NXP Semiconductors SA58670A Betriebshandbuch

1. General description

The SA58670A is a stereo, ﬁlter-free class-D audio ampliﬁer which is available in an

HVQFN20 package with the exposed Die Attach Paddle (DAP).

The SA58670A features independent shutdown controls for each channel. The gain may

be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity

to noise and RF rectiﬁcation is increased by high PSRR and differential circuit topology.

Fast start-up time and small package makes it an ideal choice for both cellular handsets

and PDAs.

The SA58670A delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8 Ω. It

delivers 2.1 W/channel at 5.0 V into 4 Ω. The maximum power efﬁciency is excellent at

70 % to 74 % into 4 Ωand 84 % to 88 % into 8 Ω. The SA58670A provides thermal and

short-circuit shutdown protection.

2. Features

nOutput power:

u2.1 W/channel into 4 Ωat 5.0 V

u1.4 W/channel into 8 Ωat 5.0 V

u720 mW/channel into 8 Ωat 3.6 V

nSupply voltage: 2.5 V to 5.5 V

nIndependent shutdown control for each channel

nSelectable gain: 6 dB, 12 dB, 18 dB and 24 dB

nHigh SVRR: −77 dB at 217 Hz

nFast start-up time: 3.5 ms

nLow supply current

nLow shutdown current

nShort-circuit and thermal protection

nSpace savings with 4 mm ×4 mm HVQFN20 package

nLow junction to ambient thermal resistance of 24 K/W with exposed DAP

3. Applications

nWireless and cellular handset and PDA

nPortable DVD player

nUSB speaker

nNotebook PC

nPortable radio and gaming

SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

Rev. 02 — 23 October 2008 Product data sheet

Product data sheet Rev. 02 — 23 October 2008 2 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

nEducational toy

4. Ordering information

5. Block diagram

Table 1. Ordering information

Type number Package

Name Description Version

SA58670ABS HVQFN20 plastic thermal enhanced very thin quad ﬂat package;

no leads; 20 terminals; body 4 ×4×0.85 mm SOT917-1

Refer to Table 6 for gain selection.

Fig 1. Block diagram

002aad663

SA58670A

SDR

INRP

INRN GAIN

ADJUST

6, 10

n.c.

right input PWM H-

BRIDGE

OUTRP

3, 13 PVDD

OUTRN

VDD

9 AVDD VDD

4, 12 PGND

18 AGND

INTERNAL

OSCILLATOR

INLP

INLN GAIN

ADJUST

left input PWM H-

BRIDGE

OUTLP

OUTLN

300 kΩ

SDL

300 kΩ

BIAS

CIRCUITRY

GND

SHORT-CIRCUIT

PROTECTION

Product data sheet Rev. 02 — 23 October 2008 3 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

6. Pinning information

6.1 Pinning

6.2 Pin description

(1) Exposed Die Attach Paddle (DAP).

Fig 2. Pin conﬁguration for HVQFN20

002aad664

SA58670ABS

Transparent top view

OUTRN

PGND

OUTLN

PGND

PVDD PVDD

OUTLP OUTRP

G1 G0

n.c.

SDL

SDR

AVDD

n.c.

INLP

INLN

AGND

INRN

INRP

511

412

313

214

115

terminal 1

index area

DAP(1)

Table 2. Pin description

Symbol Pin Description

G1 1 gain select input 1

OUTLP 2 left channel positive output

PVDD 3 power supply voltage (level same as AVDD)

PGND 4 power ground

OUTLN 5 left channel negative output

n.c. 6 not connected

SDL 7 left channel shutdown input (active LOW)

SDR 8 right channel shutdown input (active LOW)

AVDD 9 analog supply voltage (level same as PVDD)

n.c. 10 not connected

OUTRN 11 right channel negative output

PGND 12 power ground

PVDD 13 power supply voltage (level same as AVDD)

OUTRP 14 right channel positive output

G0 15 gain select input 0

INRP 16 right channel positive input

INRN 17 right channel negative input

AGND 18 analog ground

Product data sheet Rev. 02 — 23 October 2008 4 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

7. Limiting values

[1] VDD is the supply voltage on pins PVDD and pin AVDD.

GND is the voltage ground on pins PGND and pin AGND.

INLN 19 left channel negative input

INLP 20 left channel positive input

- (DAP) exposed die attach paddle; connect to ground plane heat spreader

Table 2. Pin description

…continued

Symbol Pin Description

Table 3. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

[1]

Symbol Parameter Conditions Min Max Unit

VDD supply voltage Active mode −0.3 +6.0 V

Shutdown mode −0.3 +7.0 V

VIinput voltage pin SDL GND VDD V

pin SDR GND VDD V

other pins −0.3 VDD + 0.3 V

P power dissipation derating factor 41.6 mW/K

Tamb =25°C - 5.2 W

Tamb =75°C - 3.12 W

Tamb =85°C - 2.7 W

Tamb ambient temperature operating in free air −40 +85 °C

Tjjunction temperature operating −40 +150 °C

Tstg storage temperature −65 +85 °C

Vesd electrostatic discharge

voltage human body model ±2000 - V

machine model ±200 - V

Product data sheet Rev. 02 — 23 October 2008 5 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

8. Static characteristics

[1] VDD is the supply voltage on pins PVDD and pin AVDD.

GND is the ground supply voltage on pins PGND and pin AGND.

Table 4. Static characteristics

amb

=25

C; unless otherwise speciﬁed

[1]

Symbol Parameter Conditions Min Typ Max Unit

VDD supply voltage operating 2.5 - 5.5 V

IDD supply current VDD = 2.5 V; no load - 4 6 mA

VDD = 3.6 V; no load - 5 7.5 mA

VDD = 5.5 V; no load - 6 9 mA

IDD(sd) shutdown mode supply current no input signal;

VSDR =V

SDL = GND - 10 1000 nA

PSRR power supply rejection ratio VDD = 2.5 V to 5.5 V - −75 −55 dB

Vi(cm) common-mode input voltage 0.5 - VDD −0.8 V

CMRR common mode rejection ratio inputs are shorted together;

VDD = 2.5 V to 5.5 V -−69 −50 dB

VIH HIGH-level input voltage VDD = 2.5 V to 5.5 V;

pins SDL, SDR, G0, G1 1.3 - VDD V

VIL LOW-level input voltage VDD = 2.5 V to 5.5 V;

pins SDL, SDR, G0, G1 0 - 0.35 V

IIH HIGH-level input current VDD = 5.5 V; VI=V

DD --50 µA

IIL LOW-level input current VDD = 5.5 V; VI=0V --5 µA

fsw switching frequency VDD = 2.5 V to 5.5 V 250 300 350 kHz

Gv(cl) closed-loop voltage gain VG0 = VG1 = 0.35 V 5.5 6 6.5 dB

VG0 = VDD; VG1 = 0.35 V 11.5 12 12.5 dB

VG0 = 0.35 V; VG1 = VDD 17.5 18 18.5 dB

VG0 = VG1 = VDD 23.5 24 24.5 dB

Pins OUTLP, OUTLN, OUTRP and OUTRN

RDSon drain-source on-state resistance VDD = 2.5 V - 700 - mΩ

VDD = 3.6 V - 570 - mΩ

VDD = 5.5 V - 500 - mΩ

|VO(offset)|output offset voltage measureddifferentially;inputs

AC grounded; Gv(cl) = 6 dB;

VDD = 2.5 V to 5.5 V

- 5 10 mV

Zo(sd) shutdown mode output impedance VSDR = VSDL = 0.35 V - 2 - kΩ

Product data sheet Rev. 02 — 23 October 2008 6 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

9. Dynamic characteristics

[1] VDD is the supply voltage on pins PVDD and pin AVDD.

Table 5. Dynamic characteristics

amb

=25

C; R

Ω

; unless otherwise speciﬁed

[1]

Symbol Parameter Conditions Min Typ Max Unit

Pooutput power per channel; f = 1 kHz; THD+N = 10 %

RL=8Ω; VDD = 3.6 V - 0.72 - W

RL=8Ω; VDD = 5.0 V - 1.4 - W

RL=4Ω; VDD = 5.0 V - 2.1 - W

THD+N total harmonic

distortion-plus-noise VDD = 5.0 V; Gv(cl) = 6 dB; f=1kHz

Po= 0.5 W - 0.11 - %

Po= 1.0 W - 0.14 - %

SVRR supply voltage ripple

rejection Gv(cl) = 6 dB; f = 217 Hz

VDD = 3.6 V - −73 - dB

VDD = 5.0 V - −77 - dB

CMRR common mode rejection

ratio VDD = 5.0 V; Gv(cl) = 6 dB; f = 217 Hz - −69 - dB

Ziinput impedance Gv(cl) = 6 dB - 28.1 - kΩ

Gv(cl) = 12 dB - 17.3 - kΩ

Gv(cl) = 18 dB - 9.8 - kΩ

Gv(cl) = 24 dB - 5.2 - kΩ

td(sd-startup) delay time from

shutdown to start-up VDD = 3.6 V - 3.5 - ms

Vn(o) output noise voltage VDD = 3.6 V; f = 20 Hz to 20 kHz;

inputs are AC grounded

no weighting - 35 - µV

A weighting - 27 - µV

Product data sheet Rev. 02 — 23 October 2008 7 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

10. Typical performance curves

a. Gv(cl) =24dB

b. Gv(cl) = 6 dB.

fi= 1 kHz.

(1) VDD = 2.5 V.

(2) VDD = 3.6 V.

(3) VDD = 5.0 V.

Fig 3. Total harmonic distortion-plus-noise as a function of output power; RL=8Ω

001aah484

Po(W)

10−510110−1

10−410−2

10−3

10−1

102

10−2

THD+N

(%)

(1) (2) (3)

001aah485

Po(W)

10−510110−1

10−410−2

10−3

10−1

102

10−2

THD+N

(%)

(1) (2) (3)

Product data sheet Rev. 02 — 23 October 2008 8 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

a. Gv(cl) =24dB.

b. Gv(cl) = 6 dB.

fi= 1 kHz.

(1) VDD = 2.5 V.

(2) VDD = 3.6 V.

(3) VDD = 5.0 V.

Fig 4. Total harmonic distortion-plus-noise as a function of output power; RL=4Ω

001aah486

Po(W)

10−510110−1

10−410−2

10−3

10−1

102

10−2

THD+N

(%)

(1) (2) (3)

001aah487

Po(W)

10−510110−1

10−410−2

10−3

10−1

102

10−2

THD+N

(%) (1) (2) (3)

Product data sheet Rev. 02 — 23 October 2008 9 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

(1) Po= 350 mW; Vi= 590 mV (RMS).

(2) Po= 240 mW; Vi= 490 mV (RMS).

(3) Po= 120 mW; Vi= 346 mV (RMS).

a. RL=4Ω

(1) Po= 260 mW; Vi= 721.1 mV (RMS).

(2) Po= 180 mW; Vi= 600 mV (RMS).

(3) Po= 90 mW; Vi= 424.3 mV (RMS).

b. RL=8Ω

Gv(cl) =6dB.

Fig 5. Total harmonic distortion-plus-noise as a function of frequency; VDD = 2.5 V

001aah488

f (Hz)

10 105

104

102103

10−1

10−2

10−3

THD+N

(%)

(1)

(2)

(3)

001aah489

f (Hz)

10 105

104

102103

10−1

10−2

10−3

THD+N

(%) (1)

(2)

(3)

Product data sheet Rev. 02 — 23 October 2008 10 of 24

NXP Semiconductors SA58670A

2.1 W/channel stereo class-D audio ampliﬁer

(1) Po= 825 mW; Vi= 908.3 mV (RMS).

(2) Po= 550 mW; Vi= 741.6 mV (RMS).

(3) Po= 275 mW; Vi= 524.4 mV (RMS).

a. RL=4Ω

(1) Po= 560 mW; Vi= 1.058 V (RMS).

(2) Po= 375 mW; Vi= 866 mV (RMS).

(3) Po= 190 mW; Vi= 616.4 mV (RMS).

b. RL=8Ω

Gv(cl) =6dB.

Fig 6. Total harmonic distortion-plus-noise as a function of frequency; VDD = 3.6 V

001aah490

f (Hz)

10 105

104

102103

10−1

10−2

10−3

THD+N

(%) (1)

(2)

(3)

001aah491

f (Hz)

10 105

104

102103

10−1

10−2

10−3

THD+N

(%) (1)

(2)

(3)

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