Panasonic Transistors 2SC3931G Bedienungsanleitung
1
Transistors
Publication date: April 2007 SJC00358AED
2SC3931G
Silicon NPN epitaxial planar type
For high-frequency amplification
■Features
•Optimum for RF amplification of FM/AM radios
•High transition frequency fT
•S-Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing
■Absolute Maximum Ratings Ta=25°C
Parameter Symbol Rating Unit
Collector-base voltage (Emitter open) VCBO 30 V
Collector-emitter voltage (Base open) VCEO 20 V
Emitter-base voltage (Collector open) VEBO 3V
Collector current IC15 mA
Collector power dissipation PC150 mW
Junction temperature Tj150 °C
Storage temperature Tstg −55 to +150 °C
Parameter Symbol Conditions Min Typ Max Unit
Collector-base voltage (Emitter open) VCBO IC=10 µA, IE=030V
Emitter-base voltage (Collector open) VEBO IE=10 µA, IC=03V
Base-emitter voltage VBE VCB =6 V, IE=−1 mA 720 mV
Forward current transfer ratio *hFE VCB =6 V, IE=−1 mA 65 260
Transition frequency fTVCB =6 V, IE=−1 mA, f =200 MHz 450 650 MHz
Common-emitter reverse transfer Cre VCB =6 V, IE=−1 mA, f =10.7 MHz 0.8 1.0 pF
capacitance
Power gain GPVCB =6 V, IE=−1 mA, f =100 MHz 24 dB
Noise figure NF VCB =6 V, IE=−1 mA, f =100 MHz 3.3 dB
■Electrical Characteristics Ta=25°C ±3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank C D
hFE 65 to 160 100 to 260
This product complies with the RoHS Directive (EU 2002/95/EC).
■Package
•Code
SMini3-F2
•Marking Symbol: U
•Pin Name
1. Base
2. Emitter
3. Collector
2SC3931G
2SJC00358AED
This product complies with the RoHS Directive (EU 2002/95/EC).
ICVBE VCE(sat) IChFE IC
PCTaICVCE ICIB
fTIEZrb IECre VCE
0 16040 12080
0
200
160
120
80
40
Collector power dissipation PC(mW)
Ambient temperature Ta(°C)
018612
0
12
10
8
6
4
2
T
a
=25°C
I
B
=100 µA
80 µA
60 µA
40 µA
20 µA
Collector current IC(mA)
Collector-emitter voltage VCE (V)
0 18060 120
0
12
10
8
6
4
2
VCE =6 V
Ta=25°C
Base current I
B
(µA)
Collector current I
C
(mA)
0 2.01.60.4 1.20.8
0
30
25
20
15
10
5
V
CE
=6 V
T
a
=75°C−25°C
25°C
Base-emitter voltage V
BE
(V)
Collector current I
C
(mA)
0.1 1 10 100
0.01
0.1
1
10
100 IC/ IB=10
Ta=75°C
25°C
−25°C
Collector-emitter saturation voltage VCE(sat) (V)
Collector current IC(mA)
0.1 1 10 100
0
360
300
240
180
120
60
VCE =6 V
Ta=75°C
25°C
−25°C
Forward current transfer ratio hFE
Collector current IC(mA)
−0.1 −1−10 −100
0
1 200
1 000
800
600
400
200
V
CB
=6 V
T
a
=25°C
Transition frequency f
T
(MHz)
Emitter current I
E
(mA)
−0.1 −1−10
0
120
100
80
60
40
20
V
CB
=6 V
f =2 MHz
T
a
=25°C
Reverse transfer impedance Z
rb
(Ω)
Emitter current I
E
(mA)
0.1 1 10 100
0
2.4
2.0
1.6
1.2
0.8
0.4
I
C
=1 mA
f =10.7 MHz
T
a
=25°C
Collector-emitter voltage VCE (V)
Common-emitter reverse transfer capacitance Cre (pF)
2SC3931G
3
SJC00358AED
This product complies with the RoHS Directive (EU 2002/95/EC).
Cob VCB GPIENF IE
bie gie bre gre bfe gfe
boe goe
030252051510
0
1.2
1.0
0.8
0.6
0.4
0.2
I
E
=0
f =1 MHz
T
a
=25°C
Collector-base voltage V
CB
(V)
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
−0.1 −1−10 −100
0
40
30
10
20
f =100 MHz
R
g
=50 Ω
T
a
=25°C
V
CE
=10 V
6 V
Power gain G
P
(dB)
Emitter current I
E
(mA)
−0.1 −1−10 −100
0
12
10
8
6
4
2
f =100 MHz
R
g
=50 kΩ
T
a
=25°C
V
CE
=6 V, 10 V
Noise figure NF (dB)
Emitter current IE(mA)
015936 12
0
20
16
12
8
4
y
ie
=g
ie
+jb
ie
V
CE
=10 V
100
100
−1 mA
−2 mA
−4 mA
−7 mA
I
E
=−0.5 mA
150
f =10.7 MHz
58
58
25
25
Input conductance g
ie
(mS)
Input susceptance b
ie
(mS)
−0.5 0−0.1−0.4 −0.2−0.3
−6
0
−1
−2
−3
−4
−5
yre =gre +jbre
VCE =10 V
f =150 MHz
IE=−7 mA
−4 mA
−1 mA
25
58
100
10.7
Reverse transfer conductance g
re
(mS)
Reverse transfer susceptance bre (mS)
0 1008020 6040
−120
0
−20
−40
−60
−80
−100
yfe =gfe +jbfe
VCE =10 V
f =150 MHz
10.7
−0.4 mA
−1 mA
−2 mA
−4 mA
IE=−7 mA 100
100
100
150
150
58
58
Forward transfer conductance g
fe
(mS)
Forward transfer susceptance bfe (mS)
0 0.50.40.1 0.30.2
0
1.2
1.0
0.8
0.6
0.4
0.2
yoe =goe +jboe
VCE =10 V
f =10.7 MHz
IE=−0.5 mA
−2 mA
−4 mA
−7 mA
−1 mA
58
25
100
150
Output conductance g
oe
(mS)
Output susceptance b
oe
(mS)
This product complies with the RoHS Directive (EU 2002/95/EC).
SMini3-F2 Unit: mm
0.30 +0.05
−0.02
0.13 +0.05
−0.02
2.00 ±0.20
(0.89)
0.90 ±0.10
(0.65)(0.65)
1.30 ±0.10
1.25 ±0.10
2.10 ±0.10
0.425 ±0.050
(0.49)
0 to 0.10
(5°)
(5°)
3
12
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2)The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.
(3)The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
–Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
–Any applications other than the standard applications intended.
(4)The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5)When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6)Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7)This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
Electric Industrial Co., Ltd.
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