 Common emitter output reflection coefficient (s22); typical values.

VVS-OUT = 2.5 V; IVS-OUT =10mA;Z

o=50Ω.

2010 Sep 13 10

NXP Semiconductors Product specification

Silicon MMIC amplifier BGA2003

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT343R

detail X

vMA

0 1 2 mm

scale

Plastic surface-mounted package; reverse pinning; 4 leads SOT343

wMB

97-05-21

06-03-16

UNIT A1

max bpcD E

b1HELpQwv

mm 0.1

1.1

0.8 0.4

0.3 0.25

0.10

0.7

0.5 2.2

1.8 1.35

1.15

2.2

2.0

1.3

0.2

0.10.21.15

DIMENSIONS (mm are the original dimensions)

0.45

0.15 0.23

0.13

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